• Title/Summary/Keyword: V2B

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Formation of Multi-Component Boride Coatings Containing V and/or Cr and Evaluation of Their Properties (바나듐 및 크롬을 포함하는 다 성분 Boride 코팅의 생성 및 특성 평가)

  • Lee, Euiyeol;Yoon, Sanghyun;Kim, Jongha
    • Journal of the Korean institute of surface engineering
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    • v.49 no.2
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    • pp.211-217
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    • 2016
  • Boride coating applied on steam turbine parts of power plants has provided good particle erosion resistance under temperature of $550^{\circ}C$, but it isn't able to protect the parts effectively any more in ultra super critical (USC) steam turbine which is being operated up to temperature of $650^{\circ}C$. To ensure stable durability for USC steam turbine parts, an alternative coating replacing boride coating should be developed. In this study, multi-component boride coatings containing elements such as chromium (Cr) and vanadium (V) were formed on base metal (B50A365B) using thermochemical treatment method called by pack cementation. The thermochemical treatments involve consecutive diffusion of boron(B) and Cr or/and V using pack powders containing diffusion element sources, activators and diluents. The top layer of Cr-boride coating is primarily consisted of $Cr_2B_3$ and $Cr_5B_3$, while that of V-boride coating is mostly consisted of $VB_2$ and $V_2B_3$. The (Cr,V)-boride coating is consisted of $Cr_2B_3$, $Cr_5B_3$ and $V_2B_3$ mostly. The top surfaces of 3 multi-component boride coatings show hardness of $3200-3400H_v$, which is much higher than that of boride, about $1600-2000H_v$. In 5 wt.% NaCl solution immersion tests, the multi-component boride coatings show much better corrosion resistance than boride coating.

Hydrogen separation of $V_{99.8}B_{0.2}$ Alloy Membrane in Water-gas shift Reaction (수성 가스 전이반응에서 $V_{99.8}B_{0.2}$ 합금 분리막의 수소분리)

  • Jeon, Sung-Il;Jung, Yeong-Min;Park, Jung-Hoon;Lee, Yong-Taek
    • Membrane Journal
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    • v.22 no.1
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    • pp.16-22
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    • 2012
  • The influence of co-existing gases on the hydrogen permeation without sweep gas was studied through a Pd-coated $V_{99.8}B_{0.2}$ alloy membrane. Membranes have been investigated in the pressure range 1.5-8.0 bar under pure hydrogen, hydrogen-carbon dioxide and hydrogen-carbon monoxide gas mixture without sweep gas at $400^{\circ}C$. Preliminary hydrogen permeation experiments without sweep gas have been confirmed that hydrogen flux was $40.7mL/min/cm^2$ for a Pd-coated $V_{99.8}B_{0.2}$ alloy membrane (thick : 0.5 mm) using pure hydrogen as the feed gas. In addition, hydrogen flux was $21.4mL/min/cm^2$ for $V_{99.8}B_{0.2}$ alloy membrane using $H_2/CO_2$ as the feed gas. The hydrogen permeation flux decreased with decrease of hydrogen partial pressure irrespective of pressure when $H_2/CO_2$and $H_2/CO$mixture applied as feed gas respectively and permeation fluxes were satisfied with Sievert's law in different feed conditions. It was found from XRD, SEM/EDX results after permeation test that the Pd-coated $V_{99.8}B_{0.2}$ alloy membrane had good stability and durability for various mixtures feeding condition.

EXISTENCE AND CONCENTRATION RESULTS FOR KIRCHHOFF-TYPE SCHRÖ DINGER SYSTEMS WITH STEEP POTENTIAL WELL

  • Lu, Dengfeng
    • Bulletin of the Korean Mathematical Society
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    • v.52 no.2
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    • pp.661-677
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    • 2015
  • In this paper, we consider the following Kirchhoff-type Schr$\ddot{o}$dinger system $$\{-\(a_1+b_1{\int}_{\mathbb{R^3}}{\mid}{\nabla}u{\mid}^2dx\){\Delta}u+{\gamma}V(x)u=\frac{2{\alpha}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha-2}u{\mid}v{\mid}^{\beta}\;in\;\mathbb{R}^3,\\-\(a_2+b_2{\int}_{\mathbb{R^3}}{\mid}{\nabla}v{\mid}^2dx\){\Delta}v+{\gamma}W(x)v=\frac{2{\beta}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha}{\mid}v{\mid}^{\beta-2}v\;in\;\mathbb{R}^3,\\u,v{\in}H^1(\mathbb{R}^3),$$ where $a_i$ and $b_i$ are positive constants for i = 1, 2, ${\gamma}$ > 0 is a parameter, V (x) and W(x) are nonnegative continuous potential functions. By applying the Nehari manifold method and the concentration-compactness principle, we obtain the existence and concentration of ground state solutions when the parameter ${\gamma}$ is sufficiently large.

