• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.243.1-243.1
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• 2013

본 연구에서는 산소 분압과 열처리 온도에 따른 ITZO 박막 트랜지스터의 전기적 특성 향상을 목적으로 실험을 진행하였다. 1) ITZO 박막 증착 시 산소 분압 가변($O_2/(Ar+O_2)$ 30~40%), 열처리 온도 고정($350^{\circ}C$)과 2) ITZO 박막 증착 시 산소 분압 고정(30%), 열처리 온도($200{\sim}400^{\circ}C$)를 가변하여 실험을 진행하였다. 두 실험 모두 특성향상을 위해 산소 분위기에서 열처리를 진행하였다. 산소의 분압이 증가할수록 산소 빈자리를 채우면서 전자 농도가 감소하여 채널 전도 효과가 줄어들면서 Hump 현상이 발생하였고, 스윙이 증가, 문턱 전압이 음의 방향으로 이동하였다. 이에 $O_2/(Ar+O_2)$)의 30%에서 30%일때, 문턱전압은 1.98 V, 전계 효과 이동도는 28.97 $cm2/V{\cdot}s$, sub-threshold swing은 280 mv/dec, on-off 비율은 ~107로 가장 우수한 전기적 특성을 보였다. 또한 열처리 온도 가변 시 $400^{\circ}C$에서 전계 효과 이동도는 28.97 $cm^2/V{\cdot}s$로 $200^{\circ}C$의 전계 효과 이동도는 11.59 $cm^2/V{\cdot}s$에 비해 약 3배 증가하였고, 소자의 스위칭 척도인 sub-threshold swing은 약 180 mv/dec 감소하였다. 문턱 전압은 0.97V, on-off ratio는 약 107을 보였다. 동일한 산소 분압의 분위기에서 $400^{\circ}C$ 열처리 시 가장 우수한 전기적 특성을 보였고, 저온 공정으로 인한 플렉서블 디스플레이 투명 디스플레이 적용 가능성을 확인하였다.

• Journal of Surface Science and Engineering
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• v.16 no.4
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• pp.173-187
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• 1983

Zinc was electrodeposited at temperature from 20$^{\circ}C$ to 60$^{\circ}C$ over the ranges of the current density from 2 to 20 A/dm2 in acid chloride bath. The cathode overpotentials increased with increasing current density and decreasing tem-perature. The (10$.$3)-(10$.$2) preferred orientation developed at cathode overpotentials below about 450mV, the (10$.$3)(10$.$2)-(10$.$1) texture developed at overpotentials between 500mV and 950mV, and the (00$.$1) (10$.$3) texture developed at cathode overpotentials about 1000mV. The (00$.$1) (10$.$3) preferred orientation was also formed at the lower potentials between 400mV and 850mV at temperatures above 40$^{\circ}C$. The preferred orientations of the zinc deposits was discussed was discussed with both cathode overpo-tential and surface energy of deposit lattice planes. The pyramid type of structure with macrostep developed at low cathode overpotentials and the truncated pyramidal type developed at higher overpotenial.

• The Journal of Korean Society for Radiation Therapy
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• v.25 no.2
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• pp.131-136
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• 2013

Purpose: Quantitative comparative evaluation of the difference in eye lens absorbed dose when measured by MVCT and kV-CBCT, though such a dose was not included in the original IMRT treatment plan for the nasopharyngeal cancer patient. Materials and Methods: We used CT (Lightspeed Ultra 16, General Electric, USA) against an Anderson rando phantom (Alderson Research Laboratories Inc, USA) and established the plan for tomotherapy treatment (Tomotherapy, Inc, USA) and linear accelerator treatment (Pinnacle 8.0, Philips Medicle System) for the achieved CT images on the same condition with the nasopharyngeal cancer patient treatment plan. Then, align the ther-moluminescence dosimeter (TLD100 Harshaw, USA) with the eye lens, shot the lens with Tomotherapy MVCT under 3 conditions (Fine, Normal, and Coarse), and shot both lenses with kV-CBCT under 2 conditions (Low Dose Head and Standard Dose Head) 3 times each. Results: When we analyzed the eye lens absorbed dose according to MVCT and kV-CBCT images by using both Tomotherapy and Pinacle 8.0, we achieved the following result; According to Tomotherapy MVCT, RT 0.8257 cGy in the Coarse mode, LT 0.8137 cGy, RT 1.089 cGy and LT 1.188 cGy in the Normal mode, and RT 2.154 cGy and LT 2.082 cGy in the Fine mode. According to Pinacle 8.0 kV-CBCT, RT 0.2875 cGy and LT 0.1676 cGy in the Standard Dose mode and RT 0.1648 cGy and LT 0.1212 cGy in the Low-Dose mode. In short, the MVCT result was significantly different from that of kV-CBCT, up to 20 times. Conclusion: We think kV-CBCT is more effective for reducing the amount of radiation which a patient is receiving during intensity modulated radiation treatment for other purposes than treatment than MVCT, when we consider the absorbed dose only from the viewpoint of image-guided radiation therapy. Besides, we understood the amount of radiation is too sensitive to the shooting condition, even when we use the same equipment.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.18 no.5
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• pp.126-141
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• 2019

