• 제목/요약/키워드: V-Band

검색결과 2,052건 처리시간 0.031초

Hot-air 공정을 이용한 무기 CsPbl2Br 페로브스카이트 태양전진 제작 연구 (Study of Inorganic CsPbI2Br Perovskite Solar Cell Using Hot-air Process)

  • 김리나;이동건;강동원;김은도;김제하
    • Current Photovoltaic Research
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    • 제10권4호
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    • pp.101-106
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    • 2022
  • We prepared a CsPbI2Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr2) and Lead (II) iodide (PbI2) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI2Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI2Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.

서로 다른 증착 온도에서 성장된 BaWO4:Sm3+ 형광체 박막의 구조, 광학, 표면 형상의 특성 (Structural, optical, and morphological properties of BaWO4:Sm3+ phosphor thin films grown at different deposition temperature)

  • 조신호
    • 한국표면공학회지
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    • 제55권2호
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    • pp.96-101
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    • 2022
  • The effects of the growth temperature on the structural, optical, and morphological properties of BaWO4:Sm3+ phosphor thin films were investigated. The BaWO4:Sm3+ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO4 (112) diffraction peak. The 830 nm-thick BaWO4:Sm3+ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO4:Sm3+ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O2--Sm3+ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO4:Sm3+ thin films showed an intense red emission peak at 641 nm due to the 4G5/26H9/2 transition of Sm3+, indicating that the Sm3+ ions occupied sites of non-inversion symmetry in the BaWO4 host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO4:Sm3+ thin films.

Study on terahertz (THz) photoconversion technology based on hyperfine energy-level splitting of Positronium (Ps) generated from relativistic electron beams

  • Sun-Hong Min;Chawon Park;Ilsung Cho;Minho Kim;Sukhwal Ma;Won Taek Hwang;Kyeong Min Kim;Seungwoo Park;Min Young Lee;Eun Ju Kim;Kyo Chul Lee;Yong Jin Lee;Bong Hwan Hong
    • 대한방사성의약품학회지
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    • 제6권2호
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    • pp.102-115
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    • 2020
  • In the state of Positronium (Ps), which is an unstable material created by the temporary combination of electrons and positrons, the imaging technology through photo-conversion methodology is emerging as a new research theme under resonance conditions through terahertz electromagnetic waves. Normally, Positronium can be observed in the positron emission computed tomography (PET) process when an unstable, separate state that remains after the pair annihilation of an electron and a positron remains. In this study, terahertz (THz) waves and Cherenkov radiation (CR) are generated using the principle of ponderomotive force in the plasma wake-field acceleration, and electrons and positrons are simultaneously generated by using a relativistic electron beam without using a PET device. We confirm the possibility of Positronium photoconversion technology in terahertz electromagnetic resonance conditions through experimental studies that generate an unstable state. Here, a relativistic electron beam (REB) energy of 0.5 MeV (γ=2) was used, and the terahertz wave frequencies is G-band. Meanwhile, a THz wave mode converting three-stepped axicon lens was used to apply the photoconversion technology. Through this, light emission in the form of a luminescence-converted Bessel beam can be verified. In the future, it can be used complementarily with PET in nuclear medicine in the field of medical imaging.

Polarimetry of (162173) Ryugu at the Bohyunsan Optical Astronomy Observatory using the 1.8-m Telescope with TRIPOL

