• 한국전자파학회논문지
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• 제18권4호
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• pp.416-422
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• 2007

본 논문에서는 V/UHF 대역인 $20{\sim}500\;MHz$에서 동작하는 광대역 2분기 전력 분배기를 제안하고 페라이트를 이용하여 구현하였다. 4분기 전력 분배기에서 보편적으로 사용되는 4:1 임피던스 변환기 대신 본 논문의 2분기 전력 분배기에서는 2:1 임피던스 변환기를 사용하였다. 구현된 2분기 전력 분배기는 요구 대역 내에서 약 3.5 dB의 삽입 손실, -10 dB 이하의 격리도, -10 dB 이하의 반사 손실 특성을 갖는 것으로 측정되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• 한국재료학회지
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• 제15권3호
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• 한국전자파학회논문지
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• 제18권8호
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• pp.904-912
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• 2007

본 논문에서는 V/UHF 대역인 $20{\sim}500 MHz$에서 동작하는 광대역 4분기 전력 분배기를 전송선 변환기와 페라이트 토로이드를 이용하여 설계하였다. 4:1 임피던스 변환기를 구현하였고, 이 4:1 변환기는 4분기 전력 분배기를 구현하기 위해 브리지 구조를 이용한 2분기 전력 분배기와 연결되었다. 구현된 4분기 전력 분배기는 요구대역 내에서 약 6.8dB의 삽입 손실, -20dB 이하의 격리도, -15dB 이하의 반사 손실 특성을 갖는 것으로 측정되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.533-538
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• 한국식품위생안전성학회지
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• 제14권2호
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• pp.153-159
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• 1999

This study was undertaken to evaluate antioxidative activities of substances isolated from marine resources against human low density lipoprotein (LDL). Methanol-water extract(80 : 20, v/v) of Sargassum ringgoldianum had the highest antioxidant activity and the active substance was purified by silica gel column chromatography by eluting chlorform : methanol mixture (80 : 20 v/v). The active fraction was seperated to several spots on the TLC in chlorofrom : methanol (10 : 1, v/v) mixture. Antioxidative activity of band 4 of fraction 2 on TLC was highest than that of $\alpha$-tocopherol against human LDL oxidation by the method of thiobarbituric acid reactive substance (TBARS). The band 4 of fraction 2 inhibited the copper mediated oxidation of human LDL with almost completely at 1 or 2 mg/ml.

• 대한전자공학회논문지TC
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• 제42권7호
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• pp.41-48
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• 2005

본 연구에서는 60 GHz 대역의 무선 LAN(Wireless Local Area Network) 시스템에서 Balanced 구조를 갖는 증폭기나 믹서에 응용이 가능한 CPW(Coplanar Waveguide)구조의 Tandem 형 3-dB 방향성 결합기를 설계하고 제작하였다. 이는 기존의 edge-coupled 선로를 이용한 3 dB 결합기가 가지는 제작의 어려움과 방향성의 문제를 개선하기 위해 단일 결합선로를 다단으로 평행하게 연결한 구조이다. 우리는 소자의 크기와 제작의 용이함을 고려해, 결합계수가 -8.34 dB를 갖는 단일 결합선로를 2단으로 평행하게 연결한 구조를 채택하였다. 그리고 기존의 Tandem 결합기 제작에서 사용되어왔던 다층 기판 구조나 본딩 구조가 아닌 에어브리지 구조를 이용하여 단일 평면으로 쉽게 구현할 수 있도록 하였고, V-band(50 $\~$75 GHz)내에서 동작할 수 있도록 기생성분을 줄이고 소자 특성을 유지시켰다. 측정결과 V-band에서 완만한 3.5 $\~$4 dB의 결합도와 87.5$^{\circ}{\pm}1^{\circ}$ 의 위상차를, 60 GHz 에서는 30 dB 이상의 방향성을 확인하였다.

• 대한화학회지
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• 제7권3호
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• pp.197-202
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• 1963

The ${\alpha}-and\;{\beta}$-isomer of 4-nitroazoxybenzenes have been separated by liquid chromatography and their U.V. spectra were examined. The n${\to}{\pi}^{\ast}$ transition band of the compounds did not appear, likewise the cases of other compounds of the series. Transition band of the new isomer were as usual as those of other azoxy-compounds, whereas the ${\pi}{\to}{\pi}^{\ast}$ transition band of the other isomer which is reported in the literature shown peculier hypochromic shift and hypochromic effect. From the spectroscopic point of view it is very likely that the new isomer (m.p. $184-5^{\circ}C$) is ${\alpha}$-isomer and the other one (m.p. $152^{circ}C$) is ${\beta}$-isomer contrary to the literature.

• Bulletin of the Korean Chemical Society
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• 제23권10호
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• pp.1404-1408
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• 2002

The resonance Raman spectra of trans-polyacetylene films doped heavily with electron donor (Na) and acceptor (HClO4) have been measured with excitation wavelengths between 488- and 1320-nm, and the relationships between the Raman excitation photon energies (2.54-0.94 eV) and its wavenumbers were discussed. We found the linear dependence of the Raman shifts with the exchanges of excitation photon energies. In particular, the Raman wavenumbers in the C=C stretching $(V_1$ band) showed a dramatic decrease with the increase in Raman excitation photon energies. In the case of acceptor doping, its change is larger than that of donor doping. The observed wavenumber (1255-1267 $cm^{-1}$) of the $V_2$ band (CC stretch) of Na-doped form is lower than that of the corresponding band (1290-1292 $cm^{-1}$) of its pristine trans-polyacetylene, whereas the contrary is the case for the HClO4 doped form (1295-1300 $cm^{-1}$). The origin of doping-induced Raman bands is discussed in terms of negative and positive polarons.

• 천문학논총
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• 제30권2호
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• pp.183-187
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• 2015

We use ALLWISE data release W1- and W2-band epoch photometry collected by the Wide-Field Infrared Survey Explorer (WISE) to determine slopes of the period-luminosity relations for RR Lyrae stars in 15 globular clusters in the corresponding bands. We further combine these results with V- and K-band photometry of Galactic field RR Lyrae stars to determine the metallicity slopes of the log $P_F-[Fe/H]-M_K$, log $P_F-[Fe/H]-M_{W1}$, and log $P_F-[Fe/H]-M_{W2}$ period-metallicity-luminosity relations. We infer the zero points of these relations and determine the kinematical parameters of thick-disk and halo RR Lyraes via statistical parallax, and estimate the RR Lyrae-based distances to 18 Local-Group galaxies including the center of the Milky Way.