• Title/Summary/Keyword: Ultra-sensitive

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Industrial IoT Standardization Trend of the 5G Mobile Network (5G 모바일 네트워크의 Industrial IoT 표준기술 동향)

  • Kim, K.S.;Kang, Y.H.;Kim, C.K.
    • Electronics and Telecommunications Trends
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    • v.36 no.6
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    • pp.13-24
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    • 2021
  • Industrial networks has been developing various technologies from fieldbus technology to industrial Ethernet and time-sensitive networking. The industry expects that the 5G mobile network will solve the diverse and highly specific industrial site requirements. Accordingly, 3GPP has been developing standard functions to provide ultra-high reliability, ultra-high speed, ultra-connection, and ultra-low latency services, and 3GPP Rel-16 began developing ultra-low latency and ultra-high reliability communication functions for 5G mobile networks to support vertical industries. In this paper, we show the related standardization trends and requirements to apply industrial IoT service scenarios to 5G mobile networks, and in particular, we introduce 5G system features and extended 5G system architecture to provide time sensitive communication and time synchronization services.

Series Voltage Compensation Systems for Voltage Sag by Using an Environmentally Friendly Ultra-capacitor (친환경 Ultra-capacitor에 의한 순시전압강하의 직렬전압보상 시스템)

  • Shon, Jin-Geun;Jeon, Hee-Jong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.4
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    • pp.763-769
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    • 2009
  • A series voltage compensation(SVC) system is a power-electronics controller that can protect sensitive loads from disturbance in the supply system. Especially, voltage sags are considered the dominant disturbances affecting the power quality. This paper dealt with a system of off-line type voltage sag compensation by using a bi-directional DC/DC converter of environmentally friendly ultra-capacitor. This capacitor is attached to the DC link of SVC through the high-efficiency DC/DC converter in order to compensate the DC link voltage drop during short-term power interruption as voltage sags. Therefore, in this paper, a DC/DC converter to control high-efficiency energy of ultra-capacitor and voltage sag detection algorithm of off-line type SVC systems are newly introduced. According to the results of experimental of prototype system, it is verified that the proposed system has effectiveness of voltage sag compensation using an ultra-capacitor.

Ultra-sensitive, Spider Inspired Sensor and Artificial Intelligence Analysis for Recording of Wrist Load and Warning System (거미 모사 초고감도 센서와 인공지능을 활용한 작업자 손목 부하 측정 및 경고 시스템)

  • Kim, Nahyeong;Shin, Chaerim;Ha, Jeongseok;Choi, Yong Whan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2021.05a
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    • pp.421-422
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    • 2021
  • In this paper, we develop an ultra-sensitive sensor and signal analysis system to measure the load on the wrist. The ultra-sensitive sensor inspired by the organs of a spider is manufactured and the measured signal attached to the wrist is analyzed using FFT (Fast Fourier Transform) and a fuzzy system.

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The Assessment of Ultrasensitive HBsAg kit's Sensitivity level and Performance in Detection of Mutant Forms (Ultra-sensitive HBsAg IRMA 키트의 민감도 및 변이형 검출능 평가)

