• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Corrosion Science and Technology
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• v.23 no.5
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• pp.383-392
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• 2024

The presence of transition metals V, Cr or Mn in a 55%Al-Zn based coating metal can modify the equilibrium intermetallic phase, τ5c, by diffusion of transition metals and substituting for iron in the τ5c phase. We experimentally confirmed the modification of the IMC phase using various analytical techniques to characterize IMC phases. Experimental results confirmed the formation of a modified τ5c-Al₂₀(Fe,V)₅Si₂(+Zn) intermetallic phase. The modified IMC phase showed periodic repeating layers with varying concentrations of V while still maintaining a constant (Fe+V)/Fe ratio within the homogeneity range of Fe in the equilibrium IMC phase. We proposed a reaction-diffusion mechanism for forming a modified IMC phase and a periodic layered structure. The initial reaction of the steel strip resulted in the formation of Fe₄Al₁₃ IMC phase. Al, Si, and Zn diffused and reacted with Fe₄Al₁₃ to form the equilibrium bcc phase, τ5c. The Fe₄Al₁₃ phase was consumed in the reaction, followed by diffusion of V into the newly formed phase by substitution of Fe by V, resulting in formation of the modified IMC phase. At 600 ℃, the τ5c phase could dissolve up to 4.13 wt% (2.73 at.%) V without changing its overall bcc crystal structure.

• Korean journal of food and cookery science
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• v.12 no.1
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• pp.6-12
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• 1996

The survival and growth of Vibrio parahaemolyticus in tryptic soy broth(TSB), flounder homogenate and oyster homogenate with 0 or 5% of ethanol was tested at -20, 5, 35, 45 and 50$^{\circ}C$. Growth pattern of V. parahaemolyticus was similar in TSB and flounder homogenate but slightly poor in oyster homogenate at 35$^{\circ}C$. Growth occured at 5% ethanol, in TSB and flounder homogenate after a prolonged lag period but decreased in oyster homogenate during incubation at 35$^{\circ}C$. TSB and fish homogenates containing 0 or 5% of ethanol were inoculated with 10$\^$6/-10$\^$7/ cells/ml of V. parahaemolyticus and cold or heat resistance of the cells were determined at -20, 5, 45 and 50$^{\circ}C$. At 5$^{\circ}C$, the viability in culture broth with 5% of ethanol or without ethanol was not vary with the culture broth. In the presence of 5% of ethanol at -20$^{\circ}C$, cells of V. parahaemolyticus in flounder homogenate and oyster homogenate were more significantly inhibited than in TSB. The D-valves for V. parahaemolyticu at 45 and 50$^{\circ}C$ was significantly lower in oyster homogenate than in TSB and flounder homogenate with 5% of ethanol or without ethanol. The D-values in each culture broth without ethanol were 1.9-3.5 times of that value in each culture broth containing 5% of ethanol at 45 and 50$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.279-285
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• 2003

Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.

• YAKHAK HOEJI
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• v.40 no.2
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• pp.193-201
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• 1996

In order to study the role of C-terminal aromatic region of T4 endonuclease V in the interaction with substrate DNA, NMR and Fluorescence spectrum were recorded. Analysis of flu orescence emission spectra showed that C-terminal region of T4 endonuclease V is in or very near the binding site. In the HSQC spectrum of $^{15}N$-Tyr-labeled T4 endonuclease V*DNA complex, the broadening of a peak was observed. It is presumed that this peak corresponds to one among three tyrosine residues which belong to the WYKYY segment of C-terminal region of T4 endonuclease V. Interactions of peptide fragments consisting of C-terminal residues of T4 endonuclease V with DNAs(TT-, T^T-DNA) were investigated by NMR and Fluorescence experiment. The results suggest that two peptide fragments themselves bind to DNAs and their binding pattern is not an intercalation mode.

• Journal of radiological science and technology
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• v.21 no.1
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• pp.59-64
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• 1998

[ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Journal of Life Science
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• v.13 no.4
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• pp.498-504
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• 2003

This Study was carried out to investigate the optimal mycelial growth of Pholiota nameko. The optimal medium for the mycelial growth was ME medium. The optimal temperature and pH were $25^{\circ}C$$\pm$1 and 5.5, respectively. The modified optimal medium compositions were glucose 3% (w/v), malt extract 0.25% (w/v), yeast extract 0.25% (w/v), $KH_2PO_4$ 0.046% (w/v), $K_2HPO_4$ 0.1% (w/v), $MgSO_4$ㆍ$7H_2O$ 0.05% (w/v). From the result of experiments on the optimal temperature, pH and nutritional requirements, the mycelial growth of modified optimal medium was higher than that of ME medium.