• Electrical & Electronic Materials
• /
• v.12 no.7
• /
• pp.7-11
• /
• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.205-205
• /
• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.174-174
• /
• 2008

초음파를 이용하여 액체 연료를 분사하면 균일한 입경과 미립화가 우수하며 에너지 절약과 공해방지등을 할 수 있다. 또한 유속과 유량에 관계없이 이용할 수 있어 반도체 분야의 웨이퍼와 평판 표시기상에 사진 석판용 화학물질의 균일도포 컴퓨터 하드 디스크의 광택제 도포등에 사용할 수 있다. 이처럼 초저의 유출 용량을 요구하는 모든 공정 및 액체연료의 분사가 요구되는 모든 산업에 적용할 수 있는 장점을 가지고 있다. 하지만 현제까지 주로 사용되고 있는 초음파노즐의 액츄에이터는 단판액츄에이터형로 높은 교류전압을 인가해주어야 하는 단점을 가지고 있다. 이 단점을 해결하기 위해 적층액츄에이터형을 사용하여 초음파 노즐 구동하면 낮은 교류 입력전압에서도 단판액츄에이터형 초음파 노즐과 같은 특성을 가질 수 있다. 또한 초음파 노즐의 구동시 기계적인 진동을 이용하므로 많은 열을 발생시켜 노즐의 온도가 상승하여 세라믹 액츄에이터에도 그 영향을 미치게 되어 열적 열화 현상이 일어날 수 있기에 높은 큐리온도를 가지는 액츄에이터가 필요하다. 본 실험에서는 $Pb(Mn_{1/3}Nb_{2/3})_{0.02}(Ni_{1/3}Nb_{2/3})_{0.12}(Zr_{0.50}Ti_{0.50})_{0.86}O_3$ 조성을 사용하여 $900^{\circ}C$의 저온에서 액상 소결하여 적층혈액츄에이터를 제작하였으며 압전 및 유전 특성을 조사하였다. 제작된 초음파노즐을 구동하기 위해서는 약 36kHz의 30V이상의 교류입력전압 할 수 있는 구동회로가 필요로 한다. 압전액츄에이터의 구동을 위해서는 정확한 정현파 입력이 필요 없다. 압전액츄에이터의 특성상 유사 정현파 입력 만으로도 임피던스 매칭이 이루어지기 때문에 설계가 쉽고 간편한 Push-Pull 방식을 이용한 PWM인버터를 사용하였고 인버터의 출력 주파수를 34~38kHz까지 가변 할 수 있게 설계하였다. 제작된 적층액츄에이터형 초음파 노즐을 PWM인버터로 실제 액체 연료인 경유를 분사하였을 때의 액츄에이터의 온도 변화에 따른 공진주파수와 온도 의존성, 전기적 특성을 조사하고 미립화 분사되는 경유의 미립자 크기 및 최대 분사량을 조사 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.346-346
• /
• 2007

압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.

• Economic and Environmental Geology
• /
• v.22 no.1
• /
• pp.35-63
• /
• 1989

Geochemical characteristics of the Guryongsan (Ogcheon) uraniferous black slate show that this is an analogue to the conventional Chattanooga and Alum shales in occurrences. Whereas, its highest enrichment ratio in metals including uranium, among others, is explained by the cyclic sedimentation of the black muds and quartz-rich silts, and the uniform depositional condition with some what higher pH condition compared to the conditions of the known occurrences. The cyclic sedimentation, caused by the periodic open and close of the silled basin, has brought about the flush-out) of the uranium depleted water and the recharge with the new metal-rich sea water, which consequently contributed to the high concentration of metals in mud. The metal-rich marine black muds, which mostly occur in the early to middle Palaeozoic times, is attributed by the geologic conditions which related to the atmospheric oxygen contents, and these are scarcely met in the late Precambrian and/or with the onset of Palaeozoic era in the geologic evolution of the earth.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.11
• /
• pp.81-97
• /
• 1972

