• Title/Summary/Keyword: Ultra-low temperature

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3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Kim, Yong-Hae;Chung, Choong-Heui;Moon, Jae-Hyun;Lee, Su-Jae;Kim, Gi-Heon;Song, Yoon-Ho
    • ETRI Journal
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    • v.30 no.2
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    • pp.308-314
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    • 2008
  • In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.

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Superplastic Deformation Behavior of ECA dressed 7010 Al Alloy (ECAP가공된 7010 Al 합금의 초소성 변형 특성)

  • 김지식
    • Transactions of Materials Processing
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    • v.11 no.3
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    • pp.255-261
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    • 2002
  • The grain size of 7010 Al alloy was refined to submicrometer level by using equal channel angular pressing (ECAP) and additional warm rolling. The mechanisms of grain refinement in ECAP process were fragmentation of coarse grain to ultra fine subgrains after a few passes and continuous recrystallization of the subgrains with the increase o( passes. Because of ultrafine grain size, essentially low temperature and high strain rate superplasticity was observed after ECAP process and warm rolling to form a sheet metal. The maximum elongation of 700% was obtained for an ECA pressed specimen after IS passes without warm rolling at $450^{\circ}C$ with strain rate of 5x$10^{-3}$/sec.

3.5 inch QCIF AMOLED Panel with Ultra Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Kim, Yong-Hae;Chung, Choong-Heui;Moon, Jae-Hyun;Park, Dong-Jin;Lee, Su-Jae;Kim, Gi-Heon;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.717-720
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    • 2007
  • We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

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An Experimental Study on Developing Ultra-High Strength Powder Concrete Using Low-heat Portland Cement (저열 포틀랜드 시멘트를 사용한 초고강도 분체 콘크리트 개발에 관한 실험적 연구)

  • Jo, Byung-Wan;Yoon, Kwang-Won;Kim, Heoun;Park, Jin-Mo
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.13 no.6 s.58
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    • pp.135-147
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    • 2009
  • In order to develop the ultra high strength concrete over 400Mpa at 28 day, Low-heat portland cement, ferro-silicon, silica-fume and steel fiber were mixed and tested under the special autoclave curing conditions. Considering the influence of Ultra high strength concrete. normal concrete is used as a comparison with low water-cement ratio possible Low-heat portland cement. Additionally, as a substitution of aggregates, we analyzed the compressive strength of Ferro Silicon by making the states of mixed and curing conditions differently. In addition, SEM films testified the development of C-S-H hydrates of Type III & Type IV, and tobermolite, zonolite due to the high temperature, high pressure of autoclave curing. Fineness of aggregate, filler and reactive materials in concrete caused 420Mpa compressive strength at 28day successfully.

Thermal treatment dependences of MFS devices in $BaMgF_4$ thin films on silicon structures ($BaMgF_4$ 박막을 이용한 MFS 디바이스의 열처리 의존성)

  • 김채규;정순원;이상우;김광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.59-62
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    • 1998
  • Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

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Enhancement of Lowsintering Temperature and Electromagnetic Properties of (NiCuZn)-Ferrites for Multilayer Chip Inductor by Using Ultra-fine Powders (초미세 분말합성에 의한 칩인덕터용 (NiCuZn)-Ferrites의 저온소결 및 전자기적 특성 향상)

  • 허은광;강영조;김정식
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.47-53
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    • 2002
  • In this study, two different (NiCuZn)-ferrite which were fabricated by using ultra-fine powders synthesized by the wet processing and conventionally commercialized powder, were investigated and compared each other in terms of the low temperature sintering and electromagnetic properties. Composition of x and w in $(Ni_{0.4-x}Cu_xZn_{0.6})_{1+w}(Fe_2O_4)_{1-w}$ were controlled as 0.2 and 0.03, respectively. The sintering temperature were $900^{\circ}C$ for ultra-fine powders by way of initial heat treatment and $1150^{\circ}C$ for commercialized powders. The (NiCuZn)-ferrite by ultra-fine powders showed love. sintering temperature than that of commercialized powders by over $200^{\circ}C$, and excellent electromagnetic properties such as the quality factor which is a important factor in the multi-layered chip inductor. In addition, characteristics of B-H hysteresis, crystallinity, microstructure and powder morphology were analyzed by a vibrating sample method(VSM), x-ray diffractometer(XRD), transmission electron microscope (TEM) and scanning electron microscope(SEM).

