• Journal of the Optical Society of Korea
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• 제19권2호
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• pp.136-143
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• 2015

Image deblurring by a deconvolution method requires accurate knowledge of the blur kernel. Existing point spread function (PSF) models in the literature corresponding to lens aberrations and defocus are either parameterized and spatially invariant or spatially varying but discretely defined. In this paper, a parameterized model is developed and presented for a PSF which is spatially varying due to lens aberrations and defocus in an imaging system. The model is established from the Seidel third-order aberration coefficient and the Hu moment. A skew normal Gauss model is selected for parameterized PSF geometry structure. The accuracy of the model is demonstrated with simulations and measurements for a defocused infrared camera and a single spherical lens digital camera. Compared with optical software Code V, the visual results of two optical systems validate our analysis and proposed method in size, shape and direction. Quantitative evaluation results reveal the excellent accuracy of the blur kernel model.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• 한국기계가공학회지
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• 제18권10호
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• pp.83-92
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• 2019

A pump is considered to be submersible when a motor and a pump are integrated and operate while submerged in water. Submersible pumps mainly function as rejection pumps to prevent foods in densely populated areas, as cold water circulation pumps in large power plants, as pumps to supply irrigation water, as drainage pumps to prevent flooding of agricultural lands, as water supply intake pumps, and as inflow pumps for sewage treatment. The flow in such turbomachines (submersible pumps) inevitably involves various eddy currents. Since it is almost impossible to accurately grasp the complex three-dimensional flow structure and characteristics of a rotating turbomachine through actual testing, three-dimensional numerical analysis using computational fluid dynamics techniques measuring the flow field, velocity, and the pressure can be accurately predicted. In this study, the shape of the impeller was developed to reduce vibration and noise. This was done by increasing the efficiency of the existing submersible pump and reducing turbulence. In order to evaluate the pump's efficiency and turbulence reduction, we tried to analyze the flow using ANSYS Fluent V15.0, a commercial finite element analysis program. The results show that the efficiency of the pump was improved by 4.24% and the Reynolds number was reduced by 15.6%. The performance of a developed pump with reduced turbulence, vibration, and noise was confirmed.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제15권10호
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• pp.3708-3728
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• 2021

Indian herbal plants are used in agriculture and in the food, cosmetics, and pharmaceutical industries. Laboratory-based tests are routinely used to identify and classify similar herb species by analyzing their internal cell structures. In this paper, we have applied computer vision techniques to do the same. The original leaf image was preprocessed using the Chan-Vese active contour segmentation algorithm to efface the background from the image by setting the contraction bias as (v) -1 and smoothing factor (µ) as 0.5, and bringing the initial contour close to the image boundary. Thereafter the segmented grayscale image was fed to a leaky capacitance fired neuron model (LCFN), which differentiates between similar herbs by combining different groups of pixels in the leaf image. The LFCN's decay constant (f), decay constant (g) and threshold (h) parameters were empirically assigned as 0.7, 0.6 and h=18 to generate the 1D feature vector. The LCFN time sequence identified the internal leaf structure at different iterations. Our proposed framework was tested against newly collected herbal species of natural images, geometrically variant images in terms of size, orientation and position. The 1D sequence and shape features of aloe, betel, Indian borage, bittergourd, grape, insulin herb, guava, mango, nilavembu, nithiyakalyani, sweet basil and pomegranate were fed into the 5-fold Bayesian regularization neural network (BRNN), K-nearest neighbors (KNN), support vector machine (SVM), and ensemble classifier to obtain the highest classification accuracy of 91.19%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 한국진공학회지
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• 제22권5호
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• pp.250-256
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• 2013

