• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of Digital Convergence
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• v.20 no.2
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• pp.345-351
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• 2022

For simple undirected graph G=(V,E), L(2,1)-coloring of G is a nonnegative real-valued function f : V → [0,1,…,k] such that whenever vertices x and y are adjacent in G then |f(x)-f(y)|≥ 2 and whenever the distance between x and y is 2, |f(x)-f(y)|≥ 1. For a given L(2,1)-coloring c of graph G, the c-span is λ(c) = max{|c(v)-c(v)||u,v∈V}. L(2,1)-coloring number λ(G) = min{λ(c)} where the minimum is taken over all L(2,1)-coloring c of graph G. In this paper, based on Harary's Theorem, we use Tabu Search to figure out the existence of Hamiltonian Path in a complementary graph and confirmed that if λ(G) is equal to n(=|V|).

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Kyungpook Mathematical Journal
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• v.48 no.2
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• pp.287-302
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• 2008

The vertex set of a digraph D is denoted by V (D). A c-partite tournament is an orientation of a complete c-partite graph. A digraph D is called cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that V(D) = $V(C_1)\;{\cup}\;V(C_2)$, and a multipartite tournament D is called weakly cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that $V(C_1)\;{\cup}\;V(C_2)$ contains vertices of all partite sets of D. The problem of complementary cycles in 2-connected tournaments was completely solved by Reid [4] in 1985 and Z. Song [5] in 1993. They proved that every 2-connected tournament T on at least 8 vertices has complementary cycles of length t and ${\mid}V(T)\mid$ - t for all $3\;{\leq}\;t\;{\leq}\;{\mid}V(T)\mid/2$. Recently, Volkmann [8] proved that each regular multipartite tournament D of order ${\mid}V(D)\mid\;\geq\;8$ is cycle complementary. In this article, we analyze multipartite tournaments that are weakly cycle complementary. Especially, we will characterize all 3-connected c-partite tournaments with $c\;\geq\;3$ that are weakly cycle complementary.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.321-324
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• 2018

Recently, the evolution of V2X (Vehicle to Everything) technology is accelerating. In particular, it can be seen that C-V2X (Cellular V2X) technology and services combined with mobile telecommunication network are developing rapidly. However, in Korea, e-Call and emergency communication services are inferior to the developed communication technologies and the proportion of vehicles arriving at Golden Hour is considerably low. Therefore, this paper designed the communication architecture with C-V2X and Android operating systems, and presented ways to improve existing e-Call services using V2N (Vehicle to Nomadic Device) communication based on it.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.313-318
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• 2013

In order to investigate the effect of $V_2O_5$ loading of $V_2O_5-WO_3/TiO_2$ catalyst on the NO reduction and the formation of $N_2O$, the experimental study was carried out in a differential reactor using the powder catalyst. The NO reduction and the ammonia oxidation were, respectively, investigated over the catalysts compose of $V_2O_5$ content (1~8 wt%) based on the fixed composition of $WO_3$ (9 wt%) on $TiO_2$ powder. $V_2O_5-WO_3/TiO_2$ catalysts had the NO reduction activity even under the temperature of $200^{\circ}C$. However, the lowest temperature for NO reduction activity more than 99.9% to treat NO concentration of 700 ppm appeared at 340 with very limited temperature window in the case of 1 wt% $V_2O_5$ catalyst. And the temperature shifted to lower one as well as the temperature window was widen as the $V_2O_5$ content of the catalyst increased, and finally reached at the activation temperature ranged $220{\sim}340^{\circ}C$ in the case of 6 wt% $V_2O_5$ catalyst. The catalyst of 8 wt% $V_2O_5$ content presented lower activity than that of 8 wt% $V_2O_5$ content over the full temperature range. NO reduction activity decreased as the $V_2O_5$ content of the catalyst increased above $340^{\circ}C$. The active site for NO reduction over $V_2O_5-WO_3/TiO_2$ catalysts was mainly related with $V_2O_5$ particles sustained as the bare surface with relevant size which should be not so large to stimulate $N_2O$ formation at high temperature over $320^{\circ}C$ according to the ammonia oxidation. Currently, $V_2O_5-WO_3/TiO_2$ catalysts were operated in the temperature ranged $350{\sim}450^{\circ}C$ to treat NOx in the effluent gas of industrial plants. However, in order to save the energy and to reduce the secondary pollutant $N_2O$ in the high temperature process, the using of $V_2O_5-WO_3/TiO_2$ catalyst of content $V_2O_5$ was recommended as the low temperature catalyst which was suitable for low temperature operation ranged $250{\sim}320^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• The Korean Journal of Physiology and Pharmacology
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• v.16 no.5
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• pp.339-342
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• 2012

