• Title/Summary/Keyword: Ultra-violet absorption Spectrum (UV)

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Measurements of the Benzene Absorption Cross Section in the Range of Ultra Violet (UV) (UV 영역에서 벤젠의 흡수 단면적의 측정)

  • Lee, J.S.;Ryu, S.Y.;Kim, H.H.;Woo, J.C.;Kim, K.B.
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.6
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    • pp.922-928
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    • 2006
  • An absolute absorption cross section of benzene was measured with a spectrometer system including a mono-chrometer and a grating in the wavelength region of $240{\sim}280nm$ under the atmospheric pressure and room temperature in the laboratory. A certificated reference benzene gas ($98{\mu}mol/mol$ in $N_2$) was used to measure its absorption cross section. A 710 mm cell with a quartz window and a 150 W Xe arc lamp were employed. The magnitude of absorption cross section of $1.41{\times}10^{-18}cm^2$ was lower than that of the reference spectra ($2.5{\times}10^{-18}cm^2$) of high resolution spectrometer, Total measurement uncertainty was estimated to be 4.0%.

Studies on Structure and Color of the White Antheraea pernyi, Silkworm Cocoon

  • Tao, Ji;Hongde, Liu
    • Natural Product Sciences
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    • v.1 no.1
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    • pp.66-69
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    • 1995
  • Traditional Antheraea pernyi silkworm cocoon is tawny color. The white Antheraea pernyi silkworm cocoons studied here by IR and UV are new breeds of recent breeding. We discovered that the main body of the first grade structure of silk protein in the new white is as same as the one in the traditional tawny Antheraea pernyi silkworm cocoon, yet there are small quantities of cross-linked polymer of gentisic acid and silk protein in the white silkworm cocoons. In spite of the least surviving quantity of the polymer, the white silkworm cocoons are most white and its white color is similar to white Bombyx mori silkworm cocoon.

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Physico-chemical Characteristics of the Inhibitory Substance on the Germination of Mung Bean (녹두 발아 조해물질(阻害物質)의 이화학적(理化學的) 성질(性質))

  • Kim, Kwang-Hyeon
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.14 no.1
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    • pp.57-60
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    • 1985
  • The inhibitory substance on the growth of mung bean seedling was amorphous crystal that had a single spot on silica gel thin layer chromatography under ultra-violet irradiation in dark room. The Rf value was 0.85 in n-butanol-acetic acid-formic acid-water(15 : 12 : 3 : 10) system, and 0.92 in n-butanol-acetic acid-water(4 : 1 : 5) system, respectively. Biochemical reaction of the inhibitor was negative to $FeCl_3$, pyrimidine, ninhydrine, folin, fehling, Salkowski and Ehrlich reaction, but the inhibitor had a blue fluorescence from irradiation of ultra-violet rays and had maximum absorption at 252nm on UV spectrum. On IR spectrum, the Peaks of the inhibitor appeared at $3300{\sim}3500,\;2900{\sim}3000,\;1600{\sim}1700,\;and\;1400cm^{(-1)}$. The strain tested was identified to be similar Streptomyces iuteogriseus by morphorogical and physiological characteristics.

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Sol-gel Derived-highly Transparent c-axis Oriented ZnO Thin Films (졸-겔법에 의한 c-축 배향성을 가진 고투과율 ZnO 박막의 제조)

  • Lee, Young-Hwan;Jeong, Ju-Hyun;Jeon, Young-Sun;Hwang, Kyu-Seog
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.1
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    • pp.71-76
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    • 2008
  • Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

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