• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.10
• /
• pp.1-8
• /
• 2002

C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

• Journal of Powder Materials
• /
• v.8 no.2
• /
• pp.124-130
• /
• 2001

A centrifugally atomized 2024A1/SiC/sub p/ composites were extruded to study effect of clusters on mechanical properties, and a model was proposed that the strength of MMCs would be estimated from the load transfer model approach that taken into consideration of the clusters. This model has been successfully utilized to predict the strength and fracture toughness of MMCs. The experimental and calculated results show coincidence and that the fracture toughness decreases with increasing the volume fraction of particles. On the basis of experimental observations, we suggest that the strength and fracture toughness of particle reinforced MMCs may be calculated from; σ/sub y/=σ/sub m/V/sub m/+σ/sub r/(V/sub r/-V/sub c)-σ/sub r/V/sub c/, K/sub IQ/=σ/sub Y/((3πt)((r/sub r//V/sub r/)(r/sub c//V/sub c/))/sup 1/2/)/sup 1/2/, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.640-644
• /
• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• Korean Journal of Food Science and Technology
• /
• v.26 no.3
• /
• pp.204-212
• /
• 1994

To estimate the possibility of wine-making with Korean dried persimmon, its homogenized and filtered solution was fermented at $15^{\circ}C$ and $25^{\circ}C$ for 12 weeks with Saccharomyces cerevisiae (Japan Alcoholic Beverage Association N0.7). Sugars of dried persimmon were mainly composed of 27.02% of glucose, 19.81% of fructose and 5.12% of mannose. In the fermentation at $25^{\circ}C$, glucose was almost completely consumed in 8 days, but fructose and mannose were consumed up to 64% and 74%, respectively, in the same period and were not utilized any more afterwards. In the fermentation at $15^{\circ}C$, 75% of glucose, 20% of fructose and 49% of mannose were consumed in 8 days and these sugars were continuously utilized for 12 weeks. Organic acids in the homogenized and filtered solution were levulinic acid (148.6 mg%), 4-methylvaleric acid (73.5 mg%), oxalic acid (28.7 mg%), acetic acid (8.5 mg%), N-butyric acid (8.4 mg%) and succinic acid (6.7 mg%). Irrespective of fermentation temperature, levulinic acid rapidly reduced according to progression of fermentation. Oxalic acid, N-butyric acid and succinic acid decreased at 2nd day of fermentation, and then increased at 4th and 6th days and subsequently decreased again under the levels of the solution. Acetic acid and 4-methylvaleric acid increased with the proceeding of fermentation and at 12th week of fermentation these contents were more than those of the solution. The contents of total free amino acid significantly reduced at 2th day of fermentation and then increased to the level of the solution at 12th week irrespective of fermentation temperature. Ethanol content rapidly increased to the levels of 5.3(v/v) at $15^{\circ}C$ and 9.4%(v/v) at $25^{\circ}C$ to 8th day after fermentation, but at 12th week its content was 14.5%(v/v) at $15^{\circ}C$ and 9.4%(v/v) at $25^{\circ}C$. The higher alcohots identified were 2-methyl-l-propanol, 3-methyl-ibutanol, 2-methyl-l-butanol and 2-methyl-2-propanol and the range of those contents was from 0.001% (v/v) to 0.06%(v/v). The color of the wine fermented at $15^{\circ}C$ was slightly superior but flavor and taste were slightly superior in the wine fermented at $25^{\circ}C$.

• Electrical & Electronic Materials
• /
• v.7 no.5
• /
• pp.383-388
• /
• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Journal of the Korean Electrochemical Society
• /
• v.15 no.1
• /
• pp.27-34
• /
• 2012

$Li_3V_2(PO_4)_3$/carbon composite materials are synthesized from a sucrose-containing precursor. Amorphous $Li_3V_2(PO_4)_3/C$ (a-LVP/C) and crystalline $Li_3V_2(PO_4)_3/C$ (c-LVP/C) are obtained by calcining at $600^{\circ}C$ and $800^{\circ}C$, respectrively, and electrochemical performance as the negative electrode for lithium secondary batteries is compared for two samples. The a-LVP electrode shows much larger reversible capacity than c-LVP, which is ascribed to the spatial $Li^+$ channels and flexible structure of amorphous material. In addition, this electrode shows an excellent rate capability, which can be accounted for by the facilitated $Li^+$ diffusion through the defect sites. The sloping voltage profile is another advantageous feature for easy SOC (state of charge) estimation.

• KSBB Journal
• /
• v.9 no.4
• /
• pp.436-442
• /
• 1994

The production of itaconic acid by Aspergillus terreus NRRL 1960 was studied. The optimal culture conditional such as pH, inoculum size and medium composition were established. Maximum production of itaconic acid, $19.18g/\ell$, was obtained when the cultivation was carried out at $37^{\circ}C$ and pH 2.5 for 7days, with medium containing 5%(w/v) glucose, 0.5%(w/v) NH4Cl, 0.2%(w/v) yeast extract 0.1%(w/v) CaC12, 0.1%(w/v) MgSO4 and 0.2%(w/v) NaCl. A proper medium for inoculum culture was found to be 2%(w/v) malt extract. The batch production of itaconic acid with free cells in a stirredtank reactor was not efficient compared to the shake-flask culture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.236-236
• /
• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.447-455
• /
• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.21-26
• /
• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.