• The Journal of Internal Korean Medicine
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• v.15 no.2
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• pp.148-162
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• 1994

A Literature study was done for identifying the effects of Bloodletting on C.V.A. The major results of the study were as follows. 1. The frequency of points of Bloodletting on C.V.A. were in order Twelve well point, Ship son, Gold SalivaJade Fluid, Paekoe, Chungchung, Sugu, Sosang, Taechu, Wijung, Kwanchung, etc. 2. The frequency of meridians of Bloodletting on C.V.A. were in order Extra-point, Tongmaek-kyong, Su-gworum-Shimpo-Kyong, Susoyang-Samcho-Kyong, Sutaeum-Pye-Kyong, Choktaeyang-Panggwang-Kyong. ete. 3. The frequency of the site of points of Bloodletting on C.V.A. were in order four extremities, face, neck and head, etc. 4. The effects of Bloodletting on C.V.A. is clear away heat and alleviate pain, therapy for waking up a patient from unconsciousness, dredge the meridian passage, expel wind-evil and promote blood circulation, emergency treatment for collapse, etc, 5. The effects of Bloodletting on the early stage of C.V.A. were wake up the patient from unconsciousness by clearing away the heat and The effects of Bloodletting on sequence of C.V.A. were dredge the meridian passage, 6. The frequency of points and meridians of Bloodletting on Hemiplegia were in order Twelve well point, Kyonjong, Extra-point, Chok soyang-Tam-Kyong, etc. 7. The frequency of points and meridians of Bloodletting on Aphasia were in order Gold Saliva Jade Fluid, Amun, Extra-point, Tongmaek-Kyong, etc. 8. The frequency of points and meridians of Bloodletting on Quadriplegia were in order Ship son, Twelve well point, Koktaek, Wijung, Extra-point, Chok soyang-Tam-Kyong, etc. 9, The frequency of points and meridians of Bloodletting on Vertigo were in order Four Gods Cleverness, Tuyu. Chanjuk, Paekoe, Taeyang, Extra-point, Yang-Kyong, etc. 10. The frequency of points and meridians of Bloodletting on Headache were in order Taeyang, Paekoe, Taechu, Extra-point, Tongmaek-Kyong, Yang-Kyong, etc. 11. The points and meridians of Bloodletting on Bells palsy were Chichang, Hyopko in Yangmyong-Kyong.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.27 no.3
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• pp.292-298
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• 1994

An environmental study was done to examine the distribution of Vibrio mimicus in aquatic environments of Kwangan and Minrak beach, Pusan, Korea. Moreover, both bacteriological characteristics and lethal effects of isolated V. mimicus were observed. Sea water samples were collected monthly from January to September, 1993, and quantitatively analyzed for V. mimicus. This organism was isolated from April(water temperature was $16.3^{\circ}C$), whereas it was not isolated when the water temperature fell below $15^{\circ}C$. V. mimicus counts were not remarkably high, however this study at least describes the distribution and occurrence of the possible highest density in aquatic environments of this region. Among the confirmed V. mimicus strains, the author chose the strongest antibiotic resistant bacterium and named it V. mimicus K-1. This strain has antibiotic resistance to colistin, erythromycin, tetracycline, and penicillin, and most isolates had a higher level of antibiotic resistance than V. mimicus ATCC 33653. The optimum growth for V. mimicus K-1 was observed at $37^{\circ}C$, pH 7.5, and $1\%$ NaCl, respectively. This organism was mostly inactivated by Ultra Violet irradiation (30W, $50^{\circ}C$) for 70 seconds and death lethality increased in proportion to treatment temperature ($D_{50}=5.7min,\;D_{60}=\;2.1min,\;and\;D_{70}=0.7min$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.62-66
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• 1989

$Bi_2S_3$ polycrystalline and $Bi_2S_3$ amorphous thin tilm were grown by the evaporation method. The measured lattic parameters were $a=1.708{\AA},\;b=0.351{\AA},\;and\;C=3.943{\AA}$ at substrate temperature $210^{cric}C$ were shown to have the orthorhombic structure. The energy gape of $Bi_2S_3$ polycrystalline that was made from thin film were measured to be 1.375eV at $289^{cric}K.$ The optical band gap of $Bi_2S_3$ amorphous thin film was measured to be 1.71eV at $289^{cric}K.$ It was supposed to mechanism that a photon absorption was changed at the center of 674nm (1.84eV)

