• Title/Summary/Keyword: V2C

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Refinement of the Structure of p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone (p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone구조의 정밀화)

  • Seo, Il-Hwan;Seo, Chu-Myeong;Park, Yeong-Ja
    • Korean Journal of Crystallography
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    • v.2 no.1
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    • pp.12-16
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    • 1991
  • C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

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Characterization of Surface Oxides in Gold Thin Films with V- and Ti- underlays by AES and XPS (AES/XPS를 이용한 Au/V, Au/Ti 박막의 표면산화물 분석)

  • Kim, Jin -Young
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.100-105
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    • 1992
  • Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analyses have been performed on double-structured Au/V and Au/Ti thin films after heat treatment at 500$^{\circ}$C in air. V- and Tiunderlays sandwiched between gold thin films and SiOz substrates form oxides on the free surface of gold films during the heat treatment. The chemical compositions of the oxides were identified as V205 and TiOz in Au/V and Au/Ti thin films, respectively.

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Low-Power CMOS On-Chip Voltage Reference Circuits (저전력 CMOS On-Chip 기준전압 발생회로)

  • Kwon, Duck-Ki;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.4 no.2 s.7
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    • pp.181-191
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    • 2000
  • In this paper, two schemes of generating reference voltages using enhancement-mode MOS transistors and resistors are proposed. The first one is a voltage-mode scheme where the temperature compensation is made by summing a voltage component proportional to a threshold voltage and a voltage component proportional to a thermal voltage. In the second one, that is a current-mode scheme, the temperature compensation is made by summing a current component proportional to a threshold voltage and a current component proportional to a thermal voltage. The designed circuits have been simulated using a $0.65{\mu}m$ n-well CMOS process parameters. The voltage-mode circuit has a temperature coefficient less than $48.0ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.21%/V for a temperature range of $-30^{\circ}C{\sim}130^{\circ}C$ and a VDD range of $3V{\sim}12V$. The current-mode circuit has a temperature coefficient less than $38.2ppm/^{\circ}C$ and a VDD coefficient less than 0.8%/V for $-30^{\circ}C{\sim}130^{\circ}C\;and\; 4V{\sim}12V$. The power consumption of the voltage-mode and current-mode circuits are $27{\mu}W\;and\;65{\mu}W$ respectively for 5V and $30^{\circ}C$. Measurement results show that the voltage-mode reference circuit has a VDD coefficient less than 0.63%/V for $30^{\circ}C{\sim}100^{\circ}C$ and has a temperature coefficient less than $490ppm/^{\circ}C\;for\;3V{\sim}6V$. The proposed reference circuits are simple and thus easy to design. The proposed current-mode reference circuit can be designed to generate a wide range of reference voltages.

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CLASSIFICATION OF TWO-REGULAR DIGRAPHS WITH MAXIMUM DIAMETER

  • Kim, Byeong Moon;Song, Byung Chul;Hwang, Woonjae
    • Korean Journal of Mathematics
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    • v.20 no.2
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    • pp.247-254
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    • 2012
  • The Klee-Quaife problem is finding the minimum order ${\mu}(d,c,v)$ of the $(d,c,v)$ graph, which is a $c$-vertex connected $v$-regular graph with diameter $d$. Many authors contributed finding ${\mu}(d,c,v)$ and they also enumerated and classied the graphs in several cases. This problem is naturally extended to the case of digraphs. So we are interested in the extended Klee-Quaife problem. In this paper, we deal with an equivalent problem, finding the maximum diameter of digraphs with given order, focused on 2-regular case. We show that the maximum diameter of strongly connected 2-regular digraphs with order $n$ is $n-3$, and classify the digraphs which have diameter $n-3$. All 15 nonisomorphic extremal digraphs are listed.

Magnetostriction Measurement of an $Fe_49Co_49V_2$ Alloy using the Michelson Laser Interferometer Compensated by Feedback Signal (궤환신호로 보상되는 Michelson 레이저 간섭계를 이용한 $Fe_49Co_49V_2$ 합금의 자기변형 측정)

  • 안승준;김철기;김호섭;김호철;남궁정
    • Journal of the Korean Magnetics Society
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    • v.10 no.5
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    • pp.246-249
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    • 2000
  • An Fe$_{49}$ Co$_{49}$ V$_2$alloy is annealed in thermal annealing furnace at 50$0^{\circ}C$, 75$0^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$. Annealed samples were cooled in air. The magnetostriction is measured by using a Michelson laser interferometer. Receiving the feedback signal of interference, a mirror attached to piezoelectric transducer (PZT) maintains the optical path length (OPL) between two arms of laser interferometer relatively constant. The feedback voltage is calibrated to the OPL variation. A magnetostriction of 2$\times$10$^{-6}$ at H = 60 Oe increases up to 33.68$\times$10$^{-6}$ at an annealing temperature of 90$0^{\circ}C$, suggesting that the magnetostrictive characteristics are improved by the microstructural modification.

