• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.380.2-380.2
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• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• 한국재료학회지
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• 제27권10호
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• pp.524-529
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• 2017

The effect of strain aging on the tensile properties of API X70 linepipe steel was investigated in this study. The API X70 linepipe steel was fabricated by controlled rolling and accelerated cooling processes, and the microstructure was analyzed using optical and scanning electron microscopes and electron backscatter diffraction. Strain aging tests consisting of 1 % pre-strain and thermal aging at $200^{\circ}C$ and $250^{\circ}C$ were conducted to simulate U-forming, O-forming, Expansion(UOE) pipe forming and anti-corrosion coating processes. The API X70 linepipe steel was composed of polygonal ferrite, acicular ferrite, granular bainite, and bainitic ferrite whose volume fraction was dependent on the chemical composition and process conditions. As the thermal aging temperature increased, the steel specimens showed more clearly discontinuous type yielding behavior in the tensile stress-strain curve due to the formation of a Cottrell atmosphere. After pre-strain and thermal aging, the yield and tensile strengths increased and the yield-to-tensile strength ratio decreased because yielding and aging behaviors significantly affected work hardening. On the other hand, uniform and total elongations decreased after pre-strain and thermal aging since dislocation gliding was restricted by increased dislocation density after a 1 % pre-strain.

• 한국광물학회지
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• 제17권2호
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• pp.123-133
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• 2004

포항지역 제3기 해성퇴적층에서 산출되는 탄산염광물의 특성을 밝히기 위하여 음극선 발광현미경 관찰과 화학분석을 실시하였다. 발광현미경은 보통의 편광 현미경으로는 관찰할 수 없는 정보를 제공해 준다. 사암의 탄산염 교질물 내에서, 편광현미경하에서는 나타나지 않는 유공충의 형태와 마름모꼴로 자란 돌로마이트 형태들이 음금선 발광현미경하에서는 명확히 나타난다. 화학분석 결과, 발광은 탄산염 광물 내의 망간 성분과 칠 성분에 의해서 나타난다. 그러나 돌로마이트 내의 철성분이 10,000 ppm을 넘게 되면 발광은 사라진다. 산출되는 돌로마이트는 칼슘 성분이 많은 것이 특징이며, $60～70^{\circ}C$의 초기 속성작용 단계에서 생성된 것으로 생각된다.

• 한국재료학회지
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• 제9권2호
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• pp.173-180
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• 1999

Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

• 한국표면공학회지
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• 제41권6호
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• pp.255-263
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• 2008

Generally, deposition mechanism of diamond particle is mainly embedding effect in the kinetic spray process. Accordingly, in spite of high cost, helium gas was employed as process gas to get high diamond fraction in the composite coating. In this study, the deposition behavior of bronze/diamond by kinetic spray process was compared using different process gas (helium and nitrogen). Bare (mean size of $5{\mu}m$, $20{\mu}m$) and nickel coated diamond (mean size of $26{\mu}m$) were deposited on Al 6061-T6 substrate with fixed process temperature and pressure. For comparison with experimental results, plastic deformation behavior of nickel layer was simulated by finite element analysis (using ABAQUS/Explicit 6.7-2). The size, broken ratio, and fraction of diamond in the composite coating were analyzed through scanning electron microscopy and image analysis method. The uniform distribution and deposition efficiency of diamond particles in the coating layer could be achieved by tailoring the physical properties of the feedstock.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.149-149
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• 2017

Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the seawater upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification showed a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

• Current Photovoltaic Research
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• 제1권2호
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.