• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.10-12
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• 2002

Single Josephson junctions of 50 $\mu$m $\times$ 50 $\mu$m were fabricated for several oxidation conditions to investigate controllabilities of critical current density ($J_{c}$) with the standard KRISS processes. Considering the self-field effect suppressing the observed critical current ($I_{c}$) at high $J_{c}$ region, we could reasonably estimate $J_{c}$ values from I-V observations. The dependence of the estimated $J_{c}$ as a function of exposure, which is equal to pressure(P) times time(t), was well fitted to a curve of $J_{c}$ ~ $(Pt)^{-0.36}$. The maximum $J_{c}$ value at the controllability margin was found to be 4 kA/$cm^{2}$ with the current equipment set up.

• 한국세라믹학회지
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• 제32권8호
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• pp.957-965
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• 1995

The ionic conductivityof NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM) based on a hopping model as functions of temoperature and composition. Two conduction paths were used : jumping from Na1 to Na2 and jumping from Na1 to Na2 and jumping from Na2 to Na2. Vacancy availability factor, V was affected by composition, temperature and the conduction paths. For β"-Alumina, it was known that the minimum of charge correlation factor, fc appears at the composition, p=0.5, but there was not shown the minimum of fc for NASICON. When the NASICON composition, x, approaches 2.5, the curve of In σT vs. 1/T* was shown Arrhenius behavior and also In (VWfc) was a linear function of 1/T*. The results of simulations on the considered conduction paths didn't agree with the experimental results. Thus it will be necessary to include the another Na sites as mid-Na site on the conduction path to obtain the better results.

• 한국결정성장학회지
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• 제4권1호
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• pp.63-70
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• 1994

초이온도전체 ${\beta}-Ag_3SI$ 단결정을 AgI와 $AG_2S$의 혼합물을 반응시켜서 열처리하여 얻었다. 성장시킨 단결정은 직경 $200{mu}m$ 정도의 구상으로 성형시켰다. 실온에서 X-선 단결정 해석법을 이용하여 정밀한 결정구조 해석을 행했다. 이들 결정구조의 해석결과 ${\beta}-Ag_3SI$의 $Ag^+$는 6-배위의 3c자리보다 4-배위의 12h자리에 점유함이 밝혀졌다. $Ag^+$의 확률밀도분포(probabilty density function)로 부터 [110]방향에서 $Ag^+$의 one-particle potential(o.p.p.)을 계산하였다.${beta}-Ag_3SI$ 구조의(001)면에서 $Ag^+$가 확산에 필요한 활성화에너지는 0.012eV라는 것이 o.p.p.곡선에 의해 계산되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Biomolecules & Therapeutics
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• 제18권3호
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• pp.343-349
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• 2010

This study was designed to investigate the effects of ticlopidine on the pharmacokinetics of carvedilol after oral or intravenous administration of carvedilol in rats. Carvedilol was administered orally (3 mg/kg) or intravenously (1 mg/kg) without or with oral administration of ticlopidine (4, 12 mg/kg) to rats. The effects of ticlopidine on P-glycoprotein (P-gp) and cytochrome P450 (CYP) 2C9 activity were also evaluated. Ticlopidine inhibited CYP2C9 activity in a concentration-dependent manner with 50% inhibition concentration ($IC_{50}$) of $25.2\;{\mu}M$. In addition, ticlopidine could not significantly enhance the cellular accumulation of rhodamine 123 in MCF-7/ADR cells overexpressing P-gp. Compared with the control group (given carvedilol alone), the area under the plasma concentration-time curve (AUC) was significantly (12 mg/kg, p<0.05) increased by 14-41%, and the peak concentration ($C_{max}$) was significantly (12 mg/kg, p<0.05) increased by 10.7-73.3% in the presence of ticlopidine after oral administration of carvedilol. Consequently, the relative bioavailability (R.B.) of carvedilol was increased by 1.14- to 1.41-fold and the absolute bioavailability (A.B.) of carvedilol in the presence of ticlopidine was increased by 36.2-38.5%. Compared to the i.v. control, ticlopidine could not significantly change the pharmacokinetic parameters of i.v. administered carvedilol. The enhanced oral bioavailability of carvedilol may result from inhibition of CYP2C9-mediated metabolism rather than P-gpmediated efflux of carvedilol in the intestinal and/or in liver and renal eliminatin of carvedilol by ticlopidine.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• Journal of Pharmaceutical Investigation
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• 제27권1호
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• pp.51-56
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• 1997

