• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.325-328
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• 2018

With the rapid development of autonomous driving technology, commercialization of freight cars and buses as well as passenger cars has come to the near future. As researches for commercialization of autonomous navigation are being actively carried out in various countries around the world, in accordance with the development of technology, this paper proposes a bus adopting a new concept of community driving technology based on C-V2X for more effective autonomous driving of buses do. In order to realize the cluster bus, we propose a more effective cluster bus using C-V2X, which is the core communication of the cluster driving, which is complementary to the existing V2X for inter-vehicle communication and vehicle-to-infrastructure communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.111-115
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• 2003

200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.661-663
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• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.198-203
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• 1995

The Mo(V) $di-\mu-oxo$ type $(Mo_2O_4(H_2O)_2L)$ complexes $(L:\;C_3H_7CH(SCH_2COOH)_2,\;C_6H_5CH(SCH_2COOH)_2,\;CH_3OC_6H_4CH(SCH_2COOH)_2,\;C_5H_{10}C(SCH_2COOH)_2,\;C_3H_7C(CH_3)(SCH_2COOH)_2,\;C_3H_7CH(SCH_2CH_2COOH)_2,\;C_6H_5CH(SCH_2CH_2COOH)_2)$ have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of dithiodicarboxy ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate type between two molybdenum. In $Mo_2O_4(H_2O)_2L$, two $H_2O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, and nuclear magnetic resonance spectra. In the potential range -0.00 V to -1.00 V at a scan rate of 20 $mVs^{-1}$, a cathodic peak at -0.50∼-0.58 V (vs. SCE) and an anodic peak at -0.40∼-0.43 V (vs. SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current ($I_{pc}/I_{pa}$) is almost 1, we infer that redox is reversible reaction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.487-493
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• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2022.06a
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• pp.836-838
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• 2022

3D Point Cloud는 3D 콘텐츠를 더욱 실감 나게 표현하기 위한 데이터 포맷이다. Point Cloud 데이터는 3차원 공간상에 존재하는 데이터로 기존의 2D 영상에 비해 거대한 용량을 가지고 있다. 최근 대용량 Point Cloud의 3D 데이터를 압축하기 위해 V-PCC(Video-based Point Cloud Compression)와 같은 다양한 방법이 제시되고 있다. 따라서 Point Cloud 데이터의 원활한 전송 및 저장을 위해서는 V-PCC와 같은 압축 기술이 요구된다. V-PCC는 Point Cloud의 데이터들을 Patch로써 뜯어내고 2D에 Projection 시켜 3D의 영상을 2D 형식으로 변환하고 2D로 변환된 Point Cloud 영상을 기존의 2D 압축 코덱을 활용하여 압축하는 기술이다. 이 V-PCC로 변환된 2D 영상은 기존 2D 영상을 전송하는 방식을 활용하여 네트워크 기반 전송이 가능하다. 본 논문에서는 V-PCC 방식으로 압축한 V3C 데이터를 방송망으로 전송 및 소비하기 위해 MPEG Media Transport(MMT) Packet을 만드는 패킷화 방안을 제안한다. 또한 Server와 Client에서 주고받은 V3C(Visual Volumetric Video Coding) 데이터의 비트스트림을 비교하여 검증한다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.7
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• pp.1255-1260
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• 2007

[ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

• Journal of Advanced Navigation Technology
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• v.27 no.6
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• pp.861-864
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• 2023

Recently, V2X (vehicle-to-everyting) communication has established itself as an essential technology for cooperative autonomous driving. V2X communication currently includes DSRC (dedicated short range communication) communication technology, which is a WLAN (wireless local area network) based communication technology, and C-V2X (cellular-V2X) communication technology, which is a Cellular-based communication technology. Since these two communication methods are not compatible with each other, various studies and experiments are being conducted to select one of the two communication methods. In the case of C-V2X communication, there are LTE-V2X (long term evolutionV2X) communication technology, which is an initial version, and 5G-V2X communication technology, which is a next-generation version. 5G-V2X communication technology has been completed only until standardization, so LTE-V2X communication technology is mainly used. In this paper, we introduce trends related to various issues in V2X communication, including communication method decisions.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.333-340
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• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².