양전자 소멸 분광법으로 발광 박막 시료에 3.0 MeV 에너지를 가진 양성자 빔을 $0.0{\sim}20.0{\times}10^{13}$ protons/$cm^2$의 조사에 의해 생성된 결함을 측정하여 박막구조 특성에 대하여 실험하였다. 동시 계수 도플러 넓어짐 양전자 소멸법 스펙트럼의 수리적 해석 방법인 S-변수를 사용하고, 양전자 수명 측정 방법에 의한 양전자 수명 ${\tau}_1$과 ${\tau}_2$, 이에 따른 세기 $I_1$과 $I_2$를 사용하여, 박막구조에 대한 결함 특성 변화를 측정하였다. 측정된 S-변수는 박막에 조사된 양성자의 빔 조사량에 따라 양성자가 빈자리에 포획되어 감소하는 값을 보였다. 양전자 수명 ${\tau}_1$은 증가하고, ${\tau}_2$은 일정한 값을 나타내었으나, 반면에 세기 $I_1$과 $I_2$는 큰 변화가 없었다. 그 이유는 양성자 조사 빔의 변화에 따라서 단일 빈자리의 크기는 증가하고, 다 결정체 알갱이 빈자리 때문에 양성자에 의한 다수의 빈자리 결함의 양은 큰 차이가 없기 때문이다. 그리고 Bragg 피크로 인하여 박막 시료의 특정 깊이에 결함을 형성하여 박막 전체의 결함으로 잘 나타나지 않기 때문으로 판단된다.

• 한국산학기술학회논문지
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• 제18권2호
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• pp.349-355
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• 2017

프레스금형(press dies)에 의한 굽힘가공(bending work) 이라는 것은 평평한 블랭크(blank)를 필요로 하는 각도(角度)로 굽히는 것이다. 굽힘가공을 하면 굽혀진부분(flange)과 굽혀지지 않은 부분(web)으로 구분되며, 굽힘라인(bending line) 부분에는 굽혀진 각도(bending angle)와 굽힘반지름(bending radius)이 내측과 외측으로 성형된다. 이때, 내측 굽힘반지름의 크기는 제품의 재질별로 최소치수가 제시 된다. 제시된 최소치수 보다 작게 굽히면 절단면 굽힘부위에 덧살이 발생 하거나 외측 굽힘반지름 부위에는 균열(crack)이 생긴다. 굽힘가공에서의 외측 굽힘반지름은 자연적으로 생긴다. 그래서 외측 굽힘반지름 치수를 굽힘펀치와 다이블록으로 조정하면서 필요한 치수로 굽힐수 없다. 굽힘가공에는 V-굽힘, U-굽힘, Z-굽힘, O-굽힘, P-굽힘, 에지굽힘(edge bending), 트위스트굽힘(twist bending), 크림핑(crimping) 등이 있다.이 중에서 Z-굽힘은 굽힘라인이 2개로써 블랭크의 상면(上面)과 하면(下面)에 설정하여 상향(上向)굽힘이나 하향(下向)굽힘으로 작동되는 금형을 사용한다. Z-굽힘을 크랭크굽힘(crank bending) 이라고도 한다. 이런 구조의 금형으로 Z-굽힘가공을 하면 내측반지름은 표준치수로 굽혀진다. 표준치수라는 것은 굽힘가공에서 굽힐 수 있는 최소 굽힘반지름 치수로서 굽힘펀치의 각(角)반지름(Rp)를 뜻한다. 그런데 산업현장에서는 외측 굽힘반지름 치수를 굽힘펀치와 다이블록으로 굽힐수 없는 미세한 샤프에지(sharp edge) 형상인 매우 작은 치수(R=0.2mm)를 필요로하고 있는 바, 본 논문에서는 외측 굽힘반지름 치수를 0.2mm 이하로 굽힐수 있는 Z-굽힘가공 공법을 개발 하고자 하였다.