  • Jin, Sunho;Ishiguro, Masateru;Kuroda, Daisuke;Geem, Jooyeon;Bach, Yoonsoo P.;Seo, Jinguk;Sasago, Hiroshi;Sato, Shuji
    • 천문학회보
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    • 제46권1호
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    • pp.45.2-46
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    • 2021
  • The Hayabusa 2 mission target asteroid (162173) Ryugu is a near-Earth, carbonaceous (C-type) asteroid. Before the arrival, this asteroid is expected to be covered with mm- to cm- sized grains through the thermal infrared observations [1]. These grains are widely understood to be formed by past impacts with other celestial bodies and fractures induced by thermal fatigue [2]. However, the close-up images by the MASCOT lander showed lumpy boulders but no abundant fine grains [3]. Morota et al. suggested that there would be submillimeter particles on the top of these boulders but not resolved by Hayabusa 2's onboard instruments [4]. Hence, we conducted polarimetry of Ryugu to investigate microscopic grain sizes on its surface. Polarimetry is a powerful tool to estimate physical properties such as albedo and grain size. Especially, it is known that the maximum polarization degree (Pmax) and the geometric albedo (pV) show an empirical relationship depending on surface grain sizes [5]. We observed Ryugu from UT 2020 November 30 to December 10 at large phase angles (ranging from 78.5 to 89.7 degrees) to derive Pmax. We modified TRIPOL (Triple Range Imager and POLarimeter, [6]) to attach to the 1.8-m telescope at the Bohyunsan Optical Astronomy Observatory (BOAO). With this instrument, we observed the asteroid and determined linear polarization degrees at the Rc-band filter. We obtained sufficient data sets from 7 nights at this observatory to determine the Pmax value, and collaborated with other observatories in Japan (i.e., Hokkaido University, Higashi-Hiroshima, and Nishi-Harima) to acquire linear polarization degrees of the asteroid from total 24 nights observations with large phase angle coverage (From 28 to 104 degrees). The observational results have been published in Kuroda et al. (2021) [7]. We thus found the dominance of submillimeter particles on the surface of Ryugu from the comparison with other meteorite samples from the campaign observation. In this presentation, we report our activity to modify the TRIPOL for the 1.8-m telescope and the polarimetric performance. We also examine the rotational variability of the polarization degree using the TRIPOL data.

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Study on the Method of Diagnosing the Individuals Crop Growth Using by Multi-Spectral Images

  • Dongwon Kwon;Jaekyeong Baek;Wangyu Sang;Sungyul Chang;Jung-Il Cho;Ho-young Ban;HyeokJin Bak
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2022년도 추계학술대회
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    • pp.108-108
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    • 2022
  • In this study, multispectral images of wheat according to soil water state were collected, compared, and analyzed to measure the physiological response of crops to environmental stress at the individual level. CMS-V multi-spectral camera(Silios Technologies) was used for image acquisition. The camera lens consists of eight spectral bands between 550nm and 830nm. Light Reflective information collected in each band sensor and stored in digital values, and it is converted into a reflectance for calculating the vegetation index and used. According to the camera manual, the NDVI(Normalized Difference vegetation index) value was calculated using 628 nm and 752 nm bands. Image measurement was conducted under natural light conditions, and reflectance standards(Labsphere) were captured with plants for reflectance calculation. The wheat variety used Gosomil, and the wheat grown in the field was transplanted into a pot after heading date and measured. Three treatments were performed so that the soil volumetric water content of the pot was 13~17%, 20~23%, and 25%, and the growth response of wheat according to each treatment was compared using the NDVI value. In the first measurement after port transplantation, the difference in NDVI value according to treatment was not significant, but in the subsequent measurement, the NDVI value of the treatment with a water content of 13 to 17% was lowest and was the highest at 20 to 23%. The NDVI values decreased compared to the first measurement in all treatment, and the decrease was the largest at 13-17% water content and the smallest at 20-23%. Although the difference in NDVI values could be confirmed, it would be difficult to directly relate it to the water stress of plants, and further research on the response of crops to environmental stress and the analysis of multi-spectral image will be needed.

