• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.28-33
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• 2006

An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.26-34
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• 2007

This Paper describes a chip design technique for body composition analyzer based on the BIA (Bioelectrical Impedance Analysis) method. All the functions of signal forcing circuits to the body, signal detecting circuits from the body, Micom, SRAM and EEPROMS are integrated in one chip. Especially, multi-frequency detecting method can be applied with selective band pass filter (BPF), which is designed in weak inversion region for low power consumption. In addition new full wave rectifier (FWR) is also proposed with differential difference amplifier (DDA) for high performance (small die area low power consumption, rail-to-rail output swing). The prototype chip is implemented with 0.35um CMOS technology and shows the power dissipation of 6 mW at the supply voltage of 3.3V. The die area of prototype chip is $5mm\times5mm$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.52-58
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• 2007

This paper describes the PLL of TCON(Timing Controller) chip for FPD(Flat Panel Display). The recent TCON requires wide range frequency operation of $8\sim135MHz$ in PLL. In order to be satisfied this requirement the new V-I converter.circuit. The V-I converter of new architecture increased the minimum/maximum current ratio which widens the operation frequency range of VCO's md also guaranteed linearity of VCO's. The proposed PLL circuits in FPD TCON show the measuring performance of loops RMS jitter in the range of $8\sim135MHz$. The designed circuit was fabricated in 1-ploy 3-metal 0.25um TSMC process technology and has a operation range or $8\sim135MHz$ with 2.5V power.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.2
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• pp.256-261
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• 2011

In this paper, a design and an implementation of an Analog to Digital (A/D) converter are introduced for the conversion of monitored battery cell voltage in the cell voltage monitoring(CVM) system in battery management system(BMS), which is one of the key devices of ECO hybrid cars. The A/D converter in CVM system required a middle conversion speed and a high resolution, therefore, a successive approximate register(SAR) typed A/D converter with 10 bits resolution has been designed and implemented using Magna 0.6um 40V process. The measurement result which kept ${\pm}1$ LSB accuracy in the full scale range(FSR) of 5V, showed the usefulness of the SAR typed A/D converter in realizing a CVM system.

• 전자공학회논문지 IE
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• v.47 no.4
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• pp.1-9
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• 2010

This paper describes a ultrasonic signal processing front-end IC for distance range meter and body detector. The burst shaped ultrasonic signal is generated by a self oscillator and its frequency range is about 40[kHz]-300[kHz]. The generated ultrasonic signal transmit through piezo resonator. The another piezo device transduce from received ultrasonic signal to electrical signals. This front-end IC contained low noise amplifier, band pass filter, busrt detector and time pulse generator and so on. This IC has two type of new idea for improve function and performance, which are self frequency control (SFC) and Variable Gain Control amplifier (VGC) scheme. The dimensions and number of external parts are minimized in order to get a smaller hardware size. This device has been fabricated in a O.6[um] double poly, double metal 40[V] High Voltage CMOS process.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.309-315
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• 1998

This paper describes an 8b 52 MHz CMOS subranging analog-to-digital converter (ADC) for Integrated Services Digital Network (ISDN) applications. The proposed ADC based on the improved time-interleaved architecture removes the holding time which is typically observed in the conventional double-channel subranging ADCs to increase throughput rate. Moreover, the ADC employs the interpolation technique in the back-end subranging ADCs far residue signal processing to minimize die area and power consumption. The fabricated and measured prototype ADC in a 0.8 um n-well double-poly double-metal CMOS process typically shows a 52 MHz sampling rate at a 5 V supply voltage with 230 mW, and a 40 MHz sampling rate at a 3 V power supply with 60 mW power consumption.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.165-173
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• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.26-33
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• 2010

This paper presents a multi-channel capacitive touch sensing unit for SoC applications. This unit includes a simple common processing unit and switch array to detect the touch sensing input by capacitive-time(C-T) conversion method. This touch sensor ASIC is designed based on the Capacitive-Time(C-T) conversion method to have advantages of small current and chip area, and the minimum resolution of the unit is 41 fF per count with the built-in sensing oscillator, LDO regulator and $I^2C$ for no additional external components. This unit is implemented in 0.18 um CMOS process with dual supply voltage of 1.8 V and 3.3 V. The total power consumption of the unit is 60 uA and the area is 0.26 $mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.31-39
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• 2009

This paper presents the single supply power line communication(PLC) SoC ASIC with built-in analog frond-end circuit. To achieve the low power consumption along with low chip cost, this PLC SoC ASIC employs fully CMOS analog front-end(AFE) and several built-in Regulators(LDOs) powering for Core logic, ADC, DAC and IP Pad driver. The AFE includes RX of pre-amplifier, Programmable gain amplifier and 10 bit ADC and TX of 10bit Digital Analog Converter and Line driver. This PLC Soc was implemented with 0.18um 1 Poly 5 Metal CMOS process. The single power supply of 3.3V is required for the internal LDOs. The total power consumption is below 30mA at standby and 300mA at active which meets the eco-design requirement. The chips size is $3.686\;{\times}\;2.633\;mm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.3
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• pp.273-277
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• 2005

We prepared $0.25\~l.5um$ poly silicon gate array test group with $SiO_2$ spacers in order to employ NiCo composite salicide process from 15nm Ni/15nm Co/poly structure. We investigate the residual metal shape evolution by varying the rapid thermal silicide anneal temperature from $700^{\circ}C\;to\;1100^{\circ}C$. We observed the residual metals agglomerated into maze type and line type on $SiO_2$ field and silicide gate, respectively as temperature increased. We propose that lower silicide temperature would be favorable in newly proposed NiCo salicide in order to lessen the agglomeration causing the leakage and scum formation.