  • Ha, Dong-Hyuk;Min, Kyung-Sun;Noh, Gyeong-Woon;Kim, Hyun-Ju
    • The Korean Journal of Nuclear Medicine Technology
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    • v.15 no.1
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    • pp.121-125
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    • 2011
  • Purpose: The DNA-type virus HBV, discovered by D. Dane and others in 1976, is approximately 42nm big and known as the main cause of liver-related diseases around the world. HBsAg has 4 kinds of subtypes including adw, adr, ayw and ayr and besides common antigen factor a, there are d, y, r, w. From the methods of serologically testing HBV, IRMA, EIA and CLIa were developed for testing HBsAg and are being used in examining the surface antigen of HBV. In this study, among the methods for testing HBV, the recently developed RIAKEY Ultrasensitive HBsAg IRMA kit's sensitivity level and performance in detection of mutant forms were measured and compared with CLIA. Materials and methods: Two certified reference materials, which are WHO 1st International Standard 1985(80/549) and WHO 2nd International Standard 2003(00/588. subtype adw2, genotypeA), were used in the examination and the sensitivity level was measured by diluting these materials from 0.08 IU/ml to 0.005 IU/ml. The materials for examining the detection of mutant forms included 9 kinds of subtype 'ad' and one kind of subtype 'ay' purchased from DSI company. Also, with the use of positive and negative samples, they was compared with CLIA. Result: Ultrasensitive HBsAg kit based on IRMA method showed the detection of up to 0.01 IU/ml not only for WHO 1st International Standard 1985(80/549) but also for WHO 2nd International Standard 2003(00/588. subtype adw2, genotypeA) and the sensitivity level was measured as 0.01 IU/ml by WHO standard. In testing the performance for detection of mutant forms, the 9 kinds of subtype 'ad' and one kind of subtype 'ay' mutant materials were detected, demonstrating the capacity of detecting various types of mutant forms. Conclusions: With the clinical importance of sensitivity level and performance in detection of mutant forms increasing in the field of HBsAg diagnosis, the examination of IRMA's effectiveness using RIA method in the aspects of the sensitivity level and performance in detection of mutant forms was carried out and its result is as follows. The sensitivity level was measured as 0.01 IU/ml by WHO standard and it was possible to measure various types of mutant forms with high sensitivity. Thus it is suggested that more speedy and accurate reports could be produced from a nuclear medicine laboratory for clinical practitioners requiring results of various situations.

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Research Trend in Ultra-Low Latency Networking for Fourth Industrial Revolution (제4차 산업혁명 시대를 위한 초저지연 네트워킹 기술 동향)

  • Kang, T.K.;Kang, Y.H.;Ryoo, Y.C.;Cheung, T.S.
    • Electronics and Telecommunications Trends
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    • v.34 no.6
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    • pp.108-122
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    • 2019
  • Ultra-low latency networking is a technology that reduces the end-to-end latency related to transport time-sensitive or mission-critical traffic in a network. As the proliferation of the fourth industrial revolution and 5G mobile communications continues, ultra-low latency networking is emerging as an essential technology for supporting various network applications (such as industrial control, tele-surgery, and unmanned vehicles). In this report, we introduce the ultra-low-latency networking technologies that are in progress, categorized by application area, and examine their up-to-date standard status.

Ultra-Low-Power Differential ISFET/REFET Readout Circuit

  • Thanachayanont, Apinunt;Sirimasakul, Silar
    • ETRI Journal
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    • v.31 no.2
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    • pp.243-245
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    • 2009
  • A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

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Sensitive Product Design of Ultra High Performance Concrete (UHPC) (감성 콘크리트 블루투스 스피커 (콩스) 제품 디자인)

  • Kim, Kyuong-Hwan;Kim, Byoung-Il
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2020.06a
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    • pp.197-198
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    • 2020
  • A study was conducted on UHPC production using the silicone mold method. UHPC (Ultra-High-Performance Concrete) has the advantage of being able to shape the product in a free-form shape on concrete, but when mass-producing products in one design, such as electronic products, rather than one-time products such as buildings and decorations Demolition is difficult with wood and mold. This study uses silicone molds, UHPC mix to ensure fluidity, self-integrating performance and mechanical performance Prototyping was done proportionally.

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Super Coupling Dual-gate Ion-Sensitive Field-Effect Transistors

  • Jang, Hyun-June;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.239-239
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    • 2013
  • For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

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Fabrication of Nb SQUID on an Ultra-sensitive Cantilever (Nb SQUID가 탑재된 초고감도 캔티레버 제작)

  • Kim, Yun-Won;Lee, Soon-Gul;Choi, Jae-Hyuk
    • Progress in Superconductivity
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    • v.11 no.1
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    • pp.36-41
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    • 2009
  • Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

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