• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Korean Journal of Food Science and Technology
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• v.25 no.5
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• pp.582-588
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• 1993

In order to investigate the effects of food materials toward the growth of Bifidobacterium spp. and Clostridium perfringens which have great influences on the intestinal physiology of human, 162 kinds of foodstuffs and foods were collected. Among their extracts, 31 samples showed the inhibitory effects against the growth of B. bifidum and C. perfringens by agar diffusion method. Especially, the methanol extracts of Caltha palustris, Deonjang, onion, mustard and potato inhibited the growth of C. perfringens, while they did not remarkably inhibit other intestinal bacteria including Bifidobacterium spp. By the cultivation of faecal inoculum in the 1 %(v/v) extract broths of Caltha palustris, onion and mustard, population of Bifidobacterium spp. increased by 10 order and that of C. perfringens decreased. ${\beta}$-glucuronidase activities and indole amounts in the cultures of onion and mustard extracts were lower than those of the control culture and ${\beta}-glucosidase$ activities were not detected in the cultures of onion and Doenjang extracts.

• Horticultural Science & Technology
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• v.29 no.2
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• pp.95-101
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• 2011

The influence of physicochemical properties of root substrates on the growth of mother plants and occurrence of daughter plants in 'Seolhyang' strawberry propagation were investigated through plastic bag cultivation. Six different formulations of root substrates were coir dust + perlite (5:5, A), coir dust + perlite (6:4, B), coir dust + perlite (7:3, C), coir dust + coconut chip (7:3, D), coir dust + coconut chip (6:4, E), and peatmoss + vermiculite (5:5, v/v; F). The total porosities (TP) and container capacities (CC) of all root substrates were higher than 85% and 55%, respectively, indicating that all substrates were in the acceptable range. But the TP and CC of F substrate were 91.5% and 60%, respectively, which were the highest among the root substrates tested. In the soil chemical properties analyzed before planting and after harvesting of 'Seolhyang' strawberry mother plants, the root substrates of A, B, C, and F had higher electrical conductivity and $NO_3$-N concentrations than those of D and F. The root substrates of A, B, C, and F had heavier runner fresh and dry weights, longer runner lengths, and more daughter plant occurrence than those of D and F. The treatment F had higher tissue N content than any other treatments at 120 days after the transplanting of 'Seolhyang' strawberry and statistical differences were not observed among remained 5 substrates. The treatment of F also had the higher tissue contents of other nutrients except N analyzed at 120 days after transplanting. These results indicated that soil chemical properties rather than physical properties severely influenced the growth of runners and occurrence of daughter plants.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1543-1551
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• 2011

Dithering scheme has been widely used to improve the resolution of DCO(Digitally Controlled Oscillator) in conventional ADPLLs(All Digital Phase Locked Loop). In this paper a new resolution improvement scheme is proposed where a simple DAC(Digital-to-Analog Converter) is employed to overcome the problems of dithering scheme. The frequencies are controled by varactors in coarse, fine, and DAC bank. The DAC bank consists of an inversion mode NMOS varactor. The other varactor banks consist of PMOS varactors. Each varactor bank is controlled by 8bit digital signal. The proposed DCO has been designed in a $0.13{\mu}m$ CMOS process. Measurement results shows that the designed DCO oscillates in 2.8GHz~3.5GHz and has a frequency tuning range of 660MHz and a resolution of 73Hz at 2.8GHz band. The designed DCO exhibits a phase noise of -119dBc/Hz at lMHz frequency offset. The DCO core consumes 4.2mA from l.2V supply. The chip area is $1.3mm{\times}1.3mm$ including pads.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.343-346
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• 2003

Photoluminescence(PL), photostimulated luminescence(PSL) and thermoluminescence(TL) in $SrC1_2$:$Eu^{2+}$ , $Na^{+}$ phosphor powder were measured, and the activation energies(trap depth) of traps associated with TL and PSL were investigated. The PL and PSL in the studied sample is due to the $4f^{6}$ 5d\longrightarrow$4f^{7}$transition of $Eu^{ 2+}$. TL glow curve is single peak, and its peak temperature is about 377.2 K. The PL, PSL and TL emission spectra of the phosphors are located in the range of 380∼440 nm, peaking at 408 nm. The activation energy of the PSL trapping center is 0.78 eV and that of the TL trapping center is 0.79 eV. We, thus, suggest that the trapping centers giving rise to the PSL are identical to those giving rise to the TL.

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.251-255
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• 2001

The structure of the lithium zinc borate LiZnBO3 has been established by single-crystal X-ray diffraction methods. It crystallizes in the triclinic space group P1(Z=2), with unit-cell parameters - $a=5.0915(9)\AA$, $b=5.059(1)\AA$, $c=6.156(1)\AA$, $V=120.6(1)\AA3$ , $\alpha=65.81(1)^{\circ}$, $\beta=65.56(1)^{\circ}$ and $\gamma=59.77(1)^{\circ}$. The structure was determined from 704 unique reflections and refined to the final residuals R=0.039 and wR=0.056. It is characterized by an association of BO3 triangles and LiO4 and ZnO4 tetrahedra. The Li and Zn atoms are disordered around the average positions between Li1 and Li2 atoms or between Zn1 and Zn2 atoms. The disorder can be described by four half-occupied positions about Li1, Li2, Zn1 and Zn2 atoms.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Nutritional Sciences
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• v.9 no.1
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• pp.48-54
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• 2006

Methods have been developed to evaluate the total antioxidant capacity of foods and plasma but limitations are associated with their ability to determine precisely the contribution of lipophilic antioxidants in a lipid milieu as well as interactions among them Thus, we modified the Oxygen Radical Absorbance Capacity (ORAC) assay to determine the peroxyradical scavenging ability of both hydrophilic and lipophilic compartments in plasma The hydrophilic ORAC assay was performed in a phosphate buffer system utilizing 2,2'-azobis (2-amidinopropane) dihydrochloride as a peroxyradical generator and fluorescein as the target The lipophilic ORAC assay was carried out in a dimethylsulfoxide :butyronitrile (DMSO/BN, 9:1 v/v) system using 2,2'-azobis (2,4-dimethyl valeronitrile) as a peroxyradical generator and BODIPY C11 581/591 as the target Analyses were conducted in bovine serum supplemented with water - and lipid - soluble antioxidants and in human plasma. Albumin (0.5$\sim$5 g/dL) and uric acid (0.1$\sim$0.5 $\mu$mol/L) increased hydrophilic ORAC values in a dose-dependent fashion ($R^{2}$=0.97 and 0.98, respectively) but had no impact on lipophilic ORAC values. $\alpha$-Tocopherol (15$\sim$200 $\mu$mol/L) increased lipophilic ORAC values in a dose-dependent fashion ($R^{2}$=0.94); neither $\alpha$-tocopherol nor $\beta$-carotene had an impact on hydrophilic ORAC values. However, addition of $\beta$-carotene at physiological concentration (0.23$\sim$1.86 $\mu$mol/L), either alone or in combination with other carotenoids, had no significant impact on lipophilic ORAC values. Thus, while assays of 'total antioxidant capacity' in biological matrices would be a useful research and clinical tool, existing methods are limited by the lack of complete responsiveness to the full range of dietary antioxidants.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.