• Title/Summary/Keyword: V2C

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Isolation and Characterization of a Bacterium with a Fibrinolytic Activity (Fibrin 용해 균주의 분리 및 특성)

  • 정용준
    • KSBB Journal
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    • v.14 no.1
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    • pp.103-108
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    • 1999
  • A bacterium having strong fibrinolytic activity, S7-16 strain, was isolated from soil. The isolated bacterium was identified and named as Bacillus sp. S7-16. The optimal composition of the medium for the production of fibrinolytic enzyme by Bacillus sp. S7-16 was 0.5%(w/v) polypeptone, 0.5%(w/v) yeast extract, 0.3%(w/v) NaCl, 0.1% (w/v) $KH_2PO_4,\;0.3%(w/v)\;K_2PHO_4,\;and\;0.01%(w/v)\;MgSO_4{\cdot}7H_2O$. The optimal temperature and initial pH of the medium for the production of the enzyme were $35^{\circ}C$ and 7.0, respectively. The maximum production of the fibrinolytic enzyme was obtained after 24 hours of the incubation. Under the above conditions, the culture supernatant had strong fibrinolytic activity. Within pH4~11, the crude fibrinolytic enzyme was stable. The enzyme was stable up to $50^{\circ}C$. The optimum pH and temperature for the enzyme activity were around 7.5 and $40^{\circ}C$, respectively.

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Effect of the fixed oxide charge on the metal-oxide-silicon-on-insulator structures (metal-oxide-silicon-on-insulator 구조에서 고정 산화막 전하가 미치는 영향)

  • Jo, Yeong-Deuk;Kim, Ji-Hong;Cho, Dae-Hyung;Moon, Byung-Moo;Koh, Jung-Hyuk;Ha, Jae-Geun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.83-83
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    • 2008
  • Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

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Analysis of Contents and Deviations of Chemical Constituents of flue-cured leaf Tobacco from 1997 to 2001 Crop Years (연산별 황색종 가공엽의 화학성분 함량 및 편차 분석)

  • 김상범;정기택;조수헌;김용규
    • Journal of the Korean Society of Tobacco Science
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    • v.25 no.1
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    • pp.20-26
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    • 2003
  • To investigate the effects of reduction of leaf processing factories on the uniformity of processed leaf quality, the contents and their C.V.(Coefficient of Variation) of chemical constituents of flue-cured leaf tobacco produced from 1997 to 2001 and processed at various factories were analysed. The average leaf chemical contents of 12 grades for 5 years ranged as follows ; nicotine 2.00∼0.85%. total sugar 10.7∼16.9%, total nitrogen 2.36∼2.78%, crude ash 14.6∼15.6% and chlorine 0.50∼0.75%. The variations of chemical contents among crop years was higher in total sugar content while lower in crude ash content. The C.V. of chemical content in same grade leaves was higher in chlorine content while lower in total nitrogen and crude ash contents, and the ratio of C.V. among processing factories/C.V. in total population was higher in total sugar content while lower in crude ash content. When the leaves were processed at one factory, the deviations of chemical contents reduced considerably. Particularly, the decreasing effect of deviation was higher in total sugar content.

A study on the characteristics and crystal growth of GaSb (GaSb결정 성장과 특성에 관한 연구)

  • 이재구;오장섭;정성훈;송복식;문동찬;김선태
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.885-890
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    • 1996
  • Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

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Analysis of a.c. Characteristics in ZnO-Bi2O3Cr2O3 Varistor using Dielectric Functions (유전함수를 이용한 ZnO-Bi2O3Cr2O3 바리스터의 a.c. 특성 분석)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.368-373
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    • 2010
  • In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

$^{13}C$ NMR Studies of the Chelate Ring Opening-Closing Process in (Nitrilotriacetato)vanadate(V) dioxovandate(V) Ion

  • Lee, Man-Ho;Schaumburg, Kjeld
    • Bulletin of the Korean Chemical Society
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    • v.11 no.5
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    • pp.399-402
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    • 1990
  • Activation parameters of the exchange between two types of glycinate groups in (nitrilotriacetato)dioxovanadate(V) ion, $[VO_2(NTA)]^{2-}$, have been determined as the results of $^{13}C$ NMR measurements over a range of temperatures between 277 and 306$^{\circ}K$. The exchange mechanism is proposed on the basis of the chelate ring opening-closing process, assuming rupture of the metal-oxygen (glycinate) bond trans to V = O bond to give a five-coordinated intermediate.

Change of Refractive Index and Residual Stresses of Ta2O5 Thin Film Prepared by Dual Ion Beam Sputtering Deposition as the Substrate Temperature and Assist ion Beam Energy (이중 이온빔으로 제작한 Ta2O5 박막의 기판 온도 및 보조 이온빔 에너지에 따른 굴절률과 판류응력의 변화)

  • Yeon, Seok-Gyu;Kim, Yong-Tak;Kim, Hwek-Yung;Kim, Myoung-Jin;Lee, Hyung-Man;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.42 no.1
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    • pp.28-32
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    • 2005
  • The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V.

