• Journal of Surface Science and Engineering
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• v.57 no.1
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• pp.14-21
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• 2024

For this study, CrAlN multilayer coatings were deposited on SKD61 substrates using a multi-arc ion plating technique. The structural characteristics of the CrAlN multilayer coatings were evaluated using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Additionally, the adhesion of the coatings was assessed through scratch testing, and the mechanical strength was evaluated using nanoindentation and tribometric tests for frictional properties. The results show that the CrAlN multilayer coatings possess a uniform and dense structure with excellent mechanical strength. Hardness measurements indicated that the CrAlN coatings have high hardness values, and both the coating adhesion and wear resistance were found to be improved compared to CrN. The addition of aluminum is anticipated to contribute to enhanced durability and wear resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.169-174
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• 2024

In this study, the structural, electrical, and optical properties of AZO films of various thicknesses are compared. The AZO films were deposited on a glass substrate by FTS (Facing-Target-Sputtering) This research was conducted to find the optimal thickness for Transparent Conductive Oxide (TCO). AZO has suitable properties for TCO such as low resistivity, and high transmittance. Thin films of all thicknesses showed a transmittance of over 80% in the visible light region and electrical properties improved as thickness increased. It was confirmed that the film of 300 nm thick had the best performance due to its low resistivity, and uniform surface. This research is expected to help find optimal conditions in various fields where TCO is used, such as solar cells, displays, and sensors in the future.

• Applied Chemistry for Engineering
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• v.5 no.5
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• pp.819-824
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• 1994

A membrane-like $H_3PMo_{12}O_{40}$-polysulfone film was prepared by blending $H_3PMo_{12}O_{40}$ with polysulfone using dimethylformamide as a common solvent. SEM and EDX analysis showed that $H_3PMo_{12}O_{40}$ was uniformly and finely distributed in the film catalyst. The ESCA measurement also revealed that the oxidation state of Mo was not changed. The $H_3PMo_{12}O_{40}$-polysulfone catalyst showed lower activity for acid-catalyzed reaction and higher activity for oxidation reaction than $H_3PMo_{12}O_{40}$ in ethanol conversion reaction. The oxidation activity of the film catalyst was about 10 times higher than $H_3PMo_{12}O_{40}$. The decrease of acidic activity was due to DMF strongly adsorbed in acid sites of $H_3PMo_{12}O_{40}$, whereas the increase of oxidation activity was mainly due to uniform distribution of $H_3PMo_{12}O_{40}$. Adsorption results showed that the surface character of $H_3PMo_{12}O_{40}$ was drastically increased, while the bulk property of that was almost same after blending. It is suggested that the control of surface/bulk property as well as acid/redox property of heteropoly acid would be possible by blending it with a polymer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of Dental Rehabilitation and Applied Science
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• v.24 no.4
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• pp.361-369
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• 2008

The purpose of this study is to make porous oxide film on the surfaces of pure Ti through anodic spark discharge in electrolytic solution containing calcium and phosphate ions, to improve osseointergration by treating fluoride agent. In addition, it is to evaluate the fluoride modified effect on the surface. Commercial pure Ti plate with $20{\times}10{\times}2mm$ and Ti wire with a diameter of 1.5mm and a total length of 15mm were used. After making titanium oxide films converted by anodic spark discharge, anodizing was performed. Fluoride was spreaded to titanium laboratory plate and maintained for 30 minutes after anodizing breakdown. Fluoride ion discharge amount was measured per 24 hours after dipping titanium plate into saline (10ml) and sustaining 90rpm in a pyrostat. Some plates and wires were dipped in Hanks solutions for a month to examine biocompatibility using SEM and XRD. $TiO_2$ film formed by anodic discharge technique showed great roughness and uniform pores which were $1{\sim}3{\mu}m$ in a diameter. Roughness of the films treated with anodic discharge after blasting were higher than the turned ones(P<0.05). Rapid surface activity was observed in the samples treated with $TiF_3$ agent, which immersed in Hanks solution for 30 days. Taking the results into consideration, the fluoride modified implant with anodic discharge demonstrates that it makes uniformly porous oxide film on the surface of implant and properly increase roughness for osseointegration. The implants will achieve greater bone integration after short healing time by improving surface activity.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.168-173
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• 2005

Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.

• The Journal of Korean Society for Radiation Therapy
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• v.21 no.1
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• pp.17-23
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• 2009

Purpose: In treating head and neck cancer, it is very important to irradiate uniform dose on the junction of the bilateral irradiation field of the upper head and neck and the anterior irradiation field of the lower neck. In order to improve dose distribution on the junction, this study attempted to correct non uniform dose resulting from under dose and over dose using the field-in-field technique in treating the anterior irradiation field of the lower neck and to apply the technique to the treatment of head and neck cancer through comparison with conventional treatment. Materials and Methods: In order to examine dose difference between the entry point and the exit point where beam diffusion happens in bilateral irradiation on the upper head and neck, we used an anthropomorphic phantom. Computer Tomography was applied to the anthropomorphic phantom, the dose of interest points was compared in radiation treatment planning, and it was corrected by calculating the dose ratio at the junction of the lower neck. Dose distribution on the junction of the irradiated field was determined by placing low-sensitivity film on the junction of the lower neck and measuring dose distribution on the conventional bilateral irradiation of the upper head and neck and on the anterior irradiation of the lower neck. In addition, using the field-in-field technique, which takes into account beam diffusion resulting from the bilateral irradiation of the upper head and neck, we measured difference in dose distribution on the junction in the anterior irradiation of the lower neck. In order to examine the dose at interest points on the junction, we compared and analyzed the change of dose at the interest points on the anthropomorphic phantom using a thermoluminescence dosimeter. Results: In case of dose sum with the bilateral irradiation of the upper head and neck when the field-in-field technique is applied to the junction of the lower neck in radiation treatment planning, The dose of under dose areas increased by 4.7~8.65%. The dose of over dose areas also decreased by 2.75~10.45%. Moreover, in the measurement using low-sensitivity film, the dose of under dose areas increased by 11.3%, and that of over dose areas decreased by 5.3%. In the measurement of interest point dose using a thermoluminescence dosimeter, the application of the field-in-field technique corrected under dose by minimum 7.5% and maximum 17.6%. Thus, with the technique, we could improve non.uniform dose distribution. Conclusion: By applying the field-in-field technique, which takes into account beam divergence in radiation treatment planning, we could reduce cold spots and hot spots through the correction of dose on the junction and, in particular, we could correct under dose at the entry point resulting from beam divergence. This study suggests that the clinical application of the field-in-field technique may reduce the risk of lymph node metastasis caused by under dose on the cervical lymph node.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.388-388
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• 2016

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.