• Journal of information and communication convergence engineering
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• 제5권2호
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• pp.109-111
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• 2007

In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 1999년도 추계학술대회 논문집
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• pp.393-394
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• 1999

최근에 개발된 ultrathin window를 장착한 electron probe X-ray microanalysis(EPMA) 분석법(Ro et. el., 1999; Osan et. al., 1999; Szaloki et. al., 1999)은 종래의 통상적인 EPMA 방법으로는 분석하기 어려웠던 탄소, 질소, 산소 등의 원소를 정량적으로 분석할 수 있는 가능성을 제시하였다. 개개 입자의 형태와 크기 뿐 아니라 화학조성에 대한 정보를 제공하는 EPMA 분석법은 대기 중 개개 입자에 대한 생성, 이동, 반응 및 소멸에 관한 자세한 정보를 제공하기 때문에 지난 20여 년간 이 분석법을 사용하여 많은 연구가 진행되어 왔다.(중략)

• Journal of the Korean Physical Society
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• 제80권
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• pp.415-419
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• 2022

Ultrathin Pt less than 10 nm thick is widely used in spintronic devices including spin Hall current. The transport property and underlying physics however have not been much studied for ultrathin films. Classical theories are analyzed to find that they cannot be applied to ultrathin films. Quantum mechanical size effect theory was applied to analyze Pt and Pt/CoFeB film sets. The quantum mechanical theory explained the conductance variation for both films along with roughness remarkably well.

• 센서학회지
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• 제24권4호
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• 대한수의학회지
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• 제29권4호
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• pp.541-548
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• 1989

오제스키병 바이러스를 배양세포에다 감염시켜, 냉동 및 araldite포매 초박절편에서 protein A-gold labeling을 통해 바이러스항원 검출을 시도하였다. 오제스키병 바이러스항원은 10nm gold probes로 표지되었으며, 전자밀도가 높은 gold 입자들은 바이러스의 nucleocapsid와 envelope에서 주로 관찰되었고, 초냉동박절표본에서의 immunogold labeling은 조직구조물들과 극히 미미한 비특이결합만을 보였다. 초냉동박절표본에서의 immunogold labeling은 오제스키병 바이러스항원을 검출하는데 있어 효과적이었으며, 이는 또한 여러가지 바이러스들과 속주세포들간의 상호작용에 관한 면역세포화학적 연구에 크게 이용될 수 있을 것으로 생각된다.

• 대한화학회지
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• 제56권4호
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• pp.478-483
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• 2012

We successfully synthesized $Fe_3O_4/SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that was fine controlled by changing concentration of $Fe_3O_4$. Among various reaction conditions for silica coating, increasing concentration of $Fe_3O_4$ was more effective approach to decrease silica thickness compared to water-to-surfactant ratio control. Moreover, we found that concentration of the 1-octanol is also important factor to produce the homogeneous $Fe_3O_4/SiO_2$ nanoparticles. The present approach could be available to apply on preparation of other core/shell nanoparticles with ultrathin silica layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.294-299
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• 2003

We have investigated the structures of copper nanowires encapsulated in carbon nanotubes using a structural optimization process applied to the steepest descent method. The results showed that the stable morphology of the cylindrical ultrathin copper nanowires in carbon nanotubes is multishell packs consisted of coaxial cylindrical shells. As the diameter of copper nanotubes increased, the encapsulated copper nanowires have the face centered cubic structure as the bulk. Both the semiclassical orbits in a circle and the circular rolling of a triangular network can explain the structures of ultrathin multishell copper nanowires encapsulated in carbon nanotubes.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.5-8
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• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.