Applications and Impact of V2G Technology for Electric Vehicle and Charging Infrastructure (전기자동차와 충전기반시설의 V2G 기술 활용과 영향에 관한 연구)

  • Lee, Sunguk;Park, Byungjoo
    • The Journal of the Convergence on Culture Technology
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    • v.5 no.2
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    • pp.367-373
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    • 2019
  • As the number of Battery Electric Vehicle (BEV) is increasing dramatically Vehicle-to-Grid (V2G) te chnology also has been spotlight from industry and academia recently. With help of V2G technology Battery of EV can play many important roles like as energy storage system (ESS) and electric energy resource in Smart Grid environment. This paper provides comprehensive review of Vehicle-to-Home(V2H), Vehicle-to-Building(V2B) and Vehicle-to-Grid(V2G) technologies. The economical analysis of these technologies is also discussed.

A Study on the Channeling Effect of Ultra Low Energy B, P and As Ion Implant to Form Ultra-Shallow Junction of Semiconductor Device (초미세 접합형성을 위한 극 저 에너지 B, P 및 As 이온주입시 채널링 현상에 관한연구)

  • 강정원;황호정
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.27-33
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    • 1999
  • We have investigated the ultra-low energy B, P, and As ion implantation using upgraded MDRANGE code to study formation of nanometer junction depths. Even at the ultra-low energies simulated in this paper, it was revealed that ion channeling should be carefully considered. It was estimated that ion channelings have much effect on dopant profiles when B ion implant energies were more than 500 eV, P more than 2 keV and As approximately more than 4 keV. When we compared 2-dimensional dopant profiles of 1 keV B with that of tilted one, 2 keV P with tilt, and 5 keV As with tilt, we could find that most channeling cases occurred not lateral directions but depth directions.

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Evidence for VH Gene Replacement in Human Fetal B Cells

  • Lee, Jisoo;Cho, Young Joo;Lipsky, Peter E.
    • IMMUNE NETWORK
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    • v.2 no.2
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    • pp.79-85
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    • 2002
  • Background: In contrast to evidences of Ig H chain receptor editing in transformed cell lines and transgenic mouse models, there has been no direct evidence that this phenomenon occurs in human developing B cells. Methods: $V_HDJ_H$ rearrangements were obtained from genomic DNA of individual $IgM^-$ B cells from liver and $IgM^+B$ cells from bone marrow of 18 wk of gestation human fetus by PCR amplification and direct sequencing. Results: We found three examples of H chain receptor editing from $IgM^+$ and $IgM^-human$ fetal B cells. Two types of $V_H$ replacements were identified. The first involved $V_H$ hybrid formation, in which part of a $V_H$ gene from the initial VDJ rearrangement is replaced by part of an upstream $V_H$ gene at the site of cryptic RSS. The second involved a gene conversion like replacement of CDR2, in which another $V_H$ gene donated a portion of its CDR2 sequence to the initial VDJ rearrangement. Conclusion: These data provide evidence of receptor editing at the H chain loci in developing human B cells, and also the first evidence of a gene conversion event in human Ig genes.

A Variable-Gain Low-Voltage LNA MMIC Based on Control of Feedback Resistance for Wireless LAN Applications (피드백 저항 제어에 의한 무선랜용 가변이득 저전압구동 저잡음 증폭기 MMIC)

  • Kim Keun Hwan;Yoon Kyung Sik;Hwang In Gab
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.10A
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    • pp.1223-1229
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    • 2004
  • A variable-gain low-voltage low noise amplifier MMIC operating at 5GHz frequency band is designed and implemented using the ETRI 0.5$\mu\textrm{m}$ GaAs MESFET library process. This low noise amplifier is designed to have the variable gain for adaptive antenna array combined in HIPERLAN/2. The feedback circuit of a resistor and channel resistance controlled by the gate voltage of enhancement MESFET is proposed for the variable-gain low noise amplifier consisted of cascaded two stages. The fabricated variable gain amplifier exhibits 5.5GHz center frequency, 14.7dB small signal gain, 10.6dB input return loss, 10.7dB output return loss, 14.4dB variable gain, and 2.98dB noise figure at V$\_$DD/=1.5V, V$\_$GGl/=0.4V, and V$\_$GG2/=0.5V. This low noise amplifier also shows-19.7dBm input PldB, -10dBm IIP3, 52.6dB SFDR, and 9.5mW power consumption.

