• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.83-88
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• 2010

We investigated the electronic structure and magnetism of the (3d, 4d)-Pd alloyed c($2{\times}2$) monolayer systems, by use of the FLAPW band method. For comparison, pure 3d- and 4d-transition metal monolayers are also considered. We found that the antiferromagnetic configuration of pure V monolayers is sustained in the V-Pd alloy system, while the Ti-Pd alloy system is changed to antiferromagnetic configuration from the ferromagnetic state in pure Ti monolayer. The 4d TM (Mo, Ru, Rh)-Pd monolayers are found to be stable in ferromagnetic configurations. The magnetic moments of Ru and Rh atoms in Ru-Pd and Rh-Pd systems are almost same with those of pure Ru and Rh monolayers, while the magnetic moment of Mo atom is increased to $2.98\;{\mu}_B$ in Mo-Pd alloyed system from the value of Mo monolayer, $0.02\;{\mu}_B$.

• Journal of Ginseng Research
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• v.21 no.2
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• pp.109-114
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• 1997

The effect of total saponin fraction of Ginseng injected intrathecally (i.1.) or in- tracerebroventricularly (i.c.v.) on the antinociception induced by D-$Pen^{2,5}$- enkephalin (DPDPE) ad ministered i.c.v. was studied in ICR mice in the present study. The antinociception was assessed by the tail-flick test. Total saponin fraction at doses 0.1 to 1.0 $\mu\textrm{g}$, which administered i.t. Alone did not affect the latencies of tail-flick threshold, attenuated dose-dependently the inhibition of the tail-flick response induced by i.c.v. administered DPDPE (10 $\mu\textrm{g}$). However, total saponin fraction at doses 1 to 20 $\mu\textrm{g}$, which administered i.c.v. Alone did not affect the latencies of the tail-flick response, did not affect i.c.v. administered DPDPE (10 $\mu\textrm{g}$)-induced antinociception. The duration of antagonistic action of total saponin fraction against DPDPE-induced antlnociception was lasted at least for 6 hrs. Various doses of ginsenosides Rd, but not $\Rb_2$, Rc, Rg1, and $\Rb_1$ and Re, injected i.t. Dose-dependently attenuated antinociception induced by DPDPE administered i.c.v. Our results indicate that total saponin fraction injected spinally appears to have antagonistic action against the antinociception induced by supraspinally applied DPDPE. Ginsenoside Rd appears to be responsible for blocking j.c.v. administered DPDPE-induced antinociception. On the other hand, total ginseng fraction, at supraspinal sites, may not have an antagonistic action against the antinociception induced by DPDPE.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.180-181
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• 2003

Czochralski 방법으로 KMg $F_3$：S $m^{2+}$ 결정을 성장시키고 고 분해 레이저 분광법을 이용하여, 형광특성을 조사하였다. S $m^{2+}$ 이온이 KMg $F_3$ 결정에서 $C_{4v}$, $C_{2v}$, $C_{3v}$ 및 $O_{h}$ 형광 방출 사이트를 가진다는 것을 확인하였고, 아울러 각 사이트의 에너지 준위를 구하였다. 구하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Annals of Clinical Neurophysiology
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• v.4 no.1
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• pp.85-88
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• 2002

Ramsay-Hunt syndrome is a viral disease associated with peripheral facial nerve paralysis accompany by erythematous vesicular rashs on the ear(zoster oticus) or in the mouth. Based on clinical presentations that indicated involvement of more than one ganglion, the gasserian, geniculate, petrous, accessory, jugular and second and third dorsal root ganglia comprised a chain in which inflammation of a single ganglion could extend to nearby ganglia. A 71-year-old man presented with left. peripheral facial palsy with otalgia, vesicular eruption in $V_2$, $V_3$, C2, C3 dermatome, tinnitus, and hearing loss.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.414-422
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• 2002

Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Composites Research
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• v.37 no.4
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• pp.286-290
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• 2024

The rapid increase in the demand for energy has put huge pressure on fossil fuels. The continuous overutilization of these existing non-renewable energy sources has been causing severe environmental concerns. In these regards, electrochemical water splitting has gained huge attention for producing green hydrogen, a superior energy source with high gravimetric energy density (120 MJ/kg), as compared with conventional options. Electrochemical water splitting is a viable option for generating green hydrogen. However, the various limitations of state-of the art Pt/C and RuO₂- based electrocatalysts has motivated the scientific community to develop novel cathode (hydrogen evolution reaction (HER)) and anode (oxygen evolution reaction (OER)) electrocatalysts. In our present study, we have achieved a new milestone by fabricating the NiMo-based transition metal LDHs coupled V₂C MXene support based heterocatalyst. The synergistic impact of NiMo LDHs (corrosion resistance, favorable intrinsic catalytic properties, etc.) and V₂C (high electrical conductivity, pseudocapacitive behavior, etc.) has resulted in the HER and OER at smaller overpotential of 135 and 370 mV at the current density of 10 and 30 mA cm-2 in an alkaline (1.0 M KOH) environment.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.