• Journal of the Korean Society for Precision Engineering
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• v.28 no.3
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• pp.315-322
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• 2011

High-accuracy micropatterns such as V-shaped microgrooves are increasingly in demand for various engineering areas. And the technical trend goes for large surface areas in precision machining technology. So micropatterns with large surface areas are expected to play an increasingly important role in today's manufacturing technology In this study, we focused on developing machining technologies. First, a machine vision system for precise tool setting is developed. Second, an on-machine measurement (OMM) system for large-area measurement is implemented. And also software for tool path generation and simulation is developed. With these technologies we fabricated large-surface micropatterns in an electroless nickel-plated workpiece with single-crystal diamond tools and a 32-in, $675mm{\times}450mm$ mold with tens of V-and pyramid-shaped micropatterns.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.263-267
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• 2013

The continuing demand for increasingly slimmer and brighter liquid crystal display (LCD) panels has led to an increased focus on the role of light guide panels (LGPs) or optical films that are used to obtain diffuse, uniform light from the backlight unit (BLU). The most basic process in the production of such BLU components is the micromachining of V-shaped grooves. Thus, given the current trend, micromachining of V-shaped grooves is expected to play increasingly important roles in today's manufacturing technology. LCD BLUs comprise various optical elements such as a LGP, diffuser sheet, prism sheet, and protector sheet with V-shaped grooves. High-aspect-ratio patterns are required to reduce the number of sheets and enhance light efficiency, but there is a limit to the aspect ratio achievable for a given material and cutting tool. Therefore, this study comprised a series of experimental evaluations conducted to determine the machining limit in microcutting V-shaped grooves on electroless nickel plated die materials when using single-crystal diamond tools with point angles of $20^{\circ}-80^{\circ}$. Cutting performance was evaluated at various cutting speeds and depths of cut using different machining methods and machine tools. The experimental results are that V-shaped patterns with angles of $80^{\circ}$ or up can be realized regardless of the machining conditions and equipment. Moreover, the feed rate has little effect on machinability, and it is thought that the fly-cut method is more efficient for shallow patterns.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.195-196
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• 2011

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.238-238
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• 2010

최근 전자산업의 발전은 형상 면에서 경박 단소화로 급속하게 진행되고 있으며, 전자소자 내부에서의 배선재료로 사용되고 있는 알루미늄(Al) 박막의 두께 역시 얇아지고 있다. 두께가 20 nm 이하로 작은 극박막 범위에서 박막의 두께 증가에 따라 전기가 잘 흐르기 시작하는 박막의 최소두께로 정의 되는 유착두께를 실시간으로 측정하는 방법을 구현하고 임의의 금속박막과 기판의 조합에 있어서 각각의 재료에 대한 유착두께를 제공함으로써 향후 미세전자소자의 제작시 배선 재료의 선택에 대한 기초자료를 축적할 수 있다. 또한 금속박막의 증착공정 직전에 기판을 표면처리 하여 기판을 활성화시킬 때 표면처리가 박막의 유착두께에 미치는 영향에 대해 박막의 미세구조 변화 관점에서 연구함으로써 여러 가지 금속박막에 대한 유착두께를 줄일 수 있는 방법을 도출 할 수 있다. 본 연구에서는 유리 기판 위에 사진 식각 공정으로 패턴을 형성하고 패턴이 형성된 유리 기판은 스퍼터에 연결된 4 point probe에 구리 도선으로 연결한 후 DC 마그네트론 스퍼터법으로 Al을 증착하면서 실시간으로 시간에 따른 전기저항을 측정을 하였다. 이때 스퍼터 내부 진공도는 $4.6\;{\times}\;10^{-5}\;torr$ 까지 낮춰준 후 Al을 증착 할 때 진공도는 $1.1\;{\times}\;10^{-2}\;torr$로 맞춰주고 Ar 가스를 20 sccm 넣어준다. 1초 간격으로 전기저항을 측정한 결과 25초대에 전기저항이 급격히 감소하였으며 이때 Al 박막의 두께는 $120{\AA}$ 이고 이 두께에서부터 전류의 흐름이 좋은 것을 알 수 있다. 박막 두께에 따른 특성을 알기위해 UV 영역의 빛을 사용하는 광전자 분광기(Photoelectron Spectrometer)를 이용해 일함수를 측정하였다. Al 의 일반적인 일함수는 4.28 eV 이며, 두께가 $120{\AA}$일 때의 일함수는 4.2 eV로 거의 비슷한 값을 얻었다. 전류가 잘 흐르기 전인 12초대에서 두께가 $60{\AA}$일 때 일함수는 4.00 eV 이고 전류가 흐르기 시작한 후 50초대에서 Al 박막 두께가 $200{\AA}$ 일 때 일함수는 4.28 eV 로 일반적인 Al의 일함수와 같은 값을 얻을 수 있었다. 광전자 분광기술은 전자소자에서 중요한 전자의 성능예측에 도움을 줄 수 있으며 물질의 표면에서 더욱 다양한 정보를 얻을 수 있다. 또한 실시간 전기저항 측정을 통한 금속박막의 전기전도 특성과 미세구조에 대한 기초 자료를 제공함으로써 신기술 발전에 공헌할 것이다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.11
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• pp.45-51
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• 2008

Successive micro-scale V-grooves and a grid of pyramids were machined by elliptical vibration tufting (EVC) to investigate feasibility of using EVC as an alternative method of creating micro-molds to photo-lithography and electroforming, which have been commonly employed. An elliptical vibration grooving machine was developed which consists of two orthogonally-arranged piezoelectric actuators, a diamond cutting tool, and a motorized xyz stage. The micro-scale features were machined on materials of copper, duralumin, nickel, and hastelloy and it was found that EVC significantly reduces cutting resistance and prohibits generation of side burrs and rollover burrs, thus resulting in improving machining qualify of micro-molds in ail experimented workpiece materials.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.9
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• pp.901-905
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• 2012

We present an electroporation and viability monitoring chip for lung cancer cells in a single channel with multiple electric field zones. Previous electroporation chips utilized multiple microchannels or electrodes to form multiple electric fields, thus resulting in complex structures. However, the present chip can generate multiple electric fields in a single stepwise microchannel between a pair of electrodes, thus achieving the analysis of both cell electroporation and viability with a simple structure. We demonstrate that the electric field of 0.4 kV/cm results in a maximum percentage of $51.4{\pm}3.0%$ and $26.6{\pm}0.7%$ of viable and electroporated human lung cancer cells, H23 and A549, respectively. The present chip has potential for use in integrated cell chips for transfection studies.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.9-15
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• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.