A 2.5V 80dB 360MHz CMOS Variable Gain Amplifier (2.5V 80dB 360MHz CMOS 가변이득 증폭기)

  • 권덕기;박종태;유종근
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.983-986
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    • 2003
  • This paper describes a 2.5V 80dB 360MHz CMOS VGA. A new variable degeneration resistor is proposed where the dc voltage drop over the degeneration resistor is minimized and employed in designing a low-voltage and high-speed CMOS VGA. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than 1.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$$\times$360${\mu}{\textrm}{m}$.

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Experimental Study on the Expression of Hair Growth Related Factors after Bee Venom Acupuncture Therapy (봉독약침요법(蜂毒藥鍼療法)에 의한 발모관련 인자들의 발현에 대한 연구)

  • Kim, Ho-Il;Kim, Cheong-Moo;Shin, Hyun-Jong;Lee, Chang-Hyun
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.25 no.3
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    • pp.496-502
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    • 2011
  • The present study was undertaken to investigate the effect of bee venom acupuncture therapy on the hair follicle growth by macroscopic, microscopic and immunohistochemical observation of skin 10 and 17 days after treatment. The results were as follows : Macroscopic hair follicle growth of 0.2 ml S.B.V. acupuncture treated group was more prominent than those of 0.1 ml S.B.V. acupuncture treated group and control group. Microscopic observation indicated that the hair follicle growth of control group reached anagen phase IV of hair growing cycle, and that of 0.1 ml and 0.2 ml S.B.V. acupuncture treated groups reached anagen phase VI and catagen, respectively. Immunohistochemical observations of the expression of various cytokines, enzymes and receptors in association with hair follicle cycle after local treatment of S.B.V. acupuncture therapy are as follows: Expression of fibroblast growth factor was more intense in epidermis and outer root sheath in 0.2 ml S.B.V. acupuncture treated group than that of 0.1 ml S.B.V. acupuncture treated group and control group. Expression of epidermal growth factor was more intense in bulge and outer root sheath in 0.2 ml S.B.V. acupuncture treated group than that of 0.1 ml S.B.V. acupuncture treated group and control group. Expression of c-kit receptor was more intense in epidermis, bulge and outer root sheath in 0.2 ml S.B.V. acupuncture treated group than that of control group. Expression of vascular endothelial growth factor was more intense in epidermis, bulge and outer root sheath in 0.2 ml S.B.V. acupuncture treated group than that of control group. Expression of protein kinase C-${\alpha}$ was more intense in epidermis, bulge and outer root sheath in 0.2 ml S.B.V. acupuncture treated group than control group. It is concluded that bee venom acupuncture therapy promoted the expression of various cytokines, enzymes and receptors related to the hair growth cycle for hair growth. This findings indicates that bee venom acupuncture therapy is applicable to the treatment of hair loss.

BINDING NUMBER AND HAMILTONIAN (g, f)-FACTORS IN GRAPHS

  • Cai, Jiansheng;Liu, Guizhen
    • Journal of applied mathematics & informatics
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    • v.25 no.1_2
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    • pp.383-388
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    • 2007
  • A (g, f)-factor F of a graph G is Called a Hamiltonian (g, f)-factor if F contains a Hamiltonian cycle. The binding number of G is defined by $bind(G)\;=\;{min}\;\{\;{\frac{{\mid}N_GX{\mid}}{{\mid}X{\mid}}}\;{\mid}\;{\emptyset}\;{\neq}\;X\;{\subset}\;V(G)},\;{N_G(X)\;{\neq}\;V(G)}\;\}$. Let G be a connected graph, and let a and b be integers such that $4\;{\leq}\;a\;<\;b$. Let g, f be positive integer-valued functions defined on V(G) such that $a\;{\leq}\;g(x)\;<\;f(x)\;{\leq}\;b$ for every $x\;{\in}\;V(G)$. In this paper, it is proved that if $bind(G)\;{\geq}\;{\frac{(a+b-5)(n-1)}{(a-2)n-3(a+b-5)},}\;{\nu}(G)\;{\geq}\;{\frac{(a+b-5)^2}{a-2}}$ and for any nonempty independent subset X of V(G), ${\mid}\;N_{G}(X)\;{\mid}\;{\geq}\;{\frac{(b-3)n+(2a+2b-9){\mid}X{\mid}}{a+b-5}}$, then G has a Hamiltonian (g, f)-factor.