Experiments and investigations were done basically and practically for the purpose of labor saving in paddy rice cultivation especially on Homizil i.e. hoeing and herbicide, 1969. 8 concrete tanks were established on the open base of Keon Kuk University for comparison of percolation, dissolved oxygen and yield test of rice in the paddy plot of tank. The dimension of the bottom of each tank is square meter. Each of the 4 of the 8 tanks is 21cm in height and each of the remaining 4 tanks is 36cm. Each tank has a system that comprises 2 sets of tubes, each of which has 20 holes of 5mm in diameter scattered every side and is covered with nylon cloth taking water in the tank. One set consists of 4 P.V.C tubes. The first set is situated 8cm below the top of the tank and the second set is located at bottom layer inside the tank. The 4 tubes of each set are combined together and led to the glass tube which protects from inside to outside. And this inside-outside glass tube is connected to the small rubber tube. Also a glass tube is set 4cm below the top of the tank. Paddy loam was filled on sand in each of the tanks in the soil depth of either 15cm or 30cm. The depth of sand was 5cm in the soil depth of 15cm and 10cm in the soil depth of 30cm. (Fig. 1, 2 and 3). The paddy rice was grown in the tank. The percolation of water, the dissolved oxygen and the yield of rice were observed in the tank. And the dissolved oxygen was detected by Winkler method. A sandy paddy field of heavy percolation was selected at the field of the National Agricultural Material Inspection Center in Seoul. It was divided into 9 plots. These plots were given 3 treatments: (A) not hoeing, (B) hoeing one time and (C) hoeing two times. These treatments were replicated 3 times along the latin square design. The paddy rice was grown and sprayed with Stam F-34 in the all plots for the purpose of killing weeds before hoeing. The two types of paddy of field i.e. one for normal percolation and the other for ill drainage were selected at Iri Crop Experiment Station, Jeonla-Bukdo. Each field was divided into 24 plots for 8 treatments. They are: (A) not hoeing; (B) hoeing one time; (C) hoeing two times; (D) not hoeing but treating with herbicide, Pamcon; (E) hoeing one time and weeding two times also treating with herbicide, Pamcon; (F) hoeing two times and weeding one time a], o treating with herbicide, Pamcon; (G) hoeing two times and weeding two times also treating with herbicide, Pamcon, ; (H) usual manner. The labor hours and expenses needed for weeding in the paddy by hoeing were investigated in a farmer at Suwon and the price of herbicide and the yield of rice were taken out at Iri, Jeonla-Bukdo. The results obtained from the above experiments and investigations are as follows: 1. The relationship between percolation and dissolved oxygen shows that a very small amount of oxygen is detected in the soil water under 2cm below surface of earth in the paddy even when percolation is over 4.0cm per 24 hours (Tab. 1). 2. The relationship between percolation and yield of rice shows that the yield of rice increases in the percolation of 0cm and 1.5cm per 24 hours and decreases in the percolation of 2.5cm and 3.4cm in the plot of the 15cm ploughing depth and increases in the percolation of 1.4cm and 3.0cm and decreases in the percolation of 0cm and 4.0cm in the plot of 30cm ploughing depth (Tab. 1 and Fig. 5). 3. The yield of paddy weeded with Stam F-34 in the sandy field of heavy percolation in Seoul was 3.02 tons in the plot of not hoeing, 2.99 tons in hoeing one time and 3.05 tons in hoeing two times per hectare (Tab. 5). 4.1). 4. 1) The yield of rice per 10 ares in the field of normal percolation at Iri was 338kg in not hoeing, 379kg in hoeing one time, 383kg in hoeing two times, 413kg in spraying herbicide, Pamcon, and not hoeing, 433kg in spraying herbicide, Pamcon, and hoeing one time and weeding two times, 399kg in spraying herbicide, Pamcon, and hoeing two times and weeding one time, 420kg in spraying herbicide, Pamcon, and hoeing two times and weeding two times and 418kg in usual manner (Tab. 6-1). 2) The yield of rice per 10 ares in the field of ill drainage at Iri was 323kg in not hoeing, 363kg in hoeing one time, 342kg in hoeing two times, 388kg in spraying herbicide, Pamcon, and not hoeing, 425kg in spraying herbicide, Pamcon, and hoeing one time and weeding two times, 427kg in spraying herbicide, Pamcon, and hoeing two times and weeding one time, 449kg in spraying herbicide, Pamcon, and hoeing two times and weeding two times and 412kg in usual manner (Tab. 6-2). 5. 1) The labor hours for weeding by hoeing was 37.1 hours but 53.5 hours if hours for meal, smoking and so on are included, and the expenses including labor cost needed for weeding by hoeing in the paddy rice was 2, 346 Won per 10 ares at Suwon (Tab. 7). 2) The labor hours for weeding by spraying herbicide with hand sprayer in the paddy rice was about 5 hours per 10 ares at Suwon and the expenses for weeding by spraying herbicide in the paddy rice was 750 Won but 1130 Won if the loss by decrement of rice in the paddy field of ill drainage per 10 ares is calculated in estimation at Iri (Tab. 8). From these observations and investigations it is known that using of some kinds of herbicides Saves labor and expenses of weeding, almost without giving damages to the rice itself, in the field of normal or heavy percolation comparing usual manner of hoeing.