• Korean Journal of Fisheries and Aquatic Sciences
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• v.53 no.5
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• pp.688-693
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• 2020

Vibrio vulnificus is a Gram-negative marine bacterium known to cause septicemia. This study was conducted to investigate the distribution of V. vulnificus along the coast of Gadeok Island in Korea and to determine the molecular characteristics of isolated strains sampled between March and November 2019 from seawater. The strains were mostly detected between July and September, when the average water temperature and average salinity were 22.2-26.2℃ and 14.2-29.9 psu, respectively. V. vulnificus was not detected in seawater below 15℃. In September, the highest population of V. vulnificus was observed at 2,100 MPN (most probable number)/100 mL, attributable to decreased salinity from heavy rains. In addition, the detection rate of V. vulnificus was higher at the sampling station near the Nakdong River. Virulence-related genes were also identified among the isolates, such as vvhA (97.1%), viuB (44.1%), and vcgC (57.4%). In particular, viuB and vcgC were only observed in V. vulnificus isolated from June to September, when the detection rate was high and water temperature was above 20℃, suggesting the role of seasonal characteristics.

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.10
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• pp.1341-1350
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• 2007

This study was designed to ultimately develop a highly efficient mass production technology of bacterial cellulose isolated from the citrus gel fermented by G. hansenii TL-2C. Pilot equipment made with FRP vessel length (665 mm) ${\times}$ width (375 mm) ${\times}$ height (210 mm) was developed for mass production of the citrus gel. To develop the optimal conditions for mass production of citrus gel, comprised of citrus juice (6,000 mL) diluted 100 times, containing 5% seed bacteria, 10% sucrose, and 1% ethanol, citrus juice was fermented at $30^{\circ}C$ for 14 days, and gel productivity in pilot system was examined. BC was isolated and purified from the citrus gel, and their chemical composition and physicochemical properties were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.194-194
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• 2013

본 연구에서는 a-IGZO 활성층에 다른 dose량의 수소 이온을 조사하여 박막 트랜지스터 소자의 효과를 알아보고, 수소 이온 조사 후, 이온 조사에 따른 불안정한 소자 특성을 안정화시킬 목적으로 후 열처리에 따른 소자 특성을 알아보았다. a-IGZO 활성층에 수소이온을 110keV의 에너지로 가속하여, 수소 이온 조사량을 $1{\times}10^{14}\;ion/cm^2$, $1{\times}10^{15}\;ion/cm^2$, $1{\times}10^{16}\;ion/cm^2$로 조절하였고, 후 열처리 공정은 a-IGZO 활성층에 $1{\times}10^{16}\;ion/cm^2$ 이온조사 후, 대기 분위기로 $150^{\circ}C$, $250^{\circ}C$, $350^{\circ}C$ 각각 1시간 동안 열처리를 진행하였다. Spectroscopy Ellipsometry (SE)로 측정된 3eV이상의 광학적 밴드 갭은 기존에 보고 되었던 비정질 산화물 반도체와도 유사한 밴드 갭을 가지고 있음을 확인하였다. IGZO 박막을 활성층으로 사용하여 수소 이온 조사 공정 후 제작한 박막 트랜지스터는 3.89 $cm^2/Vs$의 전계효과이동도와 0.59V/decade의 문턱전압 이하 기울기를 보았다. 수소 이온 조사 공정을 통한 IGZO 박막 트랜지스터의 output curve가 다소 불안정함을 보였으나, $1{\times}10^{16}\;ion/cm^2$ 이온조사 후, 대기 분위기로 $150^{\circ}C$, $250^{\circ}C$, $350^{\circ}C$ 각각 1시간동안 열처리를 진행한 박막 트랜지스터의 특성은 소자의 불안정성을 보완해줄뿐만 아니라 $350^{\circ}C$ 열처리에서는 16.9 $cm^2/Vs$의 전계효과이동도와 0.33V/decade의 문턱전압 이하 기울기와 같이 더 향상된 박막 트랜지스터의 전기적 특성 결과를 관측하였다. 기존의 연구 되어진 a-IGZO 활성층에 수소이온조사와 후 열처리 공정에 따라 광학적 밴드 갭 에너지 준위의 변화와 박막 및 박막 트랜지스터 특성을 변화시킨다는 결과를 도출하였다.

• Herbal Formula Science
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• v.12 no.1
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• pp.195-208
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• 2004

Objective: This study was conducted to investigate the effects of Aconiti Tuber on the plasma IL-6 and $TNF-{\alpha}$ level in mice stimulated by intracerebroventricular(I.C.V.) Injection of Lipopolysaccharide(LPS). Method: 6 mice were assigned to each of the normal group, the control group, and the experimental group. In the normal group only saline was administered intragastrically, and in the control group LPS was injected intracerebro-ventricularly 1 hr after intragastric administration of saline. In the experimental groups (Aconiti Tuber 0.5g/kg, Aconiti Tuber 1.0g/kg, Aconiti Tuber 3.0g/kg) each sample was administered intragastrically to mice 1 hr prior to the stimulation by LPS I.C.V. Injection. To measure the plasma IL-6 and $TNF-{\alpha}$ level of mice, their blood samples were collected from retro-orbital plexus, immediately centrifuged at $4^{\circ}C$, and plasma was removed and stored frozen at $-83^{\circ}C$ for later determination of plasma IL-6 and $TNF-{\alpha}$. Result : 1. LPS I.C.V. Injection increased plasma IL-6 level significantly in a dose-dependent manner compared with normal group(P<0.01). The plasma IL-6 concentration reached a significant maximal level about 1 hr after LPS I.C.V. Injection(P<0.001). LPS I.C.V. Injection increased plasma $TNF-{\alpha}$ level significantly in a dose-dependent manner(P<0.05). The plasma $TNF-{\alpha}$ concentration reached a significant maximal level about 1 hr after LPS I.C.V. Injection(P<0.001). 2. Sample A group to which Aconiti Tuber(0.5g/kg) was administered intragastrically 1 hr prior to the stimulation by LPS I.C.V. Injection showed insignificant lower plasma IL-6 level in 1 hr than control group(P<0.0635), and sample B group (Aconiti Tuber 1.0g/kg) showed significant lower plasma IL-6 level in 1 hr than control group(P〈0.05), and sample C group (Aconiti Tuber 3.0g/kg) showed significant lower IL-6 plasma level in 1 hr than control group(P<0.01). 3. sample A group to which Aconiti Tuber(0.5g/kg) was administered intragastrically 1 hr prior to the stimulation by LPS I.C.V. Injection showed insignificant lower plasma $TNF-{\alpha}$ level in 1 hr than control group(P>0.05), and Both sample B(1.0g/kg) and sample C(3.0g/kg) groups showed significant lower $TNF-{\alpha}$ plasma level in 1 hr than control group(P<0.01). These data revealed that Aconiti Tuber might have the anti inflammatory effect by reducing the plasma IL-6 and $TNF-{\alpha}$ level in a dose dependent manner in mice LPS I.C.V. Injection.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.109-117
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• 1995