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Chemical Vapor Deposition 공정으로 제작한 CuI p-type 박막 트랜지스터 (p-type CuI Thin-Film Transistors through Chemical Vapor Deposition Process)

  • 이승민;장성철;박지민;윤순길;김현석
    • 한국재료학회지
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    • 제33권11호
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    • pp.491-496
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    • 2023
  • As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

High quality topological insulator Bi2Se3 grown on h-BN using molecular beam epitaxy

  • Park, Joon Young;Lee, Gil-Ho;Jo, Janghyun;Cheng, Austin K.;Yoon, Hosang;Watanabe, Kenji;Taniguchi, Takashi;Kim, Miyoung;Kim, Philip;Yi, Gyu-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.284-284
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    • 2016
  • Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

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금강제비꽃(Viola diamantiaca Nakai) 자생지의 환경특성과 RAPD 분석 (Environmental characteristics on habitats of Viola diamantiaca Nakai and its RAPD analysis)

  • 서원복;유기억
    • 식물분류학회지
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    • 제41권1호
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    • pp.66-80
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    • 2011
  • 금강제비꽃 보전을 위한 기초자료를 확보하기 위해 18개 지역을 대상으로 자생지 환경특성과 RAPD를 이용한 집단 간 유연관계 분석을 실시하였다. 자생지는 해발 614-1,462 m의 범위에 위치하였으며, 경사는 $3-30^{\circ}$로 비교적 완만하였다. 식생조사 결과 조사된 방형구 내에 출현한 관속식물은 총 268분류군이었으며, 초본층은 금강제비꽃의 중요치가 11.58%로 가장 높았고, 다음으로는 조릿대(5.61%), 벌깨덩굴(5.21%), 단풍취(3.62%), 큰개별꽃(3.60%) 등의 순으로 나타나 이 종류들이 금강제비꽃과 친화도가 높은 것으로 생각된다. 종다양도는 평균 1.36, 균등도는 평균 0.89, 우점도는 평균 0.07로 나타나 비교적 균일한 식생구조를 갖는 것으로 나타났다. 토양 분석결과 포장용수량, 유기물함량 그리고 pH는 각각 평균 25.99%, 17.47%, 5.19로 조사되었으며, 토성은 11개 지역이 사양토, 7개 지역이 양토로 확인되었다. RAPD 분석을 통해 총 78개의 band가 확인되었으며, 그 중 polymorphic band는 64(84.6%)개로 지역 간 높은 유전변이를 보였다. 18개 집단은 유사도지수 0.53-0.86 범위 내에서 5개의 분계조를 형성하였다. 지리적으로 가장 격리된 지리산 집단이 가장 기부에 위치하였고, 강원도 남부의 2개 집단과 충청북도의 3개 집단도 함께 유집되었다. 또한 강원도 중부에 위치한 4개 지역과 경상북도의 보현산이 하나의 분계조를 형성하였으며, 경기도의 2개 지역과 강원도 북부의 5개 지역이 한 개의 군을 이루었고, 가리왕산 집단은 강원도 남부와 중부집단의 분계조 사이에 위치하였다.

양자화학계산을 이용한 SiO2 동질이상의 전자 구조와 Si L2,3-edge X-선 라만 산란 스펙트럼 분석 (Electronic Structure and Si L2,3-edge X-ray Raman Scattering Spectra for SiO2 Polymorphs: Insights from Quantum Chemical Calculations)

