• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.416-422
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• 2007

In this paper, a broadband 2-way power divider which can be used from 20 MHz to 500 MHz in the V/UHF band is designed using transmission-line transformer and ferrite toroid. A 2:1 impedance transformer instead of the conventional 4:1 impedance transformer is realized and this 2:1 transformer is connected with the conventional bridge-type 2-way divider to form a 2-way power divider. Insertion loss of about 3.5 dB, isolation of less than -10 dB, and return loss of less than -10 dB in most band of interest are measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.904-912
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• 2007

In this paper, a broadband 4-way power divider which can be used from 20 MHz to 500 MHz in the V/UHF band is designed using transmission-line transformer and ferrite toroid. A 4:1 impedance transformer is realized and this 4:1 transformer is connected with bridge-type 2-way dividers to form a 4-way rower divider, Insertion loss of about 6.8dB, isolation of less than -20dB, and return loss of less than -15dB in most band of interest are measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.533-538
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• Journal of Food Hygiene and Safety
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• v.14 no.2
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• pp.153-159
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• 1999

This study was undertaken to evaluate antioxidative activities of substances isolated from marine resources against human low density lipoprotein (LDL). Methanol-water extract(80 : 20, v/v) of Sargassum ringgoldianum had the highest antioxidant activity and the active substance was purified by silica gel column chromatography by eluting chlorform : methanol mixture (80 : 20 v/v). The active fraction was seperated to several spots on the TLC in chlorofrom : methanol (10 : 1, v/v) mixture. Antioxidative activity of band 4 of fraction 2 on TLC was highest than that of $\alpha$-tocopherol against human LDL oxidation by the method of thiobarbituric acid reactive substance (TBARS). The band 4 of fraction 2 inhibited the copper mediated oxidation of human LDL with almost completely at 1 or 2 mg/ml.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.41-48
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• 2005

We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

• Journal of the Korean Chemical Society
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• v.7 no.3
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• pp.197-202
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• 1963

The ${\alpha}-and\;{\beta}$-isomer of 4-nitroazoxybenzenes have been separated by liquid chromatography and their U.V. spectra were examined. The n${\to}{\pi}^{\ast}$ transition band of the compounds did not appear, likewise the cases of other compounds of the series. Transition band of the new isomer were as usual as those of other azoxy-compounds, whereas the ${\pi}{\to}{\pi}^{\ast}$ transition band of the other isomer which is reported in the literature shown peculier hypochromic shift and hypochromic effect. From the spectroscopic point of view it is very likely that the new isomer (m.p. $184-5^{\circ}C$) is ${\alpha}$-isomer and the other one (m.p. $152^{circ}C$) is ${\beta}$-isomer contrary to the literature.

• Bulletin of the Korean Chemical Society
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• v.23 no.10
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• pp.1404-1408
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• 2002

The resonance Raman spectra of trans-polyacetylene films doped heavily with electron donor (Na) and acceptor (HClO4) have been measured with excitation wavelengths between 488- and 1320-nm, and the relationships between the Raman excitation photon energies (2.54-0.94 eV) and its wavenumbers were discussed. We found the linear dependence of the Raman shifts with the exchanges of excitation photon energies. In particular, the Raman wavenumbers in the C=C stretching $(V_1$ band) showed a dramatic decrease with the increase in Raman excitation photon energies. In the case of acceptor doping, its change is larger than that of donor doping. The observed wavenumber (1255-1267 $cm^{-1}$) of the $V_2$ band (CC stretch) of Na-doped form is lower than that of the corresponding band (1290-1292 $cm^{-1}$) of its pristine trans-polyacetylene, whereas the contrary is the case for the HClO4 doped form (1295-1300 $cm^{-1}$). The origin of doping-induced Raman bands is discussed in terms of negative and positive polarons.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.183-187
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• 2015

We use ALLWISE data release W1- and W2-band epoch photometry collected by the Wide-Field Infrared Survey Explorer (WISE) to determine slopes of the period-luminosity relations for RR Lyrae stars in 15 globular clusters in the corresponding bands. We further combine these results with V- and K-band photometry of Galactic field RR Lyrae stars to determine the metallicity slopes of the log $P_F-[Fe/H]-M_K$, log $P_F-[Fe/H]-M_{W1}$, and log $P_F-[Fe/H]-M_{W2}$ period-metallicity-luminosity relations. We infer the zero points of these relations and determine the kinematical parameters of thick-disk and halo RR Lyraes via statistical parallax, and estimate the RR Lyrae-based distances to 18 Local-Group galaxies including the center of the Milky Way.