This study was attempted to investigate the pharmacokinetic interaction of vancomycin (10 mg/kg, i.v.) and probenecid (7.5. 15, and 30 mg/kg, oral) in rabbits. The area under curve (AUC) of plasma vancomycin concentration was significantly increased (p<0.01) in rabbits when the probenecid was coadministrated. Volume of distribution (Vd) was significantly decreased (p<0.05) in rabbits coadministrated with probenecid (15 and 30 mg/kg) and total body clearance (CLt) was decreased significantly (p<0.05. p<0.01) in rabbits coadministrated with probenecid (7.5, 15 and 30 mg/kg). There was significant correlation between AUC and probenecid dose. From the results of this experiment, it is desirable to adjust dosage regimen of vancomycin for reduction of side or toxic effect when the probenecid is coadministered in clinical practice.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• 핵의학기술
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• 제17권1호
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• pp.53-61
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• 2013

방사성 요오드 갑상선 섭취율은 거대갑상선 환자의 경우 그 체적에 의한 유효 갑상선 깊이가 깊어짐으로 인한 기하학적 변동이 있는 것이 사실이다. 본 연구는 방사성 요오드갑상선 섭취율에 있어 검출기와 선원 간 거리와 유효 갑상선 깊이에 따른 기하학적 요인의 영향을 고찰하고자 하였다. $^{131}I$ 370 kBq 선원을 검출기로부터 거리를 20 cm부터 30cm까지 1 cm 간격으로 변화시키며 Captus 3000 thyroid uptake system(Capintec, NJ, USA)으로 측정하였다. 유효갑상선 깊이를 재현하기 위해 목 팬텀을 이용하여 팬텀 내 선원의 깊이를 1 cm, 2 cm, 5 cm으로 변화시키며 같은 방법으로 측정하였다. 실험 결과, 곡선추정 회귀분석 결과 모든 실험군이 거듭제곱곡선에 높은 상관관계를 보이는 것으로 나타났다($$R2{\geq_-}0.915$$). 그러므로 검출기-선원 간 거리가 20 cm보다 30 cm에서 오차가 크게 감소됨을 예상할 수 있다. 모든 실험군에서 팬텀을 쓰지 않았을 때와 유효 갑상선깊이가 1 cm이 적용되었을 때의 계수율이 서로 유의할 만한 차이가 있는 것으로 나타났다(p<0.01). 선형회귀분석 결과 깊이에 따른 계수율의 변화는 모두 감소되는 것으로 나타났으나,$284.3keV{\pm}10%$ 영역에서 깊이에 따른 계수율의 변화는 증가되는 것으로 나타났다. 이 회귀식을 통해 환자의 예상 갑상선 섭취율을 산출해 보았을 때, $364.4keV{\pm}10%$에서 1 cm 당 -6.42%, $364.4keV{\pm}20%$의 영역에 서 -5.09%의 더 낮은 오차를 보였다. 또한 거리에 따른 계수율의 변동계수는 모든 실험군에서 선형으로 증가되는 것으로 나타났다. 그 중 $364.4keV{\pm}20%$, $364.4keV{\pm}10%$ 영역은 비교적 낮은 변동계수와 증가폭을 보였다. 곧, 유효 갑상선 깊이에 따른 오차를 줄이기 위해서는 $364.4keV{\pm}20%$의 영역의 사용이 더 적절할 것으로 보인다. 그러므로 갑상선 깊이에 따른 오차는 갑상선 깊이에 따른 보정계수 적용,$364.4keV{\pm}20%$ 에너지 영역 설정, 디텍터와 선원과의 거리를 연장하였을 때 감소시킬 수 있다고 생각된다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.45-49
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• 2003

본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.