• 마이크로전자및패키징학회지
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• 제18권2호
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• pp.57-62
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• 2011

염료 감응 태양 전지(Dye-Sensitized Solar Cells: DSSCs)의 에너지 변환효율은 $TiO_2$ 전극의 입자 크기, 구조 및 표면 형태에 의존한다. 높은 비표면적을 갖는 나노 크기의 아나타제 $TiO_2$는 많은 염료를 흡착할 수 있어 변환효율을 증가 시킨다. 또한 전극 내부에서 태양광의 산란을 증가 시키면, 염료가 태양광을 흡수하는 양이 증가하여 효율이 증가할 수 있다. 수열 합성법으로 합성한 $TiO_2$ 분말의 크기는 15-25 nm이고, 결정상은 구형의 anatase 상이다. 0.4 ${\mu}m$의 $TiO_2$ 산란입자를 합성한 나노 크기의 $TiO_2$ 분말에 혼합하여 전극을 제조하고, DSSCs를 제작한 후 변환효율을 측정하였다. 10% 의 산란 입자가 포함된 DSSCs는 단락전류 3.51 mA, 개방전압 0.79 V, 곡선인자 0.619로 6.86%의 변환 효율을 나타 내었다. 산란 입자의 영향으로 단락전류밀도는 11% 증가하였고, 효율은 0.77% 증가하였다. 산란 입자가 포함되지 않은 DSSCs 보다 산란 입자가 전극으로 들어온 태양광을 산란시켜 전자-홀 쌍의 생성을 증가 시키고, 전자가 전극을 따라 이동하는 경로가 감소하여 효율이 증가하였다. 10% 이상의 산란 입자는 전극 내부에 입자 크기의 큰 기공을 증가 시켜 효율이 감소하였다.

• 전기화학회지
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• 제11권4호
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• pp.268-272
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• 2008

본 연구에서는 $LiFePO_4$의 입자크기를 조절함으로써 우수한 전극특성을 나타낼 수 있도록 최적의 입자크기($50{\sim}100\;nm$)를 가지는 $LiFePO_4$ 양극 활물질을 전기방사법을 이용하여 합성하였다. XRD 분석결과 FeP, $Fe_2P$ 등의 불순물이 존재하지 않는 Pnma의 공간군을 가지는 잘 발달된 사방정 구조의 $LiFePO_4$가 합성됨을 확인하였으며, SEM 분석을 통하여 시료의 입자형태 및 크기를 관찰하였다. $0.1\;mA/cm^2$의 전류밀도와 $2.8{\sim}4.0\;V$의 전위영역에서 충 방전 테스트 수행시 135 mAh/g의 초기 방전용량을 나타내었으며, 50 싸이클 후에도 99.9% 이상의 용량 보존율을 보이는 우수한 싸이클 특성을 나타내었다.

• 한국균학회지
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• 제18권4호
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• pp.203-208
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• 1990

고추 역병균(疫病菌) 유성세대(有性世代)인 난포자(卵胞子)는 원형(円形)이며 막(膜)이 두텁고 크기는 $24.4\;{\mu}m$$(20{\sim}32.5{\mu}m)$ 이며 장난기(藏卵器)는 $26.7\;{\mu}m$$(21{\sim}37.5{\mu}m)$이고 장정기(藏精器)는 도우낫모양으로 크기는 $6.5{\times}4\;{\mu}m(6{\sim}8{\times}5{\sim}6\;{\mu}m)$이었다. 난포자(卵胞子)의 형성단계(形成段階)는 접종(接種) 직후(直後) 각(各) 배우자형(配偶者型)의 균사(菌絲)가 신전(伸展)되어 접촉(接觸)되고 확장기(擴張期)로 이어지면서 완숙난포자(完熟卵胞子)로 되기까지 사단계(四段階)로 구분(區分)되었다. 난포자(卵胞子) 형성(形成)에 최적온도(最適溫度)는 $20{\sim}24^{\circ}C$이었고 온도(溫度)가 $25^{\circ}C$ 이상되면 오히려 감소(減少)하는 경향(傾向)이었다. 새로운 호박배지는 기존(旣存) V-8 한천배지(寒天培地)보다 많은 난포자(卵胞子) 형성(形成)을 보였으나 고추잎배지(培地)에서는 난포자(卵胞子)가 형성(形成)되지 않았다. $1800{\pm}300$ 및 $800{\pm}300$ Lux의 주야(晝夜) 광조사(光照射)는 암조건(暗條件)보다 오히려 난포자(卵胞子) 형성(形成)에 저해적(沮害的)이었다.