• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.244-251
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• 1992

Buried Bragg filters of single mode $Si_{3}N_{4}$ rib waveguide with a cover layer of $SiO_{2}$ and grating at the interface of $Si_{3}N_{4}$ and $SiO_{2}$ are designed and fabricated. Etching of the grating on $Si_{3}N_{4}$ waveguide core by buffered HF showed uniform etching with good control up to 1 nm. This buried type of Bragg filters are immune to contamination of the surface of device. The mode index and bandwidth of filters are determined by measurements of the transmission spectrum of Bragg filters and compared with that of calculation. Waveguide Bragg filters loaded with the micro-heater of Cr film and the cladding of silicone rubber are made to control the Brag wavelength of the filter. As a result the filter wavelength of the device moved by 0.41 nm for 10 mA current to the shorter side of wavelength proportional to the square of the current.

• Corrosion Science and Technology
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• v.16 no.6
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• pp.285-293
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• 2017

The effects of sulfate reducing bacteria (SRB) on the corrosion and scaling of the Q235 carbon steel has been investigated in the simulated sewage water and oil field gathering pipelines production water, using scanning electron microscopy (SEM), energy dispersive x-ray spectrometry (EDS), and three-dimensional stereoscopic microscope. Results indicated that the concentration of SRB reached the maximum value on the ninth day in simulated sewage water with a large amount of scaling on the surface of specimen. In oil field gathering pipelines, a large amount of scaling and mineralization of mineral salts and thick deposition of extracellular polymeric substance (EPS) layers were also observed on the surface of specimen. The thickness of biofilm was about $245{\mu}m$ within 30 days. After adding microbicides, the thickness of corrosion products film was only up to $48-106{\mu}m$ within 30 days, suggesting that SRB could induce biomineralization. Under-deposit corrosion morphology was uniform in the absence of microbicides while local corrosion was observed in the presence of microbicides.

• The Journal of the Korea Contents Association
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• v.13 no.7
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• pp.38-50
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• 2013

This paper analyzes director Yang Yong-hi's documentary films "Dear Pyongyang"(2006), "Goodbye, Pyongyang"(2009) and her fiction film "Our Homeland"(2012). These films were produced on the base of the director's autobiographical experience, and raise issue of Jainichi-Korean diaspora who be caught in nation-state; North Korea, South Korea and Japan. With the family narratives crossing Jeju, Osaka, and Pyongyang, these films doubt boundaries be set by nation-state, and seek new breakout space. This paper traces restructuring identity in the tensional heterogeneity of nation-state exaction; Integration, unity, uniform education. In conclusion, these films foresee Korean diaspora's future identity from hybrid identities. It shows Korean diaspora's potential of receptivity, openness and solidarity which are required for Northeast Asian peace and the solution of two Korea's hostility.

• Journal of the Korean Society of Costume
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• v.57 no.8
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• pp.14-23
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• 2007

The purpose of this study was to investigate the present condition of cold protective clothing for mailman, to improve its design in movement, fitness, and other functions, and supply basic data for its performance evaluation. The results are as follows : The 46.60% of those questioned did not satisfy current clod protective clothing fer mailman. Especially, they considered dissatisfactory in properties such as waterproof, comfort, activity, and sweat absorption. The newly developed cold protective clothing is two-piece style composed of jacket and pants. Both jacket and pants are composed of inner and outer clothing individually. In both jacket and pants, their outer clothing's material was waterproof, windproof, and breathable shell fabric on which PTFE film laminated and their inner clothing's material was 100% polyester Polar polis to have better insulation property. The jacket has attachable cap which can be used as rain gear and set-in sleeve with stand collar. It also had big outside patch pockets and side seam pockets to ensure enough storage space. The pants have knee pads to give free movement to knees and slant side pockets. Inner clothing of both jacket and pants can be worn during working inside without out clothing. Insulation of the newly developed cold protective clothing was not better than current one except right hand, left hand and left foo. It is considered that is because thickness of material is the most important factor to influence insulation.

• ETRI Journal
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• v.16 no.1
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.503-509
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• 2013

In this study, $Cu(In_{1-x},Ga_x)Se_2$ (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process, selenization rapid thermal process(RTP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make CIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several CIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 min has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 min show good crystalline growth without any voids.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.528-532
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• 2002

Anodic $TiO_2$film on Ti substrate was fabricated at 180V in sulfuric acid solutions containing phosphoric acid and hydrogen peroxide. Effects of the anodizing conditions on the morphology of the oxide layers, and chemical states of the component elements of the layers were studied primarily using SEM, XRD, AFM, and XPS. The pores in the oxide layer was not uniform in size, shape, and growth direction particularly near the interface between the substrate and the oxide layer, compared with those of the surface layer. The formation of irregular type of pores seemed to be attributed to spark discharge phenomena which heavily occurred during increasing the anodic voltage. The pore diameter and the cell size increased, and the number of cells per unit area decreased with the increasing time. From the XPS results, it was shown that component elements of the electrolytes, P and S, existed in the chemical states of $PO_4^{-3}$ , $P_2$$O_{5}$, $SO_4^{-2}$ , $SO_3^{-2}$ , P, S, etc., which were penetrated from the electrolytes into the oxide layer during anodization.

• Journal of Surface Science and Engineering
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• v.49 no.4
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• pp.331-338
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• 2016

In this work, anodic oxidation behavior of AZ31 Mg alloy was studied as a function of $Na_2CO_3$ concentration in electrolyte by voltage-time curves and observation of surface appearances and morphologies after the anodic treatments, using optical microscopy and confocal scanning laser microscopy (CSLM). The voltage-time curves of AZ31 Mg alloy surface and surface appearances after the anodic treatments showed three different regions with $Na_2CO_3$ concentration : region I, below 0.2 M $Na_2CO_3$ where shiny surface with a number of small size pits; region II, between 0.4 M and 0.6 M $Na_2CO_3$ where dark surface with relatively low number of large size burned or dark spots; region III, more than 0.8 M $Na_2CO_3$ where bright surface with or without large size dark spots were obtained. The anodically treated AZ31 Mg alloy surface became significantly brightened with increasing $Na_2CO_3$ concentration from 0.5 M to 0.8 M which was attribute to the formation of denser and smoother surface films. Pits and porous protruding reaction products were found at relatively large size and small size spots, respectively, on the AZ31 Mg alloy surface in low concentration of $Na_2CO_3$ less than 0.2 M. The formation of pits is attributed to the result of repetition of the formation and detachment of porous anodic reaction products. Based on the experimental results obtained in this work, it is concluded that more uniform, denser and smoother surface of AZ31 Mg alloy could be obtained at more than 0.8 M $Na_2CO_3$ concentration if there is no other oxide forming agent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.