Inter-individual pharmacokinetic variation of H2-receptor antagonist is related to genetic polymorphism of CYP2C19. We investigated the frequency of CYP2C19 genetic polymorphism and the treatment duration of cimetidine by CYP2C19 genotypes in functional dyspeptic patients without definite causes who were treated with cimetidine in Korea. One hundred subjects with functional dyspepsia participated in this study from March 1, 2010 to June 30, 2011. They were tested by upper gastrointestinal endoscopy and treated for their dyspepsia with cimetidine. The single nucleotide polymorphisms (SNPs) of CYP2C19 were genotyped using the Seeplex CYP2C19 ACE Genotyping system. There were no significant differences in the demographic, clinical, or laboratory findings among the CYP2C19 subgroups which are wild type homozygote (W/W), heterozygote (W/V), and variant homozygote (V/V). The frequencies of CYP2C19 subgroups were 33 (33%) in W/W, 49 (49%) in W/V, and 18 (18%) in V/V, respectively. The mean duration of cimetidine treatment (in weeks) was the shortest in the V/V among the CYP2C19 genotypes (W/W: $5.1{\pm}1.5$, W/V: $4.0{\pm}1.7$, V/V: $2.1{\pm}0.7$; p<0.001). This study can also act as a basis for further investigation to identify the underlying genetic, epigenetic, or environmental factors in CYP2C19 enzyme activity.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Parasites, Hosts and Diseases
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• v.22 no.1
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• pp.11-20
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• 1984

A number of studies on the papillae of cercariae of trematodes reported that the papillar patterns (or chaetotaxy) of cercariae might be an excellent method to attain better understanding of the digenetic trematodes (Richard, 1971 ; Short and Cartrett, 1973; Bayssade-Dufour, 1979) . The present study was aimed to determine the number, distribution pattern and structure of the sensory papillae of Metagonimus yokogawai cercariae, and to elucidate the chaetotaxy of this digenetic trematode. M. yokogawai cercariae were pipetted from a vial in which infected snails (Semisulcospira libertina) had been kept for 3 hours. The snails were collected from an endemic area of M. yokogawai, Boseong river in west-southern part of Korea. Observations of papillae were based on light microscopy of those stained with silver nitrate, and on scanning electron microscopy The results are summarized as follows: 1, All papillae observed were uniciliated. 2. Cilia in anterior tip were shorter than the others in other portions. 3. The body papillae were arranged in essentially symmetrical patterns, Total number of the papillae was 126(63 pairs) in average; anterior tip 40(20 pairs), ventral 20(10 pairs), lateral 42(21 pairs), and caudal 8(4 pairs). 4. The chaetotany of M. yokogawai cercaria was: Ci cycle ($3+3C_{I}V,{\;}2+2C_{I}L,{\;}2+3C_{I}D),{\;}C_{II}{\;}cycle(2C_{II}V,{\;}1C_{II}L,{\;}2C_{II}D),{\;}C_{lll}{\;}cycle{\;}(1+lC_{III}V,{\;}1C_{IlI}L),{\;}C_{IV}{\;}cycle{\;}(1C_{IV}V,{\;}IC_{lV}L){\;}in{\;}cephalic{\;}region:{\;}A_I(1A_{IV}V,{\;}1+2A_{I}L,{\;}1A_{I}D),{\;}A_{II}(1A_{II}V,{\;}1+3A_{II}L,{\;}1A_{II}D),{\;}A_{III}(1A_{III}V,{\;}1+1A_{III}L,{\;}1A_{III}D){\;}and{\;}A_{IV}(1A_{IV}V,{\;}2A_{IV}L)$ in antacetabular region: $1M_{I}V{\;}and{\;}2M_{I}L$ in median: $1+1P_{I}L,{\;}1P_{II}L,{\;}1P_{II}D,{\;}1P_{III}L,{\;}1P_{IV}L{\;}and{\;}1P_{IV}D$ in postacetabular region: 2-2-2-2 in caudal region.