• 제목/요약/키워드: Ultra high vacuum (UHV)

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초고진공 분자선 에피성장 시스템의 제작과 에피성장된 ZnSe/GaAs(001)의 광학특성 (Construction of an Ultra High Vacuum Molecular Beam Epitaxy System and Optical Property of ZnSe/GaAs(001) Epitaxial films)

  • 김은도;손영호;엄기석;조성진;황도원
    • 한국진공학회지
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    • 제15권5호
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    • pp.458-464
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    • 2006
  • 본 연구에서는 초고진공 (UHV; ultra high vacuum) 분자선 에피성장 (MBE; molecular beam epitaxy) 시스템의 제작과 성능연구가 성공적으로 이루어졌다. 초고진공 용 분자선 에피성장 시스템을 국산화개발 및 제작하여, 장비에 관한 성능 테스트를 하게 되었다. 본 장비의 진공도가 $2X10^{10}$ Torr에 도달함을 확인하였고, 시편 가열모듈(substrate heating module)이 $1,100^{\circ}C$까지 가열됨을 확인할 수 있었으며, ZnSe/GaAs(001)의 증착특성을 SEM (scanning electron microscope), AFM (atomic force microscope), XRD (x-ray diffraction), PL (photoluminescence) 등으로 조사하였다.

분자선 에피성장법으로 성장된 ZnSe/GaAs의 특성 (Property of molecular beam epitaxy-grown ZnSe/GaAs)

  • 김은도;손영호;조성진;황도원
    • 한국결정성장학회지
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    • 제17권2호
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    • pp.52-56
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    • 2007
  • 본 연구에서는 초고진공(UHV, ultra high vacuum) 분자선 에피성장(MBE, molecular beam epitaxy) 시스템을 제작하여, ZnSe/GaAs[001]을 증착하였고, 증착된 박막의 특성을 SEM(scanning electron microscopy), AFM(atomic force microscopy)으로 조사하여, 분자층 단위의 조밀하고 균일한 표면특성을 보이고 있음을 확인할 수 있었다 XRD(x-ray diffractometer)를 이용하여, GaAs[001]기판의 XRD peak 위치와 ZnSe 박막의 XRD peak 위치가 각자 일치함을 확인할 수 있었다. PL(photoluminescence)로는 대략 437nm에서 발광하는 것이 관측되었으며, 2인치 ZnSe 박막의 PL mapping을 측정하였다.

UHV STM을 이용한 유기 초박막의 전기적 특성 연구 (Electrical Characteristics of Self-Assembled Organic Thin Films Using Ultra-High Vacuum Scanning Tunneling Microscopy)

  • 김승언;신훈규;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.108-111
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    • 2003
  • Currently, molecular devices are reported utilizing active self-assembled monolayers containing the nitro group as the active component, which has active redox centers[1]. We confirm the electrical properties of 4,4-di(ethynylphenyl)-2'-nitro-1-benzenethiolate. To deposit the SAM layer onto gold electrode, we transfer the prefabricated Au(111) substrates into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured current-voltage curve using ultra high vacuum scanning tunneling microscopy (UHV STM), I-V curve also clearly shows several current peaks between the negative bias region (-0.3958V) and the positive bias region (0.4658V), respectively.

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UHV-LCVD 장치를 이용한 박막제작에 관한 연구 (I) - 장치 제작을 중심으로 - (The Study on Thin Film Fabrication using UHV-LCVD System (I))

  • 최원국;윤덕주;공병인;김창현;황정남;정광호
    • 한국진공학회지
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    • 제2권2호
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    • pp.255-260
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    • 1993
  • $Si_3N_4$$SiO_2$ 박막을 고순도로 생장시키기 위하여 UHV-LCVD 장치를 제작하였다. 이 장치는 CVD 반응실, 시료주입 장치, 가스주입 장치, 광여기를 위한 레이저 창, 질량분석 장치로 구성되어 있다. UHV-LCVD는 low pressure, low vacuum CVD에 비해 제작상의 어려움이 따르나 초고진공 분위깅에서 반응 가스의 양을 정확히 조절하여 고순도의 박막을 제잘할 수 있었다.