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The Effect of Cetane Number on Exhaust Emissions in Low-temperature Diesel Combustion (저온 디젤 연소에서 세탄가가 배기가스 특성에 미치는 영향)

  • Han, Man-Bae
    • Transactions of the Korean Society of Automotive Engineers
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    • v.19 no.6
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    • pp.17-22
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    • 2011
  • This study is to investigate the effect of the cetane number in ultra low sulfur diesel fuel on combustion characteristics and exhaust emissions at 1500 rpm and 2.6bar BMEP in low-temperature diesel combustion with 1.9L common rail direct injection diesel engine. Low-temperature diesel combustion was achieved by adopting external high EGR rate with the strategic injection control without modification of engine components. Test fuels are ultra low sulfur diesel fuel (sulfur less than 12 ppm) with two cetane numbers (CN), i.e., CN30 and CN55. For the CN30 fuel, as a start of injection (SOI) timing is retarded, the duration of an ignition delay was decreased while still longer than $20^{\circ}CA$ for all the SOI timings. In the meanwhile, the CN55 fuel showed that an ignition delay was monotonically extended as an SOI timing is retarded but much shorter than that of the CN30 fuel. The duration of combustion for both fuels was increased as an SOI timing is retarded. For the SOI timing for the minimum BSFC, the CN30 produced nearly zero PM much less than the CN55, while keeping the level of NOx and the fuel consumption similar to the CN55 fuel. However, the CN30 produced more THC and CO than the CN55 fuel, which may come from the longer ignition delay of CN30 to make fuel and air over-mixed.

The Effect of T90 Temperature on Exhaust Emissions in Low-temperature Diesel Combustion (저온 디젤 연소에서 T90 온도가 배기가스에 미치는 영향)

  • Han, Man-Bae
    • Transactions of the Korean Society of Automotive Engineers
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    • v.19 no.4
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    • pp.72-77
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    • 2011
  • This study is to investigate the effect of the distillation temperature in ultra low sulfur diesel fuel on exhaust emissions in the low-temperature diesel combustion with 1.9L common rail direct injection diesel engine. Low temperature diesel combustion was achieved by adopting an external high EGR rate with a strategic injection control. The engine was operated at 1500 rpm 2.6 bar BMEP. The 90% distillation recovery temperature (T90) was $270^{\circ}C$ and $340^{\circ}C$ for the respective cetane number (CN) 30 and 55. It was found that there exists no distinctive discrepancy on exhaust emissions with regards to the different T90s. The high CN (CN55) fuels follow the similar trend of exhaust emissions as observed in CN30 fuels' except that high T90 fuel (CN55-T340) produced higher PM compared to low T90 fuel (CN55-T270). This may come from that high T90 plays an active role in aggravating the degree of fuel-air mixture preparedness before ignition.

Densification and Properties of ZrB2-based Ceramics for Ultra-high Temperature Applications (초고온용 ZrB2-계 세라믹스의 치밀화와 물성)

  • Kim, Seong-Won;Kim, Hyung-Tae;Kim, Kyung-Ja;Seo, Won-Seon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.3
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    • pp.273-278
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    • 2012
  • $ZrB_2$ has a melting temperature of $3245^{\circ}C$ and a low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultra-high temperature over $2000^{\circ}C$. Beside these properties, $ZrB_2$ has excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. This paper reviewed briefly 2 research examples, which are related to densification and properties of $ZrB_2$-based ceramics for ultra-high temperature applications. In the first section, the effect of $B_4C$ addition on the densification and properties of $ZrB_2$-based ceramics is shown. $ZrB_2$-20 vol.% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. With sintered bodies, densification behavior and hightemperature (up to $1400^{\circ}C$) properties such as bending strength and hardness are examined. In the second section, the effect of the SiC size on the microstructures and physical properties is shown. $ZrB_2$-SiC ceramics are fabricated by using various SiC sources in order to investigate the grain-growth inhibition and the mechanical/thermal properties of $ZrB_2$-SiC.