• 제목/요약/키워드: V/C ratio

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박막전지용 Si/Mo 다층박막 음극의 전기화학적 특성 (Characterization of Si/Mo Multilayer Anode for Microbattery)

  • 이기령;정주영;문희수;이승원;이유기;박종완
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.209-209
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    • 2003
  • The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

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온도와 재령이 콘크리트의 동탄성계수와 정탄성계수의 상관관계에 미치는 영향 (Effect of Temperature and Aging on the Relationship between Dynamic and Static Elastic Modulus of Concrete)

  • 한상훈;김진근
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2001년도 가을 학술발표회 논문집
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    • pp.445-450
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    • 2001
  • The paper investigates the relationships between dynamic elastic modulus and static elastic modulus or compressive strength according to curing temperature, aging, and cement type. Based on this investigation, the new model equations are proposed. Impact echo method estimates the resonant frequency of specimens and uniaxial compression test measures the static elastic modulus and compressive strength. Type I and V cement concretes, which have the water-cement ratios of 0.40 and 0.50, are cured under the isothermal curing temperature of 10, 23, and 50 $^{\circ}C$. Cement type and aging have no large influence on the relationship between dynamic and static elastic modulus, but the ratio of dynamic and static elastic modulus comes close to 1 as temperature increases. Initial chord elastic modulus, which is calculated at lower strain level of stress-strain curve, has the similar value to dynamic elastic modulus. The relationship between dynamic elastic modulus and compressive strength has the same tendency as the relationship between dynamic and static elastic modulus. The proposed relationship equations between dynamic elastic modulus and static elastic modulus or compressive strength properly estimates the variation of relationships according to cement type, temperature, and aging.

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PECVD 질화막 증착시 $SiH_4/NH_3$ 유량비가 비휘발성 MNOS 기억소자의 특성에 미치는 영향 (The Influence of the $SiH_4/NH_3$ Ratios on the Characteristics of Nonvolatile MNOS Memories during the PECVD Silicon Nitride Film deposition)

  • 이상배;이근혁;이형옥;김진영;서광열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.832-834
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    • 1992
  • Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

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The Effects of the Somatic Cell Count on Yield, Composition and Coagulating Properties of Mediterranean Buffalo Milk

  • Tripaldi, C.;Terramoccia, S.;Bartocci, S.;Angelucci, M.;Danese, V.
    • Asian-Australasian Journal of Animal Sciences
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    • 제16권5호
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    • pp.738-742
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    • 2003
  • The monitoring was carried out for one year on 20 farms of Mediterranean buffalo situated in central Italy. The milk yield, the somatic cell count, the coagulating properties and some components were determined. The average value of somatic cells was $21.28n{\times}10^3/ml$. Milk production decreased when somatic cell numbers increased. The rennet clotting time increased significantly when somatic cells were higher than $300.00n{\times}10^3/ml$, the curd firming time was significantly higher when somatic cells were more than $1,000.00n{\times}10^3/ml$ and the curd firmness increased up to $200.00n{\times}10^3$/ml, then gradually decreased. Protein and casein decreased when somatic cells increased and the same trend was shown by casein/protein ratio. Both for these components and the coagulating properties the threshold limit of somatic cells to obtain better results was $200.00n{\times}10^3/ml$. The somatic cell number did not show a trend which was strictly influenced by the lactation stage, contrary to what happened in the other species.

접촉쌍성 AW UMa의 측광학적 연구 (PHOTOMETRIC STUDY OF CONTACY BINARY AW UMa)

  • 임조령;정장해
    • Journal of Astronomy and Space Sciences
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    • 제12권1호
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    • pp.44-53
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    • 1995
  • 충북대학교 천문우주학과의 35cm Schmidt-Cassegrain 망원경으로 접촉쌍성 AW UMa를 1994년 3월부터 4월 사이의 13일 밤 동안 BVRI 광전측광관측 하여 각 필터별로 273점씩 총 1092개의 관측점을 얻었다. 이 관측점들을 이용하여 BVRI 광도곡선을 그렸으며, 이로부터 주극심시각 JD Hel 2449456.1502 와 부극심시각 JD Hel 2449432.2412, JD Hel 2449447.1567을 결정하였다. 수집한 극심시각 자료들을 가지고 그린 O-C도에서, 공전주기 변화량 $-0.^d00000394$를 구하고 그에 해당하는 질량이동량 $-6.4\times10^{-7}M_\odot/year$를 계산하였다. AW UMA의 광도변화를 질량이동과 연관하여 해석할 수 있는 가능성을 제시했다.

