• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1268-1272
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• 2003

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.833-837
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• 2003

The spectral and temporal characteristics of a V-groove AIGaAs-GaAs quantum wire (QWR) laser were investigated with varying the cavity length. At cavity lengths shorter than 300 ${\mu}{\textrm}{m}$, a discrete shift in tile wavelength occurred from the n=1 to the n=2 subband due to the increased cavity losses. Utilizing this characteristic, ultrafast lasing characteristics at each subband were investigated by tile gain switching method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.185-188
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• 2003

본 논문에서는 공진기 길이 변화에 따른 V-자형 알루미늄갈륨비소-갈륨비소(AIGaAs-GaAs) 양자선 레이저의 서브밴드 에너지 천이에 대한 스펙트럼과 시간적 스위칭 특성을 조사하였다. $300{\mu}m$ 이하의 짧은 공진기 길이를 갖는 V-자형 양자선 레이저는 공진기 손실의 증가로 인하여 n=1에서 n=2 서브밴드(subband)로의 양자화 천이(불연속적인 파장 스위칭)가 발생하였고, 초단 광펄스를 생성하는 이득 스위칭방식을 이용하여 초고속 레이징 특성을 관찰하였다.