One of the Cooperative Intelligent Transportation System(C-ITS) priority services is collision prevention support service. Several studies have considered V2I2V communication-based collision prevention support services using Artificial Neural Networks(ANN). However, such services still show some issues due to a low penetration of C-ITS devices and large delay, particularly when loading massive traffic data into the server in the C-ITS center. This study proposes the Artificial Neural Network-based Collision Warning Service(ACWS), which allows upstream vehicle to update pre-determined weights involved in the ANN by using real-time sectional traffic information. This research evaluates the proposed service with respect to various penetration rates and delays. The evaluation result shows the performance of the ACWS increases as the penetration rate of the C-ITS devices in the vehicles increases or the delay decreases. Furthermore, it reveals a better performance is observed in more advanced ANN model-based ACWS for any given set of conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.193-198
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• 1983

This experiment has been carried out for the purpose of investigating the effect of $V_2O_5$ and $H_3BO_3$ additives on sintering of magnesium oxide over the temperature range of 1300-150$0^{\circ}C$ MgO powder has been obtained by calcin-ing extra reagent grade magnesium carbonate(basic) at 90$0^{\circ}C$ for 30 minutes. The specimens were prepared by compression with pressure of 700Kg/cm2 then fired at 1300-150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of fired specimens were examined. Densification rates obeyed the equation D=K 1n t+C. The ratio of density in case of addition of $V_2O_5$ to theoretical density of pure periclase was 95-99% Activation energy of densification in case of $V_2O_5$ addition was 30.15 Kcal/mole. The range of average grain size in case of addition of $V_2O_5$ was 40-50$\mu\textrm{m}$. $H_3BO_3$ addtivie had not an effect on densification of MgO.

• Journal of the Korean Chemical Society
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• v.67 no.6
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• pp.407-414
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• 2023

The present study uses quasi-classical trajectory procedures to examine the vibrational relaxation and dissociation of the methyl and ring C-H bonds in excited methylpyrazine (MP) during collision with either N₂ or O₂. The energy-loss (-ΔE) of the excited MP is calculated as the total vibrational energy (E_T) of MP is increased in the range of 5,000 to 40,000cm^-1. The results indicate that the collision-induced vibrational relaxation of MP is not large, increasing gradually with increasing E_T between 5,000 and 30,000 cm^-1, but then decreasing with the further increase in E_T. In both N₂ and O₂ collisions, the vibrational relaxation of MP occurs mainly via the vibration-to-translation (V→T) and vibration-to-vibration (V→V) energy transfer pathways, while the vibration-to-rotation (V→R) energy transfer pathway is negligible. In both collision systems, the V→T transfer shows a similar pattern and amount of energy loss in the ET range of 5,000 to 40,000cm^-1, whereas the pattern and amount of energy transfer via the V→V pathway differs significantly between two collision systems. The collision-induced dissociation of the C-H_methyl or C-H_ring bond occurs when highly excited MP (65,000-72,000 cm^-1) interacts with the ground-state N₂ or O₂. Here, the dissociation probability is low (10^-4-10^-1), but increases exponentially with increasing vibrational excitation. This can be interpreted as the intermolecular interaction below E_T = 71,000 cm^-1. By contrast, the bond dissociation above E_T = 71,000 cm^-1 is due to the intramolecular energy flow between the excited C-H bonds. The probability of C-H_methyl dissociation is higher than that of C-H_ring dissociation.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.607-612
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• 1998

다합금계백주철의 성분원소인 Cr, V, Mo 및 W 의 첨가량을 변화시켜 응고조직을 관찰하였다. MC탄화물은 초정 austenite dendrite 내에 괴상 및 구상으로 M7C3탄화물은 intercellular boundary에 꽃형태 또는 bar 형태로, 그리고 M2C 탄화물은 M7C3탄화물과 마찬가지로 intercellular boundary에 침상으로 정출하였다. 기지조직은 주방상태에서 pealite 또는 (pearlite + austenite)의 혼합조직으로 구성되어 있었으며, 또한 EPMA 분석결과 MC탄화물은 V, M7C3 탄화물은 Cr 그리고 M2C탄화물은 Mo 및 W가 주성분으로 되어 있음을 알 수 있었다. 냉각곡선을 측정한 결과 액상에서 MC, M7C3, M2C 순으로 공정반응이 일어나고 있었으며 또한 X-선 회절시험을 통해 각 탄화물의 회절 peak를 관찰하였는바 응고조직의 사진과 잘 일치하고 있음을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.122-127
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• 2007

In this research, amophous carbon films (a-C, a-C:H, a-C:N) were synthesized by closed-field unbalanced magnetron (CFUBM) sputtering using graphite target. We also fabricated amorphous carbon films with applying negative DC bias voltage of 200 V in during the deposition in working pressure. Also, a-C:H and a-C:N films was synthesized by adding acethylene($C_{2}H_{2}$) and nitrogen(N) gases of 4 and 3 sccm into Ar pressure. The a-C:H film synthesized at -200 V exhibited the maxumum hardness of 26.3 GPa, the smooth surface of 0.1 nm and the good adhesion of 30.5 N. And a-C:N film synthesized at -200 V exhibited at -200 V exhibited the best adhesion of 32 N. This paper examined the effect of $C_{2}H_{2}$ gas, $N_{2}$ gas and negative DC bias voltage as the parameter for improving the physical properties and the relation between structral and physical properties of carbon films.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.