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POSITIVE RADIAL SOLUTIONS FOR A CLASS OF ELLIPTIC SYSTEMS CONCENTRATING ON SPHERES WITH POTENTIAL DECAY

  • Carriao, Paulo Cesar;Lisboa, Narciso Horta;Miyagaki, Olimpio Hiroshi
    • Bulletin of the Korean Mathematical Society
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    • v.50 no.3
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    • pp.839-865
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    • 2013
  • We deal with the existence of positive radial solutions concentrating on spheres for the following class of elliptic system $$\large(S) \hfill{400} \{\array{-{\varepsilon}^2{\Delta}u+V_1(x)u=K(x)Q_u(u,v)\;in\;\mathbb{R}^N,\\-{\varepsilon}^2{\Delta}v+V_2(x)v=K(x)Q_v(u,v)\;in\;\mathbb{R}^N,\\u,v{\in}W^{1,2}(\mathbb{R}^N),\;u,v&gt;0\;in\;\mathbb{R}^N,}$$ where ${\varepsilon}$ is a small positive parameter; $V_1$, $V_2{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ and $K{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ are radially symmetric potentials; Q is a $(p+1)$-homogeneous function and p is subcritical, that is, 1 < $p$ < $2^*-1$, where $2^*=2N/(N-2)$ is the critical Sobolev exponent for $N{\geq}3$.

Correlation Effects in Superconducting $Sr_2VO_3FeAs$ (초전도 $Sr_2VO_3FeAs$에서 상관효과)

  • Lee, K.W.
    • Progress in Superconductivity
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    • v.12 no.1
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    • pp.46-50
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    • 2010
  • In the superconducting $Sr_2VO_3FeAs$, containing bimetallic layers, with maximum $T_c{\approx}\;46\;K$ correlation effects on V ions have been investigated using LDA+U method. Within the local density approximation (LDA) this system has the one-third filled $t_{2g}$ manifold of V, decomposed into $d_{xy}$ of bandwidth W=2 eV and nearly degenerate $d_{zx}d_{yz}$ of W=1 eV. Consideration of correlation effects leads to a metal-insulator transition on V ions $t^{2\uparrow}_{2g}\;{\rightarrow}\;d^{1\uparrow}_{xz}\;d^{1\uparrow}_{yz}$ at the critical on-site Coulomb repulsion $U_c$= 3.5 eV. At U=4 eV, the electronic structure, in which V ions are insulating, leads to several van Hove singularities near $E_F$ and similar Fermiology with other pnictides. Applying U to V ions results in increasing Fe moment as well as V moment, indicating somewhat hybridization between Fe and V ions even though this system is strongly 2-dimesional. Our results show possible importance of correlation effects on this system.

Analyze of I-V Characteristics and Amorphous Sturcture by XRD Patterns (XRD 패턴에 의한 비정질구조와 I-V 특성분석)

  • Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.7
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    • pp.16-19
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    • 2019
  • A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

Preparation and Electrical Conductivity of CuO-Bi2O3-V2O5 Glass for Solid State Batteries

  • Jeong, Dong-Jin;Park, Hee-Chan;Lee, Heun-Soo;Park, Chan-Young
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.183-188
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    • 1999
  • The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

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Determination of new anti-HIV agents, the KR-V series, in rat plasma using microbore high-performance liquid chromatography (HPLC를 이용한 랫드혈장내 새로운 항HIV제 KR-V series의 분석법)

  • Lee, Young-mi;Park, Myung-jin;Kim, Jin-suk;Shin, Ho-chul
    • Korean Journal of Veterinary Research
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    • v.40 no.4
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    • pp.741-746
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    • 2000
  • We have developed a rapid, simple and precise high-performance liquid chromatographic (HPLC) method using an UV detection system for the determination of new anti-HIV candidates, nineteen KR-V compounds, in rat plasma. We used a analytical columnn of $C_{18}$ ($5{\mu}m$, $250{\times}2.0mm$ I.D.) and a mobile phase of water and ACN mixture (40/60, v/v). Under these conditions, all the KR-V compounds were readily separated from plasma with retention times of 4-12 min. The limits of quantitation for the 19 KR-V compounds were 15-30 ng/ml. The recoveries from the plasma were higher than 85% (C.V.<10%) with exception of KR-V 2, 7 and 15. The compounds KR-V 2, 7 and 15, containing ester moieties, were found to be unstable in plasma. This result suggests that esters, like KR -V 2, 7 and 15, should be excluded from future structure design studies of anti-HIV KR-V agents. In conclusion, the current HPLC method is a valuable analytical tool for investigating the pharmacokinetics of the KR-V series in rats.

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