• Title/Summary/Keyword: V Band

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A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology

  • Jung, Seungyoon;Yun, Jongwon;Rieh, Jae-Sung
    • Journal of electromagnetic engineering and science
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    • v.15 no.4
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    • pp.232-238
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    • 2015
  • This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

The Study on Multi-band Mixer for Adaptive Radar (적응형 레이다를 위한 다중대역 혼합기에 관한 연구)

  • Go, Min-Ho;Kang, Se-Byeok
    • The Journal of the Korea institute of electronic communication sciences
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    • v.16 no.6
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    • pp.1053-1058
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    • 2021
  • This paper presents the multi-band mixer which converts a X-, K- and Ka-band adaptively by adjusting the gate-bias voltage of an active device. The proposed mixer presented a conversion loss of -10 dB at -0.8 V gate-bias voltage for X-band, a conversion loss of -9 dB at -0.3 V gate-bias voltage for K-band and for Ka-band, a conversion loss of -7 dB at -0.2 V gate-bias voltage under the LO power of +6.0 dBm. The 1dB compression point (P1dB) is +0.5 dBm for all band.

Studies on the High-gain Low Noise Amplifier for 60 GHz Wireless Local Area Network (60 GHz 무선 LAN의 응용을 위한 고이득 저잡음 증폭기에 관한 연구)

  • 조창식;안단;이성대;백태종;진진만;최석규;김삼동;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.21-27
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    • 2004
  • In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

Design of DC-DC Converter for Low-Voltage EEPROM IPs (저전압 EEPROM IP용 DC-DC Converter 설계)

  • Jang, Ji-Hye;Choi, In-Hwa;Park, Young-Bae;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.852-855
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    • 2012
  • A DC-DC converter for EEPROM IPs which perfom erasing by the FN (Fowler-Nordheim) tunneling and programming by the band-to-band tunneling is designed in this paper. For the DC-DC converter for EEPROM IPs using a low voltage of $1.5V{\pm}10%$ as the logic voltage, a scheme of using VRD (Read Voltage) instead of VDD is proposed to reduce the pumping stages and pumping capacitances of its charge pump circuit. VRD ($=3.1V{\pm}0.1V$) is a regulated voltage by a voltage regulator using an external voltage of 5V. The designed DC-DC converter outputs VPP (=8V) and VNN (=-8V) in the write mode.

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Multi-band Micropole Antenna Design Using Impedance Change (임피던스 변화를 이용한 다중대역 마이크로폴 안테나 설계)

  • Park, Jaehong;Kim, Hyunhee;Lee, Kyungchang;Hwang, Yeongyeun
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.1
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    • pp.110-115
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    • 2021
  • A multi-band, compact, and complex vehicle roof antenna has become important in terms of car exterior design and multi-functions which include Radio, DAB/DMB, SXM, GNSS, Telematics, and V2X. In this paper, we propose a compact multi-band V2X pole-type roof antenna. Using impedance change characteristic, a single pole antenna which has multiband such as radio, DAB/DMB, telematics, and V2X band is proposed. With two patch antennas for GNSS and SXM, the dimension of a multiband roof antenna is 131x63x37mm only.

Spatially Combined V-Band MMIC Coupled Oscillator Array in Waveguide (도파관 내에서 공간적으로 결합된 V-Band MMIC 결합 발진기 Array)

  • 최우열;김홍득;강경태;임정화;권영우
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.783-789
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    • 2002
  • In this paper, V-band MMIC coupled oscillator arrays are presented. In the proposed array, two push-pull patch antennas are synchronized by using strong electromagnetic coupling between two antennas. As a result, total size of the array is reduced and the array can be integrated in a single chip. To verify proposed array concept, two 1$\times$2 arrays are designed and fabricated using standard 0.15 um gate length pHEMT MMIC process. The circuits are mounted in an oversized waveguide and measured. The first array shows 0.5 dBm at 56.372 GHz and the second one has an output of 5.85 dBm at 60.147 GHz.

Compact Dual-band Double Dipole Quasi-Yagi Antenna with V-shaped Ground Plane (V-모양 접지면을 가지는 소형 이중 대역 이중 다이폴 준-야기 안테나)

  • Yeo, Junho;Lee, Jong-Ig
    • Journal of Advanced Navigation Technology
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    • v.22 no.5
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    • pp.436-441
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    • 2018
  • In this paper, a design method for a compact double dipole quasi-Yagi antenna with a V-shaped ground plane operating in dual bands including 2.45 GHz and 5 GHz wireless LAN frequency bands is studied. First, a quasi-Yagi antenna operating in the 2.45 GHz band is designed, and a V-shaped ground plane is used instead of a conventional strip ground plane to reduce the length of the antenna. A second dipole is connected to the dipole driver of the quasi-Yagi antenna for 2.45 GHz band and a director is appended for 5 GHz band operation. A prototype of the proposed dual-band antenna operating at 2.45 GHz WLAN band and 4.57-7.11 GHz band is fabricated on an FR4 substrate with a dimension of 40 mm by 55 mm. Fabricated antenna shows frequency bands of 2.33-2.75 GHz and 4.38-7.5 GHz for a voltage standing wave ratio less than 2. Measured gain remains more than 4 dBi in both bands.

Growth and photocurrent properties for the $AgInS_{2}$ epilayers by hot wall ep itaxy (Hot wall epitaxy 방법에 의한 $AgInS_{2}$ 박막의 성장과 광전류특성)

  • Hong, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.92-96
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    • 2002
  • A silver indium sulfide $(AgInS_{2})$ epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-ta-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$, and the spin orbit splitting, $\Delta_{so.}$ have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}(T)$, was determined.

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Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS (65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계)

  • Kim, Dong-Wook;Seo, Hyun-Woo;Kim, Jun-Seong;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.10
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    • pp.832-835
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    • 2017
  • In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

Feasibility Study on Tropospheric Attenuation Effect of Ku/V Band Signal for Korean Satellite Navigation System

  • Park, Jungkeun;Lee, Young Jae;Choi, Moonseok;Jang, Jae-Gyu;Sung, Sangkyung
    • International Journal of Aeronautical and Space Sciences
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    • v.17 no.1
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    • pp.80-88
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    • 2016
  • For next generation global navigation satellite systems, new carrier frequencies in Ku/V band are expected to emerge as a promising alternative to the current frequency windows in L band as they get severely congestive. In the case of higher frequency bands, signal attenuation phenomenon through the atmosphere is significantly different from the L band signal propagation. In this paper, a fundamental investigation is carried out to explore the Ku/V band as a candidate frequency band for a new global satellite navigation carrier signal, wherein specific attention is given to the effects of the dominant attenuation factors through the tropospheric propagation path. For a specific application, a candidate orbit preliminarily designed for the Korean regional satellite navigation system is adapted. Simulation results summarize that the Ku band can provide a promising satellite navigation implementation considering the present satellite's power budget, while the V band still requires technical advances in satellite transceiver system implementations.