• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.89-92
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• 2001

In this paper, a simple low-power CMOS current reference circuit is proposed. The reference circuit includes parasitic pnp BJTs and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a base-to-emitter voltage. The designed circuit has been simulated using a 0.25${\mu}{\textrm}{m}$ n-well CMOS process parameters. The simulation results show that the reference current is 34.96$mutextrm{A}$$\pm$0.04$mutextrm{A}$ in the temperature range of -2$0^{\circ}C$ to 12$0^{\circ}C$ The reference current varies less than 0.6% when the power supply voltage changes from 2.5V to 3.5V For $V_{DD=5V}$ and T=3$0^{\circ}C$ the power consumption is 520㎼ during normal operation but reduces to 0.l㎻ during power-down mode.

• Broadcasting and Media Magazine
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• v.26 no.2
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• pp.46-55
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• 2021

최근 디바이스와 5G 통신의 비약적인 발전을 통해 가상/증강 현실 분야, 자율 주행 등 3차원 그래픽스 기술에 대한 연구가 활발하게 진행되고 있으며, 3차원 정보를 면밀하게 표현할 수 있는 포인트 클라우드와 다시점 초실감 콘텐츠가 주목받고 있다. 이와 같은 콘텐츠는 전통적인 2D 비디오 대비 많은 데이터를 사용하고 있기에, 효율적 사용을 위해서는 압축이 필수적으로 요구된다. 이에 따라 국제표준화기구인 ISO/IEC 산하 Moving Picture Expert Group(MPEG)에서는 고밀도 포인트 클라우드 및 초다시점 실감형 콘텐츠에 대한 압축 방안으로 V-PCC(Video based Point Cloud Compression) 및 MIV(MPEG Immersive Video) 기술을 표준화 중에 있으며, 또한, 압축된 데이터를 효율적으로 저장, 전송하기 위한 방안으로 Carriage of Visual Volumetric Video Coding(V3C) 표준화가 진행중에 있다. 본 고에서는 MPEG에서 진행중인 V3C 표준 기술에 대하여 살펴보고자 한다.

• Journal of the Korean Chemical Society
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• v.13 no.2
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• pp.121-129
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• 1969

The apparent and partial molal volumes({\phi}\nu$and $V^{\circ}$) of a series of homologous n-alkylamine hydrochlorides $C_nH_{2n+1}NH_3^+Cl^-$, where n varies from zero to four, have been determined by means of a float method at 30$^{\circ}C$ to the fifth decimal place down to 0.01M in aqueous solutions. The experimental results indicate that the partial molal volumes of the salts are almost additive for successive homologues depending on the increment of molecular weight ($CH_2$). It has been observed that the concentration dependence of the ${\Phi}v$ are linear in general and limiting slopes are positive and relatively close to the theoretical values. Anionic partial molal volume of chlorides anion $V^{\circ}_{Cl^-}$ is found to be 18.6 ml $mole^{-1}$, which is in good agreement with the results of other workers. {\phi}\nu$ data also show that in solution the hydrophobic effect of ions are in competition with the charge effect, but the latter, that is, electrostriction seemed to be considerably predominant.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2459-2465
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• 2007

V2O5/TiO2-ZrO2 catalyst modified with V2O5 was prepared by adding Ti(OH)4-Zr(OH)4 powder into an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using XRD, DSC, solid-state 51V NMR, and FTIR. In the case of calcination temperature of 500 oC, for the catalysts containing low loading V2O5 below 25 wt % vanadium oxide was in a highly dispersed state, while for catalysts containing high loading V2O5 equal to or above 25 wt % vanadium oxide was well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2. The strong acid sites were formed through the bonding between dispersed V2O5 and TiO2-ZrO2. The larger the dispersed V2O5 amount, the higher both the acidity and catalytic activities for acid catalysis.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1355-1357
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• 1998

TFT의 게이트 절연막으로 사용되는 절연체는 우수한 절연특성과 낮은 계면포획전하밀도($D_{it}$)를 요구한다. 이에 본 연구에서는 우수한 절연특성을 가지며, 격자상수가 Si과 유사한 $CaF_2$의 증착 특성을 연구하였다. 진공증착법을 이용하여 p형 Si(100) 기판위에 $CaF_2$의 기판온도, 두께를 변화시켜 전기적, 구조적 특성을 평가하였다. 또한 Si 기판에 방향에 따른 박막의 특성을 조사하였다. 구조적 특성분석으로부터 Si(100) 기판의 경우 $CaF_2$는 (200)방향으로 주도적인 성장을 하였으며 기판온도를 상승시킴에 따라 (220)방향으로도 성장을 하는 것으로 나타났다. 열처리 전후의 구조적 특성은 SEM을 통해서 확인 할 수 있었다. 열처리 전후의 특성 변화로부터 저온($100^{\circ}C$이하)에서는 기판과의 성장방향과 동일하였으며 고온($200^{\circ}C$이상)에서는 기판방향과는 다른 방향 성장 결과를 얻었다. 전기적 특성평가를 위하여 C-V 특성을 평가하였다. C-V 특성으로부터 Si(100) 기판의 온도가 $100^{\circ}C$, $1455\AA$ 두께로 증착한$CaF_2$ 박막의 $D_{it}$는 $1.8{\times}10^{11}cm^{-1}eV^{-1}$로 낮은 값을 가지 고 있었으며 0.1MV/cm에서 누설전류밀도가 $10^{-8}A/cm^2$ 이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.452-460
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• 1992

Effects of the microalloyed elements, temperatures and cooling rates on the strength and toughness of the medium carbon microalloyed hot forging steels obtained by air cooling(A.C.) method and the low carbon microalloyed forging steels by direct quenching(D.Q.) method were investigated. Combined additions of V+Nb produced the optimum combination of strength and toughness with ferrite-pearlite structure of the medium carbon steel by the A.C. method. 831MPa in UTS and 52.1J in toughness were obtained for 0.40c+0.12V+0.07Nb. It was martensite structure for the low carbon steel by the D.Q. method. The highest UTS and toughness obtained by Mo additions were 855MPa and 108j by 0.12C+0.10V+0.03Nb+1.13Mo respectively. Especially, the toughness of the low carbon steel was twice better than that of the medium carbon steel. 110$0^{\circ}C$was more appropriate than 120$0^{\circ}C$ for the reheating and forging temperature and 1.$2^{\circ}C$ /s was the best cooling rate from the viewpoint of the strength and toughness. Multiple regression analysis was used to quantify the influence of the microalloyed elements, temperatures and cooling rates on the strength, toughness, austenite grain size, and the pearlite interlamellar spacing.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.256-259
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• 1999

The effects of Pr doping on structural and superconducting properties of (Pb$_{0.5}$V$_{0.5}$)Sr$_2$(Ca$_{1-x}$Pr$_x$)Cu$_2$O$_z$ have been studied. We have observed systematic variation of lattice parameters with increasing Pr content. A maximum Tc of about40 K has been observed in this system. The correlation between the crystal structure and superconductivity has been addressed.