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of the Korean Geotechnical Society
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• v.17 no.2
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• pp.5-12
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• 2001

고유기질토의 정규압밀과 과입밀에 대한 압밀특성을 연구하기 위하여 전북지역에서 채취한 2종류의 고유기질토 IS와 YJ를 사용하여 일련의 실내 표준압밀시험과 반복압밀시험을 수행하였다. 전북지역 대표적인 고유기질토의 물리적 특성은 유기물함량이 각각 58%와 72%, 자연함수비 487%와 635%, 초기공극비 7.02와 9.72이었다. 표준압밀시험결과 K, $M_{v}$ , $C_{v}$ 는 압밀하중이 증가함에 따라서 선행하중을 경계로 일반 점토보다 크게 감소하는 특성을 보였다. 또한 2단계, 3단계 반복압밀 시험결과 K, $M_{v}$ 는 압밀하중이 증가함에 따라서 완만하게 감소하였으며 표준압밀시험결과보다는 작게 나타났다. 2단계 반복압밀의 경우 $C_{v}$ 는 정규압밀영역에서 표준압밀시험결과보다 약 10-12배정도 크게 나타났다. $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 각각 선행하중의 약 2.5배, 3배 하중을 정점으로 크게 증감하는 고유기질토 고유의 특성을 나타냈다. 고유기질토의 $C_{c}$ , $C_{a}$ 는 일반 점토보다 압밀압력 의존성이 큰 특성을 나타냈으며 최대값도 각각 2.9-3.8, 0.3-0.4로 일반 점토보다 큰 값을 보였다. 2단계, 3단계 반복압밀시험결과 $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 약간 증가하였다. $C_{a}$ 는 OCR이 증가함에 따라서 감소하였으며 특히 OCR이 1-2 범위에서 감소폭이 크게 나타났다. 고유길토의 제압밀계수는 반복회수 및 하중의 크기 등에 따라서 큰 영향을 받으며 또한 과압밀 크기의 대소는 고유기질토의 $C_{a}$ 에 큰 영향을 미치는 것으로 생각되어 이 분야에 대한 더 많은 연구가 필요하다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.67-68
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• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• KSBB Journal
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• v.18 no.3
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• pp.180-185
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• 2003

Glycosaminoglycans (GAGS was extracted from sea squirt, Styela clava with sodium phosphate at 105$^{\circ}C$ for 2 hr and deproteinized with trichloroacetic acid or hydrochloride. The GAGs obtained from tunic consist 41.7% crude carbohydrates, 31.8% crude protein, and 31.2% sulfate. It was mainly constituted of galactose, glucosamine, glucose, mannose, and glacrosamine. The prominent amino acid were phenylalanine, threonine, glutamic acid, and aspartic acid. Mineral contents was mainly constituted 3.0 mg% sodium, 1.6 mg% potassium, and 1.2 mg% phosphorus. Trichloroacetic acid, hydrochloride and 5-sulfosalicylic acid were used for deprotein of the GAGs. Effective volume for deprotein of crude GAGs were 5.0% trichloroacetic acid (w/v) and 10.0% HCI (v/v) treatment. The deproteinized GAGs contained 35.1%, 35.4% of protein and 22.0%, 18.5% of sulfate, respectively.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.782-786
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• 1999

CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.2
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• pp.43-52
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• 2017

Heat treatment condition for dissolution of the M23C6 carbides in 2.25Cr-1Mo-V-Ti material for thermal power plant tube was investigated using a dilatometer method. 2.25Cr-1Mo-V-Ti material was heat-treated at $900{\sim}1,100^{\circ}C$ for 0, 10, 30 min to find the proper dissolution condition of M23C6 carbides. The phase identification and volume fraction of the carbide were measured by using OM, SEM, EBSD and TEM analysis. Optimal heat treatment condition of M23C6 carbide dissolution was selected by predicting dissolution temperature of carbide using Bs points appeared at dilatometer curve. Experimental results showed that the conditions of carbide dissolution was 900, 1,000, $1,100^{\circ}C$ for 30 min. Eventually, the optimal heat treatment condition for dissolution was 30 min at $1,000^{\circ}C$ considering the minimum coarsening of Austenite grain size.