• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.140-148
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• 2000

In this paper, using surface micromachining technology with thick photoresist and aluminum, an SLM(Spatial Light Modulator), which is applied to the fields of adaptive optics and pattern recognition system, was fabricated and the electromechanical properties of the fabricated micro SLM are measured. In order to maximize fill-factor and remove mechanical coupling between micro SLM actuators, the micro SLM is composed of three aluminum layers so that spring structure and upper electrode are placed beneath the mirror plate, and $10\times10$ each mirror plate is individually actuated. Also, the micro SLM was designed to be able to modulate phase and amplitude of incoming light in order to have a continuity of phase modulation of incoming light. In the case of amplitude and phase modulation, maximum vertical displacement is 4$\mum$, and maximum angular displacement is $\pm4.6^{\corc}$ respectively. The height difference of the fabricated mirror plate was able to be reduced to 1100A with mirror plate planarization method using negative photoresist(AZ5214). The electromechanical properties of the fabricated micro SLM were measured with the optical measurement system using He-Ne laser and PSD(position sensitive device).

• Structural Engineering and Mechanics
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• v.42 no.5
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• pp.677-699
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• 2012

This article studies the secondary resonances of a clamped-clamped microresonator under combined electrostatic and piezoelectric actuations. The electrostatic actuation is induced by applying the AC-DC voltage between the microbeam and the electrode plate that lies at the opposite side of the microbeam. The piezoelectric actuation is induced by applying the DC voltage between upper and lower sides of piezoelectric layer. It is assumed that the neutral axis of bending is stretched when the microbeam is deflected. The drift effect of piezoelectric layer (the phenomenon where there is a slow increase of the free strain after the application of a DC field) is neglected. The equations of motion are solved by using the multiple scale perturbation method. The system possesses a subharmonic resonance of order one-half and a superharmonic resonance of order two. It is shown that using the DC piezoelectric actuation, the sensitivity of AC-DC electrostatically actuated microresonator under subharmonic and superharmonic resonances may be tuned. In addition, it is shown that the tuning domain of the microbeam under combined electrostatic and piezoelectric actuations at subharmonic and superharmonic conditions is larger than the tuning domain of microbeam under only the electrostatic actuation.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1850-1852
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• 2000

In this paper, new Partial Discharge (PD) detection technique using Pockels cell was proposed and considerable apparent chaotic characteristics were discussed. For this purpose, PD was generated from needle-plane electrode in air and detected by optical measuring system using Pockels cell, based on Mach-Zehnder interferometer, consisting of He-Ne laser, single mode optical fiber, 50/50 beam splitter and photo detector. A qualitative analysis was carried out by drawing Return map for the normalized time series of the detected PD signals. The results are as follows:(a) Fixed points, between 0.7 and 1.0, are appeared clearly in the right upper area of the return map as the increase in the number of obtained data.(b) Considerable periodicity have been remarked even though exact period and length can not be determined.(c) The self-similarity can be also observed inasmuch as the late paths do not follow the previous ones. Accordingly, exact quantitative analysis such as embedding dimension, fractal dimension, and Lyapunov exponents should be carried out for deducing the quantitative properties regarding PD phenomena.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.285-288
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• 1996

The electronic operation of the gas discharge tube is controlled by the electrical energy as sinusoidal waveform in arbitrary frequency range, or as a sequence of pulses at a wide range of duty cycle, the gas composition, the kind of electrode and the vessel geometry. In this paper, the pulsed mode operated gas discharge tube is composed with mixed gas of IIg-Ne ( 10 Torr ), in the tube of 15.0 mm outer diameter and has variable color from red to blue with changing frequency and pulse width in high voltage. As increasing pulse width and frequency in the gas discharge tube, the phenomenons that the electron temperature in the positive column increases and the radiation from atoms of higher upper state energy levels increases, exist. The color have the locus from red (0.4972, 0.3128) to blue (0.2736, 0.2619) in CIE chromacity diagram with increasing pulse width and frequency. The changing method of pulse width and frequency has been shown to be suitable for the luminous color control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.388-391
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• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• The Korean Journal of Physiology
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• v.3 no.1
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• pp.33-44
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• 1969

