• Journal of Welding and Joining
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• v.18 no.1
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• pp.91-96
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• 2000

Characteristics of the weld defect, such as a blowhole and a pit in lap-jointed fillet Co₂ welds of Zn-coated steel sheet were studied in order to make clear the sequence of the blowhole formation during welding. Main conclusions obtained are as follows: 1) Blowhole, wormhole and pit were found in fillet welds, although the optimum welding condition of 200A-23V-100cm/min was applied. 2) Zn was only detected at the solidification boundary at the early stage of the blowhole formation. 3) Most of the blowholes was started to form at lap-joint by the Zn vapor. With increasing of the Zn vapor and its pressure, the blowhole was develope to th bed surface until the completion of weld solidification. 4) The behavior of the blowhole in growth was similar to that of the columnar dendrite during welding.

• Journal of Welding and Joining
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• v.18 no.2
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• pp.196-196
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• 2000

Formation of the weld defect, such as a blowhole and a pit in lap-jointed fillet arc welds has been a serious problem in arc welding of Zn-coated steel sheet. In this study, the relationship among welding conditions, welding materials and defect formation was investigated in order to minimize these defects in the CO₂ welds. In addition, the arc stability of the commercial welding wires was evaluated for revealing their effects on defect formation. Main conclusions obtained are as follows:1) There was no difference between shear tensile strength of the sound welds and that of the welds with blowholes whose diameters are less than 0.5mm. However, the welds with blowholes whose diameters are equal or larger than 0.5mm and pits exhibited tensile strength 10~20% and 30~40% lower than that of the sound welds respectively.2) The optimum welding condition to effectively prevent or reduce the weld defects formation are as follows:- The welding variables of 220A-23V-100cm/min and 120A-190V-30cm/min were recommended for minimizing the weld defects.- The gap between the two sheets at the lap-joint should be controlled to more than 0.2mm- Solid wire was less susceptible to the formation of the weld defects than the flux-cored wire.- The low welding current condition produced less weld defects than the hihg welding current condition.3) One of the reason why the amount of the defect was reduced at the low welding current was the gas discharging by the active agitation of the molten pool, due to an increasing in the number of the short circuit. (Received September 27, 1999)

• Journal of Welding and Joining
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• v.18 no.2
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• pp.69-76
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• 2000

Formation of the weld defect, such as a blowhole and a pit in lap-jointed fillet arc welds has been a serious problem in arc welding Zn-coated steel sheet. In this study, the relationship among welding conditions, welding materials and defect formation was investigated in order to minimize these defects in the CO₂welds. In addition, the arc stability of the commercial welding wires was evaluated for revealing their effects on defect formation. Main conclusions obtained are as follows: 1) There was no difference between shear tensile strength of the sound welds and that of the welds with blowholes whose diameters are less than 0.5mm. However, the welds with blowholes whose diameters are equal or large than 0.5mm and pits exhibited tensile strength 10∼ 20% and 30∼40% lower than that of the sound welds respectively. 2) The optimum welding condition to effectively prevent or reduce the weld defects formation are as follows: -The welding variables of 220A-23V-100cm/min and 120A-19V-30cm/min were recommended for minimizing the weld defects. -The gap between the two sheets at the lap-joint should be controlled to more than 0.2mm. -Solid wire was less susceptible to the formation of the weld defects than the flux-cored wire. -The low welding current condition produced less weld defects than the high welding current condition. 3) One of the reason why the amount of the defect was reduced at the low welding current was the gas discharging by the active agitation of the molten pool, due to an increasing in the number of the short circuit.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.1-8
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• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.8-15
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• 2024

The CaF₂ single crystal has notable characteristics such as a large band gap (12 eV), excellent transparency over a wide wavelength range, low refractive index and dispersion. Due to these outstanding properties, CaF₂ single crystal has considered as a promising material for short-wavelength light sources in recent lithography processes. However, there is an inherent birefringence of the material at 157 nm and the resulting aberration can be compensated for through the combination of the (100) plane and the (111) plane. Therefore, it is necessary to investigate the characteristics according to the plane. In this study, we analyzed crystallinity, optical properties of commercial CaF₂ single crystal wafers grown by the Czochralski method. In particular, through chemical etching under various conditions, it was confirmed that the shape of etch pits appears differently depending on the plane and the shape and array of specific etch pits affected by dislocations and defects were examined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.89-93
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• 2017

GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.