• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.42 no.1
• /
• pp.95-103
• /
• 1997

This experiment was carried out to obtain the basic information necessary to establish suitable postharvest handling techniques and to keep high quality of the sweet(Danok 2), supersweet(Cooktail 86) and waxy(Chalok 1) corn which are mainly consumed as vegetable in Korea. Vegetable corns were cooled with ice fragments in the insulation box immediately after harvest and stored in low temperature warehouse at 0 to 2$^{\circ}C$. During the 15 days short-term storage, changes of chemical components were compared with those of uncooled corns. The losses of moisture in kernels were as high as 7.4 to 24.4％ in uncooled corns while those of ice cooled corns increased 0.4 to 0.5％ of their weight. The ratio of pericarp and alcohol insoluble solid(AIS) content increased as the storage days prolonged in all treatments but increasing rates were much higher in uncooled samples. On the other hand, the total sugar loss during storage was the least in supersweet corn when they were cooled with ice fragments in insulation box. After 5 days storage, the ice cooled samples showed the highest free amino acid contents compare to those of uncooled and stored at room temperature (25 to 3$0^{\circ}C$) or low temperature warehouse, and ${\gamma}$-aminobutylic acid (GABA) which was known as a fuctional amino acid was detected in all three kinds of vegetable corns.

• Proceedings of the Korea Institute of Convergence Signal Processing
• /
• 2003.06a
• /
• pp.226-229
• /
• 2003

본 논문은 Uncooled DFB-LD를 광원으로 사용하는 일반적인 8채널 구조의 CWDM시스템에 대해 메트로 파장대를 사용하여 최대 15채널까지 증설이 가능한 시스템 구조에 대한 제안 및 특성을 시뮬레이션 하였다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.7
• /
• pp.185-197
• /
• 1996

We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Journal of Sensor Science and Technology
• /
• v.18 no.4
• /
• pp.301-306
• /
• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• Journal of Sensor Science and Technology
• /
• v.25 no.5
• /
• pp.349-353
• /
• 2016

Recently, research on bolometer-type uncooled infrared image sensor which is made for industrial applications has been increasing. In general, it is difficult to calibrate fixed pattern noise (FPN) of bolometer array. In this paper, average-current calibration algorithm is presented for reducing bolometer resistance offset. A resistor which is produced by standard CMOS process, on the average, has a deviation. We compensate for deviation of each resistor using average-current calibration algorithm. The proposed algorithm has been implemented by a chip which is consisted of a bolometer pixel array, average current generators, current-to-voltage converters (IVCs), a digital-to-analog converter (DAC), and analog-to-digital converters (ADCs). These bolometer-resistor array and readout circuit were designed and manufactured by $0.35{\mu}m$ standard CMOS process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.148-149
• /
• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• Korean Journal of Optics and Photonics
• /
• v.24 no.4
• /
• pp.189-195
• /
• 2013

An F/1.2 infrared optical system that involves two aspheric BD-2 lenses and an aspheric diffractive surface was designed over $8-14{\mu}m$ with a field angle of $15.2^{\circ}$. The system may be used in uncooled cameras and is analyzed using beam synthesis propagation (BSP). The diffractive surface is modeled as a physical surface with a given thickness, and results are compared with those obtained by conventional methods, such as the exit-pupil method and a method which superposes diffraction orders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.11
• /
• pp.1005-1009
• /
• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• Journal of Sensor Science and Technology
• /
• v.27 no.6
• /
• pp.357-361
• /
• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.