  • 김용현;이유수;이성근
    • 광물과 암석
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    • 제33권1호
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    • pp.1-10
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    • 2020
  • 고압 환경에서 규산염 용융체의 원자 구조에 대한 정보는 지구 내부 마그마의 열전도율이나 주변 암석과의 원소 분배계수와 같은 이동 물성을 이해하는 단서를 제공한다. 규소의 전자 구조는 규산염 다면체 주변의 산소 원자 분포와 연관성을 가질 것으로 예상되나, 이 사이의 상관관계가 명확하게 밝혀져 있지 않다. 본 연구는 SiO2의 고밀도화에 따른 규소의 전자 구조 변화의 미시적인 기원을 규명하기 위해 SiO2 동질이상의 규소 부분 상태 밀도와 L3-edge X-선 흡수분광분석(X-ray absorption spectroscopy; XAS) 스펙트럼을 계산하였다. 규소의 전도 띠 영역에서 전자 구조는 결정 구조에 따라서 변화하였다. 특히 d-오비탈은 108, 130 eV 영역에서 배위 환경에 따른 뚜렷한 차이를 보였다. 계산된 XAS 스펙트럼은 규소 전도 띠의 s,d-오비탈에서 기인하는 피크를 보였으며, 결정 구조에 따라 s,d-오비탈과 유사한 양상으로 변화했다. 계산된 석영의 XAS 스펙트럼은 SiO2 유리의 XR S 실험 결과와 유사하였으며 규소 주변 원자 환경이 비슷하기 때문으로 생각된다. XAS 스펙트럼을 수치화한 무게 중심 값은 Si-O 결합 거리와 밀접한 상관관계를 가지며 이로 인하여 고밀도화 과정에서 체계적으로 변화한다. 본 연구의 결과는 Si-O 결합 거리에 민감한 규소 L2,3-edge XRS가 규산염 유리 및 용융체의 고밀도화 기작을 규명하는 과정에서 유용하게 적용될 수 있음을 지시한다.

효소 전처리에 의한 상황버섯 β-glucan 추출물의 특성 (Characteristics of mushroom Phellinus baumii extracts with enzyme pretreatment)

  • 손은지;류은아;이상한;김영찬;황인욱;정신교
    • Journal of Applied Biological Chemistry
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    • 제61권1호
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    • pp.101-108
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    • 2018
  • 본 연구에서는 국내산 상황버섯의 효소 가수분해 전처리를 통한 ${\beta}-glucan$의 최적 추출조건을 확립하고 그에 따른 활성을 알아보고자 추출 조건에 따른 생이화학적활성을 측정하였다. 효소가수분해 조건을 최적화하기 위해 실시한 반응표면분석법의 결과 0.66%(v/v)의 viscozyme 농도에서 6.08시간 반응하는 것이 최적이라 예측되었으며($R^2=0.9245$), 이에 따라 최적 추출 조건에서 추출한 시료의 ${\beta}-glucan$ 함량은 1.9594 g/100 g으로 측정되었다. 추출 수율(0.76-16.40%)은 EBE가 NEBE에 비해 약 3배 높았다. ${\beta}-glucan$ 순도(11.15-59.05%)로 가장 높았으며, ${\beta}-glucan$ 함량 또한 0.26-3.38 g/100 g으로 EB (3.38 g/100 g)가 가장 높았다. 총당 함량(0.61-1.17 mg/mL)은 NEB, EB가 NEBE, EBE보다 높았으며, EB가 가장 높았다. 구성당 분석 결과, 모든 추출물에서 glucose의 함량이 가장 높았으며, 대조구와 효소 전처리구 모두 정제하면서 그 비율이 증가하였다. 단백질 함량(0.44-11.73 mg/mL)은 NEBE, EBE가 NEB, EB보다 높았으며, EBE가 가장 높았다. FT-IR 분석 결과 $890cm^{-1}$ 부근에서 peak가 확인되었기에 ${\beta}-glycosidic$ linkage를 가지고 있는 것으로 판단하였다. MTT assay를 통해 B6F10과 SK-MEL-5 세포 독성을 측정한 결과 B6F10의 경우 대조구의 세포 생존율을 100%로 하였을 때 세포 생존율이 80% 이상으로 나타나 세포독성을 보이지 않았으나, SK-MEL-5에서는 EBE를 $100{\mu}g/mL$의 농도로 처리하였을 때 세포 생존율이 75%로 나타나 약간의 세포독성을 보였다. Wound healing assay를 통해 암세포 증식 억제활성 측정 결과, 정제한 NEB, EB가 NEBE, EBE보다 활성이 높았으며, 특히 12시간일 때 EB $30{\mu}g/mL$를 처리한 경우 B6F10과 SK-MEL-5 모두에서 가장 높은 활성을 나타내었다.