• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• 한국세라믹학회지
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• 제40권12호
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• pp.1170-1176
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• 2003

진화최적방법을 이용하여 alkali earth borosilicate 계열(Eu, Mg, Ca, Sr, Ba)$_{x}$ $B_{y}$S $i_{z}$ $O_{d}$에 E $u^{3+}$ 를 도핑 하여 고효율 적색 형광체를 합성하였다. 본 연구는 삼원색 백색 LED로의 적용을 목적으로 한다. 진화최적방법은 유전알고리즘과 조합화학을 연계하여, LED형광체 개발을 위해 개발하였다. 유전알고리즘을 조합화학에 접목함으로써 시간과 자원의 낭비 없이 매우 효율적인 형광체 탐색을 꾀할 수 있었다. 실질적인 실험에 앞서 다양한 목적함수를 이용하여 시뮬레이션을 실시하여 본 연구의 타당성을 증명하고 실제 합성한 결과 삼원색 백색 LED용 적색형광체(E $u_{0.14}$M $g_{0.18}$C $a_{0.07}$B $a_{0.12}$ $B_{0.17}$S $i_{0.32}$ $O_{{\delta}}$)를 얻었다.얻었다.다.얻었다.얻었다.다.