• Elastomers and Composites
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• v.7 no.1
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• pp.53-58
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• 1972

Sublimatographic study on the method of test for sulfur in the petroleum and rubber products was as following results: (1) The relation between the heating temperature$(t_h)$ and the vacuum condensing point(V.C.P.) of sulfur at different degree of vacuum appeared as Fig.4. The results were in good agreement with those expected from the $t_h-V.C.P$ curves of sublimatographic separation of sulfur. (2) The relation between the degree of vacuum and the V.C.P. at different heating temperature of sulfur appeared as follows; $$tv.c.p.=\alpha+{\beta}logP_{va}$$ (3) The V.C.P of sulfur could be physical property comparing with melting point and boiling point. (4) The relation between the V.C.P. and the quantity of sublimation of sulfur becomes quantitative as Fig.7.

• Journal of radiological science and technology
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• v.26 no.3
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• pp.19-24
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• 2003

We carried out studies on development and characteristic of ultrasound brast training biopsy phantom. the major finding were of follow ; (1) C type TMM was shown good homogeneity, brightness and attenuation as like human soft tissue. (2) $TiO_2$ 4.10%w/v TMM was shown good homogeneous echo texture and propagated speed as like the human Tissue. (3) $TiO_2$ type TMM was appeared lower brightness and higher penetration rate than C type TMM. Therefor, Breast TM phantom and target material TMM will be useful $TiO_2$ 4.10 %w/v TMM and C 2.09 %w/v TMM.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.19 no.2
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• pp.125-129
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• 1983

It is customary to assume that the resistance of a jull at uniform speed may be regarded as the sum of viscous and wavemaking component resistance, or C sub(i)=C sub(v)+C sub(w), where C sub(v) is regarded as a function of Reynolds Number R and C sub(w) a function of Froude Number F. Formulae have been obtained for ∂C sub(w)/∂R, ∂C sub(v)/∂F which may be relevant in seeking theoretical grounds for possible interaction between viscous and wavemaking component resistances. The values of ∂C sub(w)/∂R are small. In general they are smaller than corresponding values of ∂C sub(v)/∂R. But although these values are small it does not follow that they are entirely negligible. The Froude assumption that the rate of change of C sub(w) with R is zero must bel regarded as incorrect.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.107-113
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• 1997

$SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.148-148
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• 2010

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.

• Journal of applied mathematics & informatics
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• v.14 no.1_2
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• pp.289-303
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• 2004

The non-rigid molecule group theory (NRG) in which the dynamical symmetry operations are defined as physical operations is a new field of chemistry. Smeyers in a series of papers applied this notion to determine the character table of restricted NRG of some molecules. In this work, a simple method is described, by means of which it is possible to calculate character tables for the symmetry group of molecules consisting of a number of NH3 groups attached to a rigid framework. We study the full non-rigid group (f-NRG) of tetraammineplatinum(II) with two separate symmetry groups C2v and C4v. We prove that they are groups of order 216 and 5184 with 27 and 45 conjugacy classes, respectively. Also, we will compute the character tables of these groups.

• The Korean Journal of Soil Zoology
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• v.4 no.2
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• pp.89-100
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• 1999

Four new and a known spacies of the order Mononchida were described and illustrated. Iotonchus obtusus sp. n. was 2.8 mm long, a=33, b=4.2, c=61, V=68%, buccal cavity=61${\times}$45 mm, and is characterized by having basally situated dorsal tooth, presence of vulval papillae and in having short, hemispherical tail with thick cuticle at terminus. Miconchus vulvapapillatum sp. . was 2.7-3.6 mm long, a=29-36, b=4.1-4.5, c=18.4-21, V=65-69%, buccal cavity=53-61${\times}$29-33 mm, spicules=132-137 mm, ventromedian supplements 28-31, and was characterized by having 5-8 pre- and post vulval papillae in contiguous series, and three pairs of vulval glands. Clarkus koreanus sp. n. was 1.1-1.3 mm long, a=27.5-28.8, b=3.5-3.9, c=12-14.5, V=60-64%, buccal cavity=24-28${\times}$13.5-15 mm, and was characterized by well offset lip region, amphids situated well below to dorsal tooth apex, and vulva elevated, with vulval flap. Coomansus ulsani sp. n. was 1.2-1.5 mm long, a=23.5-26, b=3.4-3.8, c=13.6-14.8, V=65-68%, buccal cavity=36-39${\times}$21-23 mm and was characterized by well offset lip region and a thin longitudinal ridge on vertical walls of stoma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.341-347
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• 2023

In PEMFC, PtCo/C alloy catalysts are widely used because of good performance and durability. However, few studies have been reported on the durability of carbon supports of PtCo/C evaluated at high voltages (1.0~1.5 V). In this study, the durability of PtCo/C catalysts and Pt/C catalysts were compared after applying the accelerated degradation protocol of catalyst support. After repeating the 1.0↔1.5V voltage change cycles, the mass activity, electrochemical surface area (ECSA), electric double layer capacitance (DLC), Pt dissolution and the particle growth were analyzed. After 2,000 cycles of voltage change, the current density per catalyst mass at 0.9V decreased by more than 1.5 times compared to the Pt/C catalyst. This result was because the degradation rate of the carbon support of the PtCo/C catalyst was higher than that of the Pt/C catalyst. The Pt/C catalyst showed more than 1.5 times higher ECSA reduction than the PtCo/C catalyst, but the corrosion of the carbon support of the Pt/C catalyst was small, resulting in a small decrease in I-V performance. In order to improve the high voltage durability of the PtCo/C catalyst, it was shown that improving the durability of the carbon support is essential.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1003-1007
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• 1999

This paper is reported for the stability of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based ceramic varistors with $Er_{2}O_{3}$ added in the addition range 0.0 to 2.0 mol%. The varistors sintered at $130^{\circ}C$ exhibited abrupt positive current creep phenomena, which accompany thermal run away within short times, even under weak d.c. stress. As a result, these varistors were completely degraded. On the contrary, the stability of varistors sintered at $1350^{\circ}C$ was far better than that of $1300^{\circ}C$. In particular, the varistor containing 0.5 mol% $Er_{2}O_{3}$ showed a excellent stability, which the variation rate of the varistor voltage, the nonlinear coefficient, and leakage current is below 1%, 2%, and 3.5%, respectively, even under more severe d.c. stress, such as ($0.8V_{1mA}/90^{\circ}C/12h$) + ($0.85V_{1mA}/115^{\circ}C/12h$) + ($0.9V_{1mA}/120^{\circ}C/12h$) + ($0.9V_{1mA}/150^{\circ}C/12h$). Consequently, it is estimated that the basic composition of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based varistor contain 0.5 mol% $Er_{2}O_{3}$ will be used to the fabrication of the varistors for high performance and stability in a forthcoming.