• 제목/요약/키워드: Up-down meanders

검색결과 2건 처리시간 0.016초

An Efficient Design of a DC-Block Band Pass Filter for the L-Band

  • Kaur, Avneet;Malhotra, Jyoteesh
    • Transactions on Electrical and Electronic Materials
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    • 제18권2호
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    • pp.62-65
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    • 2017
  • In this paper, three DC Block designs are presented which efficiently meet the need of modern-day compactsize wireless communication systems. As one of the important parts of a complete system design, the proposed microstrip-based DC block with coupled transmission lines efficiently attenuates unwanted frequencies that cause damage to the system. The compact-sized DC block structures are created by incorporating an extended coupled-line section with a radial stub, an enveloped coupled-line section, and using alternate up-down meandering techniques. The structures are analyzed for the L-Band using a high-resistive silicon substrate. At a resonating frequency of 1.575 GHz, the designed DC Block structures have a return loss better than -10 dB, an insertion loss of around -1 dB, and also possess wide pass-band characteristics.

A Novel Stiff Membrane Seesaw Type RF Microelectromechanical System DC Contact Switch on Quartz Substrate

  • Khaira, Navjot K.;Singh, Tejinder;Sengar, Jitendra S.
    • Transactions on Electrical and Electronic Materials
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    • 제14권3호
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    • pp.116-120
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    • 2013
  • This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.