• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.679-685
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• 2004

Although the electrophoretic deposition method has the advantage of simple processing procedure, less fabrication facilities, and easier control for deposition thickness and wire length, providing economical and technical merits, it also has the disadvantages of cracking and porosity phenomena, requiring an improved processing method for higher particle density and constant particle orientation. we have developed an optimization method to increase the particle density and to unify its orientation, and have performed a study to overcome the cracking and porosity problems in the fabricated superconductor. In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternate voltage vertically has been developed for the first time and applied to the electrophoretic deposition process. The applied alternate electric field caused a force to be exerted on each YBCO particle and resulted in a rotation of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. We name this process as the shaky-aligned electrophoretic deposition method. For commercial utilization and efficiency, in this dissertation, alternating voltage of 60 Hz and 25 ∼ 120 V/cm was proposed to apply it as a subsidiary source for shaky-flow deposition so that the fabricated thin film showed uniform surface morphology with less voids and cracks and Tc,zero of 90 K and the critical current density of 3419 A/$cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.88-94
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• 2019

Triplet-triplet annihilation upconversion (TTA-UC) is a photochemical process wherein two or more low-energy photons are converted to a high-energy photon through a special energy transfer mechanism. Herein, we report a strategy to enhance the efficiency of TTA-UC through the light-scattering effect induced by silica microparticles (SM) embedded in polymeric thin films. By incorporating monodisperse uniform silica microparticles with a uniform size of 950 nm synthesized by $St{\ddot{o}}ber$-based seeded growth method into UC polymeric thin films, the UC intensity in the 430-570 nm range was enhanced by as much as 64% when irradiated by 635 nm laser. Analyzing the lifetime of PdTPBP phosphorescence revealed that the presence of SM in the UC layer does not affect triplet-triplet energy transfer (TTET) between sensitizers and acceptors, supporting the enhancement of TTA-UC originated from the light-scattering effect. On the other hand, the incorporation of SM in UC layer is shown to enhance the triplet-triplet annihilation (TTA) efficiency, which results in a 1.5-fold increase of the ${\Phi}_{UC}$, by scattering light source and thus increasing the number of excited photons to be utilized in TTA-UC process.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.119-125
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• 2020

Transition metal dichalcogenides (TMDCs), two-dimensional atomic layered materials with direct bandgap in the range of 1.1-2.1 eV, have attracted a lot of research interest due to their high response to light and capability to build new types of artificial heterostructures. However, the large-area synthesis of high-quality and uniform TMDC films with vertical-stacked heterostructure still remains challenge. In this study, we have developed a metal-organic chemical vapor deposition (MOCVD) system for TMDCs and conducted a systematic study on the growth of single-layer TMDCs and their heterostructures. In particular, using a bubbler-type organometallic compound sources, the concentration and flow rate of each source can be precisely controlled to obtain uniformly single-layered MoS2 and WS2 films over the centimeter scale. In addition, the MoS2/WS2 vertical heterostructure was achieved by growing WS2 film directly on the MoS2 film, as confirmed by electron microscopy, UV-visible spectrophotometer, Raman spectroscopy, and photoluminescence spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.181-181
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• 2012

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the evidences for two different growth modes of graphene on Cu investigated by varying carbon feedstock (C2H2 and CH4) and working pressure. The number of uniform graphene layer grown by C2H2 increased with increasing its injection time. A combined secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) study revealed a carbon-diffused Cu layer created below surface region of Cu substrate with the expansion of Cu lattice. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Based on various previous results and ours, we have successfully found that there are two selective growth modes for graphene on Cu substrate, and a desired mode can be chosen by tuning working pressure corresponding to the kind of carbon feedstock. We believe that this finding will shed light on high quality graphene growth and its multifaceted applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.242-245
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• 2014

In order to increase the thickness uniformity in chemical vapor depositon of silicon carbide, we have carried out CFD studies for a CVD apparatus having a horizontally-rotated 3-stage susceptor. We deposited silicon carbide films of 3C-SiC phase showing quite uniform thickness between stages but not uniform one in the stage. The cause of this nonuniformity is thought to be originated from the high rotational speed. And the uniformity between stages can be further increased with the $120^{\circ}$ split type nozzles from CFD results. Through the formation of silicon carbide film on graphite substrates we can make oxidation-resistant and dust-free graphite components with high hardness for the semiconductor applications.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.91-95
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• 2010

A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit $TiO_2$ thin films on Si substrates using titanium isopropoxide(TIP) and $H_2O$ as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure $TiO_2$ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality $TiO_2$ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal $TiO_2$ coats into deep trenches with high aspect ratio.

• Journal of Electrochemical Science and Technology
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• v.14 no.1
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• pp.85-95
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• 2023

In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li₇La₃Zr₂O₁₂, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10^-3 S cm^-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li⁺ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li⁺ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO₄ (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g^-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.