• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.225-225
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• 2011

The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.255-262
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• 1994

Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

• Journal of Life Science
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• v.23 no.4
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• pp.537-541
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• 2013

We analyzed glycerol using thin-layer chromatography (TLC) and compared the separation resolution of some mobile phases. When acetonitrile:distilled water (85:15 v/v) was used as a mobile phase, the band of glycerol on the TLC was more distinctly and rapidly separated. Using TLC analysis, we prepared a calibration curve for the glycerol concentration vs. the area of the glycerol band in which the glycerol concentration of the x-axis was converted into a log-scale ranging from 3.0 to 0.0625 (%, w/v). Based on this calibration curve, the residual glycerol concentration (0.2 [%, w/v]) in biodiesel was determined successfully using TLC analysis. When the results of the TLC analysis were compared with those of a chemical and enzymatic assay, the results were fairly similar. We conclude that TLC without additional analytical instruments can be used as an alternative method for the quantitative analysis of the concentration of glycerol in biodiesel.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.803-809
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• 2009

Notable blue shifts of the ν2 $C{\equiv}N$ stretching, $_{v4}$ C-C stretching and $_{v8}$ CCN deformation bands of $CD_3CN$ are observed upon solvation of $InCl_3$, resulting from the donor-acceptor interaction. The Raman spectrum in the $_{v2}$ region shows further details; at least two new bands emerge on the blue side of the $_{v2}$ band of free $CD_3CN$, whose relative intensities vary with concentration, suggesting that there exist at least two different cationic species in the solution. The strong hydrogen bonds formed between the methyl group and ${InCl_4}^-$ result in a large band appearing on the red side of the ν1 $CD_3$ symmetric stretching band. The solvation number of $InCl_3$, determined from the Raman intensities of the $C{\equiv}N$ stretching bands for free and coordinated $CD_3CN$, increases from $\sim$1.5 to $\sim$1.8 with decreasing concentration.

• Vacuum Magazine
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• v.4 no.1
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• pp.12-15
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• 2017

The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) is a 0.1 nm hard X-ray FEL which aims at providing photon flux higher than $1{\times}10^{12}$ photons/pulse using a 10-GeV electron linac. The vacuum system of the machine consists of an injector section including an S-band photocathode RF gun, 10-GeV electron linac section based on S-band normal conducting accelerating structures and a 150-m long out-vacuum undulator system. We introduce the present status of PAL-XFEL vacuum systems.

• Electrical & Electronic Materials
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• v.12 no.8
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• pp.18-23
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• 1999

InP 소자 기술은 밀리미터파 회로 제작에 지금까지 개발된 기술 중 가장 경쟁력 있는 기술로 InP HEMT와 HBT를 이용하여 100㎓ 이상의 회로가 만들어지고 있다. GaAs 소자 기술에 비해 InP 소자기술은 주파수 특성과 잡음특성, 집적도에 있어서 우수하나 반면에 V-band 이하의 주파수에서 전력특성이 나쁘며, 가격이 비싼 단점이 있다. V-band 이상의 고주파 대역에서 InP 소자기술은 대부분의 면에서 GaAs 소자기술을 능가하여 극초고주파에서 적용가능한 유일한 소자기술이 된다. 본 논문에서는 InP 소자 기술에 대한 기본적인 내용과 응용 예를 소개한다.

• Korean Journal of Environmental Biology
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• v.22 no.1
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• pp.213-219
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• 2004

The bacterial community of water stream, soil and guano in Gossi cave was examined by using PCR amplified the 16S rDNA-denaturing gradient gel electrophoyesis (DGGE). In this study, the genetic diversity and the similarity of bacterial community between open area and non - open area toy cave tour were investigated, and the seasonable variation pattern was compared each other. DGGE is attractive technique, as it sepayate same length dsDNA according to sequence variation typical 16S rDNA genes. The diversity and similarity of bacterial community in cave was analyzed by GC341f and PRUN518r primer sets foy amplification of V3 region of eubacteria 16S rDNA. The specific DGGE band profile of the cave water gives the possibility that the specific bacterial cell can be adapting to the specific cave environment and living in the cave. The DGGE band profiles of all samples with guano were compared and analyzed by image analyzer, in which mutual band profile was compared to be and the band intensity of guano was the highest. From these result, it is thought that the guano was main nutrient source and influenced on the community structure of the cave environment where is nutritionally limited. Pseudomonas sp. NZ060, Pseudomonas pseudoalcaligenes, uncultured Variovorax sp. and soli bacterium NS7 were identified to be on some sample from analysing DNA sequence of some DGGE band.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.174-174
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• 2003

ZnO는 상온에서 3.36 eV의 wide band gap과 60 meV의 큰 엑시톤 결합 에너지를 가지며, GaN(28 meV)와 ZnSe(19 meV)와 같은 wide band gap 재료와 비교해서 가장 우수한 exciton emission을 가진다. 이러한 특성 때문에 UV 레이저 및 LED와 같은 광학소자로서 그 응용의 잠재성이 높다. 박막의 우수한 광학적 특성과 결정성을 개선하기 위해 다양한 공정조건(RF 파워, 공정압력, 산소분압, 온도)에서 마그네트론 스퍼터링을 이웅하여 Si 기판상에 ZnO 박막을 성장 하였다. 또한, 저온 self-buffer를 이용하여 박막의 광학적 특성과 결정성을 더욱 개선 할 수 있었다. RF 파워와 공정압력은 박막의 PL(phothluminescehce) 특성이나 결정성에는 큰 영향을 주지 않았고 산소분압은 PL intensity의 변화를 가져왔으며, 온도는 결정성에 큰 영향을 주었다. 산소 분압이 증가 할수록 비화학량론적(산소 공공, 침입형 아연) 결함으로 인한 visiable 영 역의 peak 의 강도가 감소하는 것을 관찰하였다. 온도가 증가할수록 박막의 결정성에 나쁜 영향을 주었는데 저온 self-buffer를 도입하므로써 ZnO 박막의 결정성과 PL특성을 함께 개선하였다.