• Journal of Magnetics
• /
• 제9권4호
• /
• pp.97-100
• /
• 2004

In the present work exchange coupling between ultrathin Fe ($8{\AA}$) and Tb ($12{\AA}$) layers separated by Au spacer of varied thickness ($3-20{\AA}$) was studied. Anomalous Hall effect measurements showed weakly damped oscillating dependence of the Hall conductivity as a function of Au spacer thickness. Disagreement of the observed damping with the RKKY model of interlayer exchange coupling was explained by the influence of external magnetic field on the behaviour of exchange coupling oscillations. It was confirmed by Hall-like effect measurements at zero applied magnetic field and also illustrated by corresponding estimations.

• Journal of Magnetics
• /
• 제4권3호
• /
• pp.92-97
• /
• 1999

A relationship between microstructure and ferromagnetic resonance of Co/Ag multilayers has been studied in as-deposited and annealed multilayers iwth ultrathin (dCo < 1 nm) Co layers. Depending on the nominal thickness of Co Co/Ag multilayers represent a system of fine magnetic particles (dCo < 0.4 nm) or discontionuous layered structure (dCo/0.5 nm). FMR data has been interpreted in the framework of a odel of interacting fine particles exhibiting superparamagnetic behavior. Changes in the FMR spectra upon annealing have been attributed to the growth of the Co particles and to a transition from the fcc to hcp atomic structure of the highly (111) textured Co particles.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권6호
• /
• pp.795-805
• /
• 1995

A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular-level control over thickness and multilayer architecture. This new self-assembly process opens up vast possibilities in applications which require large area, ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 춘계학술대회 논문집
• /
• pp.143-144
• /
• 2015

Here we report the Ar-ion milling rates of ultrathin Si and GaAs single crystals. The thickness change is measured using convergent beam electron diffraction (CBED) technique with the help of Bloch wave simulation method. This study suggests the experimental procedures to determine the references for an etching rate to reduce a sample thickness or to remove the damaged sample surface using Ar-ion source.

• Journal of Korean Vacuum Science & Technology
• /
• 제6권1호
• /
• pp.5-7
• /
• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

• 한국자기학회지
• /
• 제8권5호
• /
• pp.255-260
• /
• 1998

두께 10$\mu\textrm{m}$ 이하의 코발트계 극박형 비정질합금의 진공중 용탕급냉방법에 의한 제조조건과 자기적 특성에 대해 연구되었다. 구리 냉각롤의 회전 선속도를 55 m/s로 하였을 때, 0.05 kgf/cm2 이하의 용탕분사압 조건에서 극박형 리본이 얻어졌다. 합금 두께는 용탕분사 가스압력의 감소에 비례하여 직선적으로 감소하였으며, 이와 동시에 폭의 감소도 함께 일어났다. 이는 극박형 합금을 만들기 위해 용탕분사압을 극단적으로 감소시키면 노즐구의 양단부에서 용융금속과 노즐 사이의 마찰효과가 크게 나타나 유효분사압이 현저히 감소하는 데에 기인하는 것으로 해석되었다. 저주파(1 kHz) 실효투자율은 대략 2차 함수의 관계로 리본 두께의 감소에 따라 저하되었다. 반면 보자력은 두께의 감소에 반비례하여 증가하였는데, 이들 현상은 거의 전적으로 표면효과의 증대에 의한 자벽이동의 억제에 그 원인이 있는 것으로 판단되었다. 그러나 고주파(1 MHz) 실효투자율은 두께의 감소에 따라 증가하였는바 이는 와전류 발생이 억제되어 자기장 방향으로의 자화회전이 보다 용이해지기 때문으로 생각되었으며, 결과적으로 극박화에 의해 MHz 대역에서 우수한 저손실 성질을 나타내는 자심 특성의 실현이 가능하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.317.2-317.2
• /
• 2013

Ultrathin oxide encapsulated metal-oxide hybrid nanocatalysts have been fabricated by a soft chemical and facile route. First, SiO2 nanoparticles of 25~30 nm size have been synthesized by modified Stobber's method followed by amine functionalization. Metal nanoparticles (Ru, Rh, Pt) capped with polymer/citrate have been deposited on functionalized SiO2 and finally an ultrathin layer of TiO2 coated on surface which prevents sintering and provides high thermal stability while maximizing the metal-oxide interface for higher catalytic activity. TEM studies confirmed that 2.5 nm sized metal nanoparticles are well dispersed and distributed throughout the surface of 25 nm SiO2 nanoparticles with a 3-4 nm TiO2 ultrathin layer. The metal nanoparticles are still well exposed to outer surface, being enabled for surface characterization and catalytic activity. Even after calcination at $600^{\circ}C$, the structure and morphology of hybrid nanocatalysts remain intact confirm the high thermal stability. XPS spectra of hybrid nanocatalyst suggest the metallic states as well as their corresponding oxide states. The catalytic activity has been evaluated for high temperature CO oxidation reaction as well as photocatalytic H2 generation under solar simulation. The design of hybrid structure, high thermal stability, and better exposure of metal active sites are the key parameters for the high catalytic activity. The maximization of metal-TiO2 interface interaction has the great role in photocatalytic H2 production.

• The Korean Journal of Ceramics
• /
• 제1권1호
• /
• pp.7-12
• /
• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• 한국정밀공학회지
• /
• 제17권12호
• /
• pp.145-150
• /
• 2000

Micro punching is one of general methods to fabricate simple holes such as permanent ink-jet printer nozzles. A thin punch, that is need for micro punching, usually has been obtained by mechanical machining. There are some method to obtain a thin punch from a cylindrical rod, e.g., microgrinding and WEDG (Wire Electro-Discharge Grinding). Inefficiently, only one punch can be obtained from these machining methods. In contrast with these methods, many punches can be fabricated simultaneously by electrochemical process. Electrochemical process has usually aimed to obtain very sharp probe for atomic force microscopy (AFM) or scanning tunneling microscopy (STM), and it has not been considered the whole shape of a probe in spite of good merits. In this paper, an ultrathin punch with a tapered shape and a cylindrical tip is newly fabricated by electrochemical process.

• Journal of Advanced Marine Engineering and Technology
• /
• 제32권3호
• /
• pp.461-467
• /
• 2008

It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.