Nerve length measurement method in a radial motor nerve conduction study

  • Kim, Jae-Gyum;Kim, Yoohwan;Seok, Hung Youl;Kim, Byung-Jo
    • Annals of Clinical Neurophysiology
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    • v.19 no.1
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    • pp.28-33
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    • 2017
  • Background: Previous studies of radial nerve conduction study (NCS) did not present how to measure the length of the radial nerve across the elbow, and did not even mention how to manage the spiral course of the nerve. This study aimed to applicate the most reliable method to measure the length of the radial nerve during NCS. Methods: Three points (A, B, and C) were determined along the relatively straight course of the radial nerve. The distance was measured using three different methods: L1) straight distance corresponding to the A-C distance, L2) sum of the distances corresponding to the A-B-C distance, L3) based on the L2, but the elbow is flexed at a $45^{\circ}$ angle. We compared the three methods of distance measurement and the calculated nerve conduction velocities (V1, V2, and V3) in normal healthy subjects. Results: 19 normal participants were enrolled. The mean value for method L1, L2 and L3 were $22.5{\pm}1.8cm$, $24.0{\pm}2.1cm$, and $23.2{\pm}2.1cm$ (p < 0.001). Calculated conduction velocities using those distance measurement methods as follows (p < 0.001): V1 ($60.9{\pm}2.7m/s$), V2 ($64.6{\pm}3.3m/s$), and V3 ($63.4{\pm}3.9m/s$). V2 was significantly greater than V1 and V3 (p < 0.001, p = 0.010, respectively). Conclusions: The distance measurement using a stopover point near the lateral epicondyle between two stimulus points in position of a fully extended elbow with forearm pronation is the most appropriate posture for radial motor NCS.

Asunaprevir, a Potent Hepatitis C Virus Protease Inhibitor, Blocks SARS-CoV-2 Propagation

  • Lim, Yun-Sook;Nguyen, Lap P.;Lee, Gun-Hee;Lee, Sung-Geun;Lyoo, Kwang-Soo;Kim, Bumseok;Hwang, Soon B.
    • Molecules and Cells
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    • v.44 no.9
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    • pp.688-695
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    • 2021
  • The severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) pandemic has become a global health concern. Various SARS-CoV-2 vaccines have been developed and are being used for vaccination worldwide. However, no therapeutic agents against coronavirus disease 2019 (COVID-19) have been developed so far; therefore, new therapeutic agents are urgently needed. In the present study, we evaluated several hepatitis C virus direct-acting antivirals as potential candidates for drug repurposing against COVID-19. Theses include asunaprevir (a protease inhibitor), daclatasvir (an NS5A inhibitor), and sofosbuvir (an RNA polymerase inhibitor). We found that asunaprevir, but not sofosbuvir and daclatasvir, markedly inhibited SARS-CoV-2-induced cytopathic effects in Vero E6 cells. Both RNA and protein levels of SARS-CoV-2 were significantly decreased by treatment with asunaprevir. Moreover, asunaprevir profoundly decreased virion release from SARS-CoV-2-infected cells. A pseudoparticle entry assay revealed that asunaprevir blocked SARS-CoV-2 infection at the binding step of the viral life cycle. Furthermore, asunaprevir inhibited SARS-CoV-2 propagation in human lung Calu-3 cells. Collectively, we found that asunaprevir displays broad-spectrum antiviral activity and therefore might be worth developing as a new drug repurposing candidate for COVID-19.

Study on Mo(V) Species, Location and Adsorbates Interactions in MoH-SAPO-34 by Employing ESR and Electron Spin-Echo Modulation Spectroscopies (ESR, ESEM을 이용한 이온 교환된 MoH-SAPO-34에 대한 Mo의 화학종, 위치 및 흡착상호작용에 관한 연구)

  • Back, Gern-Ho;Jang, Chang-Ki;Ru, Chang-Kuk;Cho, Young-Hwan;So, Hyun-Soo;Kevan, Larry
    • Journal of the Korean Chemical Society
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    • v.46 no.1
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    • pp.26-36
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    • 2002
  • A solid-state reaction of $MoO_3$ with as-synthesized H-SAPO-34 generated paramagnetic Mo(V) species. The dehydration resulted in weak Mo(V) species, and subsequent activation resulted in the formation of Mo(V) species such as $Mo(V)_{5c}$ and $Mo(V)_{6c}$ that are characterized by ESR. The data of ESR and ESEM show the oxomolybdenum species, to be $(MoO_2)^+$ or $(MoO)^{3+}$. The $(MoO_2)^+$ species seems to be more probable. Since H-SAPO-34 has a low framework negative charge, $(MoO)^{3+}$ with a high positive charge can not be easily stabilized. A solution reaction between the solution of silico-molybdic acid and calcined H-SAPO-34 resulted in only $(MoO_2)^+$ species. A rhombic ESR signal is observed on adsorption of $D_2O$, $CD_3OH$, $CH_3Ch_2OD$ and $ND_3$. The Location and coordination structure of Mo(V) species has been determined by three-pulse electron spin-echo modulation data and their simulations. After the adsorption of methanol, ethylene, ammonia, and water for MoH-SAPO-34, three molecules, one molecule, one and one molecule, respectively, are directly coordinated to $(MoO_2)^+)$.