Electoromyographic studies were performed on the action of the muscles of the temporomandibular joints following exfoliation of the deciduous teeth. The subjects examined, being 50 children. between the age of 6 and 13 years, divided into 5 groups. They were; 1) Deciduous dentition were complete in the first group. 2) Deciduous incisors were missing in either upper or lower jaw in the second group. 3) Deciduous canine and molars were missing in the left side of either upper or lower jaw in the third group. 4) Deciduous canine and molars were missing in the right side of either upper or lower jaw in the fourth group. 5) Permanent dentition completed in the fifth group(except third molars). Electromyogram was recorded with 4 channel polygraph (Grass model VII modified for 7P3). Electrodes which were the cup-typed gold discs, 9 millimeters in the diameter, were located on the anterior, middle and posterior lobes of the temporal muscles, and also on the superficial and deep layers of the masseter muscles. Paired electrodes were held by electrode cream so that they were pressed on the skin surface at right angle, adhesive tape being used to anchor them. The distance of the pair electrodes was about 5 millimeters. The results obtained were as follow: 1) In rest position of mandible; All groups showed slight, electrical activities in the muscles involved, but in the middle lobe of temporal muscle they were slightly higher. 2) In molar occlusion of mandible; High activity-anterior lobe of temporal muscle and superficial layer of masseter muscle. Moderate activity-deep layer of masseter muscle. Low activity-middle and posterior lobes of masseter muscle. There were no differences among the first, the second and the fifth groups. In the third group the muscle activity was weaker than that of the right, and in the fourth group opposite characteristics was revealed. 3) In incisal bite of mandreble; Hight activity-superficial layer of masseter muscle. Modertae activity-deep layer of masseter muscle. Low activity-anterior, middle and posterior lobes of temporal muscle. The first, the third, the fourth and the fifth groups showed no differences but the second group showed less activity than those of others. 4) In protrusion of mandible; High activity-deep layer of masseter muscle Moderate activity-superficial layer of masseter muscle. Low activity-anterior, middle and posterior lobes of temporal muscle. In the first, the fourth and the fifth groups, there were no differences in the activities, but the second group showed less activity than the others. 5) In retrusion of mandible; High activity-deep layer of masseter muscle. Moderate activity-superficial layer of masseter muscle. Low activity-anterior, middle and posterior lobes of temporal muscle. In the first, the third, the fourth and the fifth groups, there were no differences but the second group showed less activity than the others. 6) In lateral excursion of the mandible (either direction); High activity-posterior lobe of temporal muscle. Moderate activity-anterior and middle lobes of temporal muscle. Low activity-superficial and deep layers of masseter muscle. The muscle action potentials were weaker than those of the right side in the third group and vice ver'sa in the fourth group. 7) In chewing movement; Temporal muscle activities were higher than those of masseter, especially in the middle lobe of temporal muscle the activity was highest. Right side muscle activities were higher than those of the left in the third group and, on the contrary, the left side was dominant over the right in the fourth group.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.480-480
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• 2008

Vacuum circuit breaker(VCB) is now emerging as an alternative of gas circuit breaker(GCB) which uses SF6 gas as insulating material whose dielectric strength is outstanding. But we have to reduce SF6 gas because SF6 gas is one of greenhouse gas and efforts to reduce greenhouse gas are now trend of the world. Therefore, we can say VCB is the optimal alternative of GCB because vacuum is environmentally friendly. The vacuum interrupter is the core part of VCB to interrupt arcing current. There are mainly two methods to extinguish arc. One is radial magnetic field (RMF) method and the other is axial magnetic field (AMF) method. We deals with RMF method in this paper. Compared with AMP, RMF arc quenching method has different principle to extinguish arc. In case of RMF method, pinch effect is much larger than AMF method. Because of pinch effect RMF type contact electrodes have the single large spot which is severly damaged and melted while AMF type contact electrodes have small and multiple spots which are slightly damaged and melted. To prevent contact electrode being damaged and melted from high temperature-arc, RMF method uses Lorentz force to move arc. In this paper we calculated and compared the arc driving force of two cases and we analyzed the force acting on each part of arc by means of commercial finite element method software Maxwell 3D. They have 3petals and we considered two cases. One is the case when fixed(upper) and movable(lower) contacts are in mirror arrangement (Case 1). The other is the case when one of two contacts (movable contact) is revolved at maximum angle as possible as it can be (Case 2). And at each case above, we analyzed arc driving force at two positions, position 1 is the closest to the center of contact and position 2 is near the edge of petal on fixed contact. As a result we could find that Case 2 generated stronger arc driving force than Case 1 at position 1. But at position 2 Case 1 generated stronger arc driving force than Case 2. This simulation method can contribute to optimizing spiral-type electrode designs in a view of arc driving force.