• 한국정밀공학회지
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• 제29권9호
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• pp.931-937
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• 2012

In this study, we assessed environmental impacts of compound humidifiers using environmental life cycle assessment and presented the ways to improvements in energy consumption of them. We found eco-design parameters and $CO_2$-eq emissions in each stage of raw material acquisition, manufacturing, transportation, use and disuse in life cycle of the compound humidifiers. The highest $CO_2$ emission is found to be in the stage of use among all stages of life cycle, which is mainly due to power consumption in thermal heating of heating coil for sterilization during humidification. The power consumption and $CO_2$ emission in the stage of use can be reduced to 1/4 and 1/3 at the highest estimate through improvement of sterilization method, respectively. We suggested the replacement of conventional thermal heating coil by ultra violet light-emitting diodes (UV-LED) for sterilization and then presented the experimental results on the sterilization effects of UV-LEDs.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.758-763
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• 2006

We has been studied the thin film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation properties of the passivation layer materials, we have carried out the fabrication of green light emitting diodes with ultra violet(UV) light absorbing polymer resin, $SiO_2,\;and\;SiN_x$, respectively. From the measurement results of shrinkage properties according to the exposure time to the atmosphere, we found that $SiN_x$ thin film is the best material for passivation layer. We have investigated the emission efficiency and life time of OLED device using the package structure of $OLED/SiN_x/polymer$ resin/Al/polymer resin. The emission efficiency of this OLED device was 13 lm/W and life time was about 2,000 hours, which reach 95 % of the performance for the OLED encapsulated with metal.

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.442-449
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) films grown by a box cathode sputtering (BCS) were investigated as a function of oxygen flow ratio. A sheet resistance of $42.6{\Omega}/{\Box}$, average transmittance above 88% in visible range, and root mean spare roughness of $2.7{\AA}$ were obtained even in the IZO layers grown at room temperature. In addition, it is shown that electrical characteristics of the top-emitting organic light emitting diodes (TOLEDs) with the BCS grown-IZO top cathode layer is better than that of TOLEDs with DC sputter grown IZO top cathode, due to absence of plasma damage effect. Furthermore the effects of oxygen flow ratio in IZO films are investigated, based on x-ray photoelectron spectroscopy (XPS), ultra violet/visible (UV/VIS) spectro-meter, scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis results.

• Journal of Electrical Engineering and Technology
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• 제8권5호
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• pp.1169-1174
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• 2013

The objective of this work was to increase the efficiency of ultraviolet-light emitting diodes at 375 nm for sterilization. Since $TiO_2$ had antibacterial properties, which were attributed to the appearance of hydroxyl radicals and superoxide radical anions on the surface species under ultra violet radiation at about 387 nm, photo-reactive layers such as Ag-doped $TiO_2$ were coated on aluminum substrates by electrostatic spraying. Crystallinity and surface morphology of the coating layer were examined by X-ray diffraction ${\theta}-2{\theta}$ scan and field emission-scanning electron microscope, respectively. In an antibacterial test, we observed above 99% reduction of Escherichia coli populations on 3 or 5 mol% Ag-doped $TiO_2$ layers after irradiation for 2 hrs at 375 nm, while very low inactivation on bare aluminum substrates occurred after irradiation as the same condition.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• 공업화학
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• 제34권1호
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• pp.94-97
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• 2023

BTPSF와 BDTSF는 유기발광다이오드용 스파이로플루오렌 모이어티를 기반으로 하는 새로운 청색 발광 물질로 성공적으로 합성되었다. BTPSF와 BDTSF는 촉매를 사용하지 않고 Diels-Alder 반응을 통해 합성하여 고순도를 얻었다. 합성된 물질의 광발광 스펙트럼은 용액 상태에서 약 381, 407 nm, 필름 상태에서 각각 395, 434 nm의 최대 발광 파장을 나타내어 자외선과 짙은 청색 발광색을 나타냈다. 합성된 BDTSF 물질은 non-doped 소자의 EML로 적용되었으며, 전류 효율은 0.61 cd/A이다.

• 농업생명과학연구
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• 제50권5호
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• pp.1-9
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• 2016

Plant growth and development strongly influenced by light quantity and its spectral composition. Young tomato plants were cultivated in growth cabinets under artificial light provided by red and blue light emitting diodes(LEDs) during 12 hours, then plants were exposed to monochromatic ultraviolet, blue, green and red lights as an end-of-day(EOD) treatment during 4 hours to study their effect on plant growth parameters. EOD lighting from various LEDs increased total fresh and dry weights as well as assimilation area compared to those in control. Blue light increased stem height, internode length and stem diameter. Monochromatic UV-A light reduced stem elongation, highly increased stomatal conductance. Compactness and health index of young tomato plants were increased in UV-A and red light treatments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.331-331
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• 2014

3족 질화물에 기반한 발광다이오드는 비소화물이나 인화물에 비해 여러 가지 장점을 가져 각광받아왔다. 특히, (Al)GaN 에 기반한 자외선 영역 발광 다이오드는 자외선 경화, 소독 등의 여러 가지 응용 가능성을 가진다 [1]. 하지만, 심자외선 영역으로 갈수록 높은 접촉 저항과 투명전극에서의 광흡수에 의해 전류주입 효율과 광추출 효율이 감소하여 결국 외부양자 효율이 더욱 열화되는 특성을 보인다. 이는 넓은 밴드갭을 가지는 물질을 이용하여 p-(Al)GaN 층에서 오믹접촉을 이루어야만 해결이 가능하지만 아직까지 이러한 결과가 보고된 바 없다. 본 연구에서는, 우리는 넓은 밴드갭을 가지는 silicon dioxide (SiO2) 에 전기장을 인가하여 p-GaN, and p-AlGaN 층에 전도성 필라멘트를 형성하여 전기전도도를 부여하는 연구를 진행하였다. p-GaN 과 p-AlGaN 위에서 5 nm 두께의 SiO2는 schottky 한 특성과 280 nm의 파장대역에서 약 97%의 투과율을 보였다. 비록 schottky 장벽이 형성되었지만, 전기전도도가 크게 향상되었으며 심자외선 영역에서 매우 낮은 흡수율을 보였다. 이는 기존의 증착후 열처리를 거쳐 제조된 전극에 비하여 우수한 특성을 지니며 향후 심자외선 영역 발광다이오드의 p-(Al)GaN 층 위에 오믹접촉을 이룰수 있는 가능성을 제시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

• 대한전자공학회논문지SD
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• 제49권5호
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• pp.10-15
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• 2012

본 논문에서는 고효율 고출력 DUV(Deep Ultra Violet)-LED(Light Emitting Diodes)의 구현을 위하여 n-side에서 p-side로 well 두께를 다르게 형성하는 비대칭 MQW 에피구조를 제안하였다. 제안된 구조의 물리적 해석을 위해 상용화된 3차원 시뮬레이터 SimuLEDTM을 이용하여 소자의 전기적/광학적 특성을 비교 분석 하였다. 시뮬레이션 결과, 본 연구에서 제안한 B구조(n-side에서 p-side 방향으로 well 두께를 2 nm, 3 nm, 4 nm 로 제작)의 에피층을 가지는 UV-LED는 기본 MQW 에피구조를 가지는 UV-LED와 동작전압은 8.9 V로 동일한 값을 가졌지만 광출력은 기본구조의 10.6 mW 에 비해 약 1.17배 향상된 12.4 mW의 값을 가지는 것을 확인하였다.