• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.151-156
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• 2013

As the cathode material for li-ion battery, $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ were synthesized by supercritical hydrothermal method and calcined $850^{\circ}C$ and $900^{\circ}C$ for 10hrs in air. The effect of temperature in the heat treatment on the powder and its performance were studied of xray diffraction pattern, SEM-image, physical properties and electrochemical behaviors. As a result, calcined at $900^{\circ}C$ material particle size more increase than calcined at $850^{\circ}C$ material, especially shows excellent electrochemical performance with initial reversible specific capacity of 163.84 mAh/g (0.1C/2.0-4.3V), 186.87 mAh/g (0.1C/2.0-4.5V) and good capacity retention of 91.49% (0.2C/2.0-4.3V) and 90.36% (0.2C/2.0-4.5V) after 50th charge/discharge cycle.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.156-160
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• 2006

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the A12O3 layer are counterclockwise in the voltage sweeps, which indicates tile presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In the Ge-NC-embedded MOS capacitor without Al2O3 layer, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al2O3 layer. It is suggested that the characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

• Applied Chemistry for Engineering
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• v.7 no.2
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• pp.362-370
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• 1996

The performance of The performance of $Li/V_6O_{13}$ cell and the electrochemical properties of polymer electrolyte based on poly(acrylonitrile)[PAN] was investigated. The ionic conductivity of polymer electrolyte showed $2.3{\times}10^{-3}S/cm$ and the compatibility with lithium electrode was excellent. Also, it showed the electrochemical stability up to 4.3V(vs. $Li^+/Li$). The cell reaction of $Li/V_6O_{13}$ was dominated by the interfacial resistance between $V_6O_{13}$ electrode and polymer electrolyte. The diffusion coefficient of lithium ion within $V_6O_{13}$ was $2.7{\times}10^{-9}{\sim}4.2{\times}10^{-8}cm^2/sec$. The utilization of $V_6O_{13}$ active material was 95% at C/8($50{\mu}A/cm^2$) and 82% at C/4($100{\mu}A/cm^2$), respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• BMB Reports
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• v.54 no.8
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• pp.425-430
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• 2021

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) induces coronavirus disease 2019 (COVID-19) and may increase the risk of adverse outcomes in lung cancer patients. In this study, we investigated the expression and function of mucin 1 (MUC1) after SARS-CoV-2 infection in the lung epithelial cancer cell line Calu-3. MUC1 is a major constituent of the mucus layer in the respiratory tract and contributes to pathogen defense. SARS-CoV-2 infection induced MUC1 C-terminal subunit (MUC1-C) expression in a STAT3 activation-dependent manner. Inhibition of MUC1-C signaling increased apoptosis-related protein levels and reduced proliferation-related protein levels; however, SARS-CoV-2 replication was not affected. Together, these results suggest that increased MUC1-C expression in response to SARS-CoV-2 infection may trigger the growth of lung cancer cells, and COVID-19 may be a risk factor for lung cancer patients.

• Journal of KIISE
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• v.42 no.2
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• pp.213-219
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• 2015

Simulation is used these days to verify the hypothesis or the new technology. In particular, National Defense Modeling & Simulation (M&S) is used to predict wartime situation and conduct the military training. National Defense M&S can be divided into three parts, live simulation, virtual simulation, and constructive simulation. Live simulation is based on the real environment, which allows more realistic sumulation; however, it has decreased budget efficiency, but reduced depictions of reality. In contrast, virtual and constructive simulations which are based on the virtual environment, have increased budget efficiency, but reduced depictions of reality. Thus, if the three parts of the M&S are combined to make the L-V-C combined environment, the disadvantages of each simulation can be complemented to increases the quality of the simulation. In this paper, a method of interworking heterogeneous simulation middeware for L-V-C combined environment is proposed, and the test results of interworking between Data Distribution Service (DDS) and High Level Architecture (HLA) are shown.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.