고에너지 이온주입시 격자결함의 생성 및 열처리 거동이 double crystal X-ray와 단면 TEM을 사용하여 연구되었다. 3MeV P+ 이온주입한 실리콘의 DCXRD 분석 결과조사량 증가에 따라 모재 내의 변형량은 증가하였다. HRTEM 분석 결과 고에너지 이온주입시 결함은 표면 부근에 희박하고 Rp 부근에 집중되어 있었다. 또한 이온주입 상태의 결함층은 dark band의 형태로 존재하였으며 열처리시 이차결함은 이곳으로부터 생성됨이 관찰되었다. 3MeV P+,$1X1015extrm{cm}^2$의 조건으로 이온주입된 실리콘 시편의 열처리에 따른 X-ray rocking curve 분석을 통하여 열처리 온도가 $550^{\circ}C$에서 $700^{\circ}C$로 증가함에 따라 모재 내부의 최대 변형량이 7X10-4에서 2.9X10-4으로 감소함이 관찰되었다. 특히 $550^{\circ}C$ 열처리한 시편의 경우 표면으로부터$-1.5mu$m 영역에 작은 변형층이 넓게 잔존하였으며 열처리온도를 $700^{\circ}C$로 증가한 경우 제거되었다. 이온주입시 생성된 일차결함들은 $700^{\circ}C$ 열처리시 $60^{\circ}$ 전위와 <112> 막대 모양 결함, $1000^{\circ}C$ 열처리시 <110>방향의 전위루프로 열처리 조건에 따라 여러 가지 모양의 이차결함으로 변화하였다. 고에너지 이온주입에 의해 발생한 이차결함은 고온에서도 안정하여 고온 열처리에 의한 제거가 용이하지 않았다.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.41-46
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• 2002

본 논문은 냉, 난방 디지털 온도 조절계(SPC 50)의 Etl의 편차 정 동작에 관한 구현장치 제작과 비례 미.적분기가 At 및 비 At기능에서 설정온도를 $100^{\circ}C$를 유지하는데 기인된 전압전류 및 전력데이터 획득의 요인과 비례미적분 정수 및 노 개선점을 연구하였다. 설정온도를 유지하는 온도변화는 At기능에서 $96.7^{\circ}C\sim102^{\circ}C$ 이며, 비At 기능에서는 $97.6^{\circ}C\sim100.2^{\circ}C$이었다. 온도유지 전압변동은 At기능에서 2V~217V이며, 비 At기능에서 20V~217V 이었다. At와 비 At 기능에서 설정온도 $100^{\circ}C$을 유지하는데 온도를 냉각시키는 환풍기가 온. 오프 되는 시간차는 20초 정도 발생하였다. 온도차 및 전압차는 두 기능간에 비례 미. 적분값 설정이 자동 및 수동이냐에 따라서 차이를 보여주었다. 두 기능에서 설정된 온도값 유지에 따른 전압전류의 승압과 하강의 변동된 변환 데이터는 설정된 온도가 성취되어지는 시간차 및 설정값 유지의 특성을 요인으로 한 PID값과 노의 개선점에 길잡이가 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of Surface Science and Engineering
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• v.39 no.2
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• pp.49-56
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• 2006

In this study, the movable flame hardening process of 12Cr steel for a uniform hardness and desirable residual stress have been investigated. For this, the temperature cycles have been controlled accurately as a function of the three processing variables, the flame intensity $I_f$, the scanning velocity $V_s$, and the initial flame holding time $t_h$, where the standard surface temperature $T_{s,\;max}$, was maintained at $960^{\circ}C$. The optimized conditions were $V_s=0.68mn/s\;and\;t_h=67sec$ for the $C_3H_8:O_2\;=\;5:20l/min,\;V_s=0.80mm/s$ and $t_h=56sec$ for the $C_3H_8:O_2=6:24l/min,\;V_s=1.01mm/s\;and\;t_h=48sec$ for the $C_3H_8:O_2=7:28l/min,\;and\;V_s=1.15mm/s$ and $t_h=39sec$ for the $C_3H_8:O_2$=8:32 l/min. The optimally flame-hardened surface exhibited uniform distributions of the hardness and residual compressive stress over the treated area with moderate levels of $470{\sim}490HV_{0.2}$in hardness and $-300{\sim}-450MPa$ in residual stress, which were acceptable on the basis of the acceptance criteria of Siemens AG-KWU and GE Power Generation Engineering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1096-1099
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• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min