• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.243.1-243.1
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• 2013

본 연구에서는 산소 분압과 열처리 온도에 따른 ITZO 박막 트랜지스터의 전기적 특성 향상을 목적으로 실험을 진행하였다. 1) ITZO 박막 증착 시 산소 분압 가변($O_2/(Ar+O_2)$ 30~40%), 열처리 온도 고정($350^{\circ}C$)과 2) ITZO 박막 증착 시 산소 분압 고정(30%), 열처리 온도($200{\sim}400^{\circ}C$)를 가변하여 실험을 진행하였다. 두 실험 모두 특성향상을 위해 산소 분위기에서 열처리를 진행하였다. 산소의 분압이 증가할수록 산소 빈자리를 채우면서 전자 농도가 감소하여 채널 전도 효과가 줄어들면서 Hump 현상이 발생하였고, 스윙이 증가, 문턱 전압이 음의 방향으로 이동하였다. 이에 $O_2/(Ar+O_2)$)의 30%에서 30%일때, 문턱전압은 1.98 V, 전계 효과 이동도는 28.97 $cm2/V{\cdot}s$, sub-threshold swing은 280 mv/dec, on-off 비율은 ~107로 가장 우수한 전기적 특성을 보였다. 또한 열처리 온도 가변 시 $400^{\circ}C$에서 전계 효과 이동도는 28.97 $cm^2/V{\cdot}s$로 $200^{\circ}C$의 전계 효과 이동도는 11.59 $cm^2/V{\cdot}s$에 비해 약 3배 증가하였고, 소자의 스위칭 척도인 sub-threshold swing은 약 180 mv/dec 감소하였다. 문턱 전압은 0.97V, on-off ratio는 약 107을 보였다. 동일한 산소 분압의 분위기에서 $400^{\circ}C$ 열처리 시 가장 우수한 전기적 특성을 보였고, 저온 공정으로 인한 플렉서블 디스플레이 투명 디스플레이 적용 가능성을 확인하였다.

• Horticultural Science & Technology
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• v.35 no.1
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• pp.46-58
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• 2017

This study was conducted to investigate the optimal conditions for spore germination, prothallus propagation, sporophyte formation and seedling growth in Microlepia strigosa (Thunb.) C. Presl. Spore germination and prothallus development were promoted by low concentrations of Knop medium nutrient solution. The optimal medium for prothallus propagation and antheridium formation was 2X MS medium with 3% sucrose. The activated charcoal content of the medium did not affect prothallus proliferation. Among the various combinations of culture soil (bedding soil, peat moss, perlite and decomposed granite), a mixture of bedding soil, peat moss and decomposed granite at a ratio of 1 : 1 : 1 (v : v : v) had a positive effect on sporophyte formation. The most efficient conditions for promoting the growth of whole plants (sporophyte seedlings) were 50 - cell plug trays filled with a mixture of bedding soil and decomposed granite at a 2 : 1 (v : v) ratio.

• Solar Energy
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• v.15 no.1
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• pp.3-11
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• 1995

Heat transfer phenomena during inward freezing process of the water in a horizontal cylinder were experimentally studied. The cooling temperature of a wall more significantly affects the timewise average temperature than the initial superheating temperature of the water. In addition, it was absolved that the timewise average temperature was influenced by the initial volume ratio of the water($V_l/V_{tot}$) at the same temperature conditons. One the other hand, the freezing speed of the upper part in the water-ice interface was quickly progressed due to natural convection. Furthermore, experimental observation showed that the frozen mass fraction($M_s/M_{tot}$) was influenced by the initial volume ratio of the water($V_l/V_{tot}$). It was noted that the frozen mass fraction for each $V_l/V_{tot}$ represented by $Ste^*$ and Fo.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• Tribology and Lubricants
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• v.24 no.1
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• pp.7-13
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• 2008

In this work, a simple and low cost sensor technique is proposed to test oil color in real time using in-line sensor. It is presented to use a ratio of intensity in red wavelength range to intensities of green and blue wavelength ranges (defined as a 'chromatic ratio') in order to estimate the oil color change. The proposed sensor technique is realized by irradiating a white LED as light source and a RGB color sensor as photoreceiver, and the chromatic ratio of various types of used oils are measured. The results show that chromatic ratio generally reflects chemical deterioration of oil, including oil oxidation and thermal degradation. It is concluded that the proposed sensor could be used for an effective oil monitoring technology.

• KSBB Journal
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• v.16 no.2
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• pp.128-132
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• 2001

Cyclodextrin glucanotransferase (EC 2.4.1.19 : 1,4-$alpha$-glucan 4-$alpha$-D-(1,4-glucano) transferase, cyclizing; CGTase) was recovered by starch adsorption. The adsorption and desorption of CGTase to starch was studied as a function of pH, temperature, and starch type. The optimal pH, temperature, and starch for adsorption were, 8.0, $4^{circ}C$, and 1% (w/v) corn starch, respectively, per 205 U/mL enzyme activity in the presence of 25% (w/v) ammonium sulfate. The maximum adsorption ratio was 95%. On the other hand, the optimal pH, temperature, and starch type for desorption were 8.0 (tris-buffer), $50^{circ}C$, and oxidized starch, respectively. The maximum desorption ratio was 98% by tris-buffer solution at pH 8.0. The efficiency of adsorption and desorption were affected slightly by the removal of cells from the fermentation broth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.25-26
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• 2008

Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and $450^{\circ}C$ in rapid thermal annealing, and those specific contact resistance investigated by using transmission line method. According to experimental results, the specific contact resistance between p-metal and GaAs was decreased as the V/III ratio was lower. These results indicate that Si doping concentration of GaAs increased as the vacancy of V-series of GaAs was high.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.609-615
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• 2005

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10 kHz decrease from 550 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kV/cm decrease from $1.64\times10^{-6}$ to $1.26\times10^{-7}\;A/cm^2$. In the results of hysteresis loops measured at $\pm170kV/cm$, the remanent polarization and the coercive field increase from 6.62 to $12.86{\mu}C/cm^2$ and from 32.15 to 56.45 kV/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying $10^9$ square pulses with $\pm5V$, the remanent polarization of the PLZT (10/40/60) thin film decreases $50\%$ from the initial state while that of the PLZT (10/0/100) thin film decreases $28\%$. In the results of retention measurements of 10s s, the remanent polarization of the PLZT (10/0/100) thin film dec.eases only $10\%$ from the initial state, while that of the PLZT (10/40/60) thin film decreases $40\%$.