• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.26-33
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• 1994

Adsorption isotherms of nitrogen and argon on various adsorbents measured up to present by authors are used to make the V-t plots using various numerical and the analytical standard adsorption isotherms to estimate the appropriateness of these standard isotherms. It is confirmed that the analytical FHH equation is appropriate for wide range of adsorbents as a standard isotherm.

• Journal of Internet of Things and Convergence
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• v.6 no.2
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• pp.25-29
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• 2020

The elliptic curve crypto-algorithm is widely used in authentication for IoT environment, since it has small key size and low communication overhead compare to the RSA public key algorithm. If the scalar multiplication, a core operation of the elliptic curve crypto-algorithm, is not implemented securely, attackers can find the secret key to use simple power analysis or differential power analysis. In this paper, an elliptic curve scalar multiplication algorithm using a randomized scalar and an elliptic curve point blinding is suggested. It is resistant to power analysis but does not significantly reduce efficiency. Given a random r and an elliptic curve random point R, the elliptic scalar multiplication kP = u(P+R)-vR is calculated by using the regular variant Shamir's double ladder algorithm, where l+20-bit u≡rn+k(modn) and v≡rn-k(modn) using 2^lP=∓cP for the case of the order n=2^l±c.

• Journal of the Korea Computer Graphics Society
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• v.10 no.3
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• pp.28-33
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• 2004

본 논문에서는 자유곡면 간의 교차곡선이 갖는 위상 구조를 분석하는 방법을 제시하며, 또한 이를 이용하여 교차곡선을 효율적이고 안정적으로 계산하는 알고리즘을 제안한다. 자유곡면 간의 교차곡선 계산은 현재까지 난문제로 알려져 있으며, 그러한 가장 큰 원인 중의 하나로서 교차곡선의 위상 구조를 분석하기 어렵다는 점을 들 수 있다. 본 논문에서는 입력으로 주어지는 자유곡면 중의 하나가 매개변수 곡면 F(u, v) 이라는 가정 하에 음함수 곡면 g(x, y, z) = 0 과의 교차곡선, 그리고 또 다른 매개변수 곡면 G(s, t)와의 교차곡선 계산방법을 제시한다. 교차곡선은 uv-평면 상의 평면 곡선으로 고려되며, 이 평면곡선에서 u-방향에 대한 극점(critical point)을 먼저 계산한 뒤 이를 이용하여 위상구조를 분석한다. 또한, 분석된 위상구조를 기반으로 전체 교차곡선을 추적(tracing)하는 알고리즘을 제시한다.

• International Journal of Highway Engineering
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• v.8 no.4 s.30
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• pp.63-74
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• 2006

It's essential to meet the expectations of drivers through reasonable road design, which makes the drivers to recognize the conditions of road sufficiently. In this case, we could say that because the roads are consistently designed, drivers can make a safe and comfortable drive. There are so many studies about the alignment design consistency methods which are previously mentioned. In this study, Firstly we categorize the studies which are concerned with the estimation of the alignment design consistency methods and then apply the method which fits for the actual condition into the practice. And we'll make a realistic method by using the data which aye collected from the National Road. The developed model in this study is the predicting model including speed($V_t$) as the variable on the upper stream 100m of the curve. This model was developed which divided to two cases in the all directions of two lanes; One case is the $R{\leq}200m$ and another case is the R>200m. In the section of the $R{\leq}200m$, this case was influenced on the road alignment(R) and($V_t$) and another section was found that is affected to the speed($V_t$) on the upper stream loom rather than the effect of road alignment(R). In the case of all directions of four lanes, however, this study is predicted divided to two sections on the 400m of R, these section have more influenced to($V_t$) than the road alignment factors. This result of the four lanes was represented to different result with the two lanes. This study will further need development of the predicting model with the higher confidence through collecting data with more the exact data, the various road alignment data and speed of the several sections on the upper stream on the curve.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.1-10
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• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Economic and Environmental Geology
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• v.5 no.2
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• pp.77-86
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• 1972

The system NaAlSiO_4-KAlSiO_4-SiO_2-H_2O, Bowen's "Petrogeny's Residua System" of course is extremely important in understanding the phase relationships of igneous and metamorphic rock in the continental crust. The phase relationships in this system, however, have not been completely established in the P-T range above the Mohorovicic discontinuity. They need to be established. In this study, the most probable sequence of P-T curves around a quaternary invariant point(~5Kb/${\sim}635^{\circ}C$) in the system using Schreinemakers' rule, is deduced, essentially on the basis of Morse's(1969a and b) experimental data. Possible modifications of the sequence of the P-T curves considering likely changes of the invariant chemogram are also considered. It is concluded that the sequence of P-T curves around the invariant point (~5Kb/${\sim}635^{\circ}C$) is (L), (Anl), (Or), (V), (Ne) and (Ab) on the P-T projection, where the P-T curve (L) is extended towards lower P-T regions, and the (Anl) curve is extended towards a region of higher temperature and lower pressure from the invariant point respectively.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.234-235
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• 2013

PV cell model은 PV simulator를 제작하거나 시뮬레이션 Software를 통하여 PV 발전시스템을 분석하기 위하여 필요하다. PV cell의 I-V 특성곡선은 PV cell의 특성을 결정짓는 중요한 요소이며, 전기적으로 다이오드정수($I_o$, $v_t$)와 광전류원($I_{ph}$) 그리고 직렬저항($R_s$) 및 션트저항($R_{sh}$)으로 모델링 가능하다. 광 전류원은 일사량에 비례하여 그 값을 추정할 수 있으나 나머지 변수인 다이오드정수($I_o$, $v_t$)와 직렬저항($R_s$) 및 션트저항($R_{sh}$)은 제조사 데이터시트에서 제공하는 3개의 대표적인 운전점인 개방회로 전압($V_{oc}$), 단락회로 전류($I_{sc}$), 그리고 최대출력에서의 전압/전류($V_{MPP}/I_{MPP}$)를 기초로 수학적으로 해를 구하여야만 한다. 본 논문에서는 저자가 제안하는 K-알고리즘의 수학적 도출 과정과 수치해석적 특성을 고찰한다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.899-900
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• 2009

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.11
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• pp.2860-2870
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• 1994

When crack are detected in aged turbine rotors of power plants, information on fracture resistance of the aged material at operating temperature is needed for determination of critical loading condition and residual life of the turbine. In this study, fracture toughness (J$_lc$) and tearing modulus(T$_mat$) of virgin and thermally degraded 1Cr-1Mo-0.25V steel, which is one of the most widely used rotor steels, were measured at 538.deg. C according to ASTM E813 and ASTM E1152, respectively. Five kinds of specimen with different degradation levels were prepared by isothermal aging heat treatment at $630^{\circ}C.$ It was observed that J$_lc$ and T$_mat$ value decreased as the degradation level increased. Analysis of microstructures using a scanning electron microscope showed that the decrement of J$_lc$ is related to segregation of impurities at grain boundaries. It was also verified that the DC electric potential drop method is accurate and reliable for crack length monitoring at elevated temperature.