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Etching Characteristics of Au Thin Films using Inductively Coupled CF4 / Cl2 / Ar Plasma

  • Kim Dong-Pyo;Kim Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제4권3호
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    • pp.1-4
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    • 2003
  • The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

R-면 사파이어 기판 위에 제작된 계단형 모서리 조셉슨 접합의 특성 (Fabrication and Characterization of Step-Edge Josephson Junctions on R-plane Al$_2O_3$ Substrates)

  • 임해용;김인선;김동호;박용기;박종철
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.147-151
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    • 1999
  • YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

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교정치료환자의 측모변화에 관한 두부방사선 계측학적 연구 (A ROENTGENOCEPHALOMETRIC STUDY OF PROFILE CHANCES IN ORTHODONTICALLY TREATED PATIENTS)

  • 최선웅
    • 대한치과교정학회지
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    • 제4권1호
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    • pp.21-29
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    • 1974
  • The purpose of the present study is to evaluate changes of the soft tissue relative to underlying skeletal elements during orthodontic treatment, and the influence of orthodontic treatment quantitatively on various regions of the facial profile. 59 Korean young women were selected, whose Hellman dental age was IV A, IV C and V A. Lateral cephalometric head films were taken before and after orthodontic treatment. From tracings, landmarks on skeletal and soft tissue profile were located, and then their linear and angular measurements were made directly. The results were obtained as follow: 1) Soft tissues of the facial profile were closely related and dependent on the underlying dentoskeletal frameworks. Orthodontic treament resulted in the reduction of dentofacial protrusion with both upper and lower lips becoming less procumbent during treament. 2) Thickness of the upper lip increased considerably during orthodontic treatment, and this change was related to maxillary incisor retraction. The ratio between the amount of maxillary incisor retraction and that of increment of upper lip thickness was approximately 5:3. 3) Soft tissue thickness overlying Downs' point A, point B and pogonion was not modified by orthodontic treatment. 4) Holdaway's H line, relating facial profile to the underlying dentoskeletal framework, seemed to be the most practical approach to soft tissue analysis.

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Photoalignment of Liquid Crystal on Silicon Microdisplay

  • Zhang, Baolong;Li, K. K.;Huang, H. C.;Chigrinov, V.;Kwok, H. S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.295-298
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    • 2003
  • Reflective mode liquid crystal on silicon (LCoS) microdisplay is the major technology that can produce extremely high-resolution displays. A very large number of pixels can be packed onto the CMOS circuit with integrated drivers that can be projected to any size screen. Large size direct-view thin film transistor (TFT) LCDs becomes very difficult to make and to drive as the information content increases. However, the existing LC alignment technology for the LCoS cell fabrication is still the mechanical rubbing method, which is prone to have minor defects that are not visible normally but can be detrimental if projected to a large screen. In this paper, application of photo-alignment to LCoS fabrication is presented. The alignment is done by three-step exposure process. A MTN $90^{\circ}$ mode is chose as to evaluate the performance of this technique. The comparison with rubbing mode shows the performance of photo-alignment is comparable and even better in some aspect, such as sharper RVC curve and higher contrast ratio.

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스퍼터된 바나듐 산화막의 광학적 특성에 미치는 진공 어닐링의 효과 (Effects of Vacuum Annealing on the Optical Properties of Sputtered Vanadium Oxide Thin Films)

  • 이승철;황인수;최복길;최창규;김성진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.783-786
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    • 2003
  • Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.

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