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Understanding Ion Pump Emissions : Classification, Source Identification and Elimination of Emissions from Ion Pumps

  • Wynohrad, Tony
    • Applied Science and Convergence Technology
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    • 제23권6호
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    • pp.340-344
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    • 2014
  • Ion pumps continue to be a staple in ultra-high vacuum (UHV) applications. Since their adoption as a primary UHV pump in the 1960's, it has been known that a variety of particles can emanate from within the ion pump and cause undesirable effects on current measurements and optics components. Historically the solution has been baffling and shielding which results in longer conductance paths to the ion pump. Those solutions can work, but require a larger pump and more vacuum plumbing to compensate for conductance losses. The first step was to fully understand the nature of the particles and their charges. Once those were characterized options for emissions reduction were evaluated. It was determined that an efficient design of shielding near the source of the particle generation site was the most cost effective solution. With a slight modification to the chamber of a small ion pump, internal shielding was developed that reduced the emissions by a factor of up to 1000 times.

이온펌프의 초고진공영역에서의 배기특성개선 (The Improvement in Pumping Characteristics of Sputter Ion Pumps in the Ultra High Vacuum(UHV) Region)

  • 김정선;여환욱;박종윤
    • 한국진공학회지
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    • 제3권4호
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    • pp.401-404
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    • 1994
  • 초고 진공영역에서 배기특성 개선을 위하여 재질 및 구조가 다른 세가지 형태의 60(l/s) 형이온 펌프를 제작하여 그 배기특성을 측정하였다. 그 결과 음극판에 Ta 선을 전기용접한 펌프와 양극 cell의 구조에 변화를 준 펌프의 배기속도가 상용으로 이용되고 있는 펌프에 비해 약 50% 이상 개선되었다.

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초고진공 Scanning Tunneling Microscope의 제작 (Construction of Ultra High Vacuum Scanning Tunneling Microscope)

  • 손은숙;홍영규;박찬
    • 한국진공학회지
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    • 제3권4호
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    • pp.377-381
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    • 1994
  • 초고진공(UHV) Scanning Tummeling Microscopy(STM)을 제작하였다. 8인치 프란지에 부착한 STM은 초고진공에서 시료의 통전가열이 가능하며 다른 표면 측정방법의 적용과시료처리가 용이하다. 외부로부터 초고진공을 깨지 않고 시료와 tip의 도입이 가능하며 tip을 가열할 수 있다. 완성된 장치로 Si(111)-7$\times$7 구조의 STM상을 얻었다.

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Nanomanipulation and Nanomanufacturing based on Ion Trapping and Scanning Probe Microscopy (SPM)

  • Kim, Dong-Whan;Tae, Won-Si;Yeong, Maeng-Hui;K. L. Ekinci
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.530-537
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    • 2004
  • Development of a versatile nanomanipulation tool is an overarching theme in nanotechnology. Such a tool will likely revolutionize the field given that it will enable fabrication and operation of a wealth of interesting nanodevices. This study seeks funding to create a novel nanomanipulation system with the ultimate goal of using this system for nanomanufacturing at the molecular level. The proposed design differs from existing approaches. It is based on a nanoscale ion trap integrated to a scanning prove microscope (SPM) tip. In this design, molecules to be assembled will be ionized and collected in the nanoscale ion trap all in an ultra high vacuum (UHV) environment. Once filled with the molecular ions, the nanoscale ion trap-SPM tip will be moved on a substrate surface using scanning probe microscopy techniques. The molecular ions will be placed at their precise locations on the surface. By virtue of the SPM, the devices that are being nanomanufactured will be imaged in real time as the molecular assembly process is carried out. In the later stages, automation of arrays of these nanomanipulators will be developed.

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Au(111) 기판 제작과 자기조립된 Viologen 분자의 tunneling current 특성 (Fabrication of Au(111) substrate and tunneling current characteristics of self-assembled Viologen molecule)

  • 이남석;최원석;;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.255-256
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    • 2006
  • The electrical properties of viologen ($VC_8SH$) were studied in terms of the tunneling current characteristics using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system($420^{\circ}C$). Self-assembled monolayers (SAMs) were prepared on Au(111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM/L solution of Octanethiol in ethanol for 24 h to form a monolayer. After through rinsing the sample, it was exposed to a 0.1 mM/L solution of $VC_8SH$ in ethanol for 30 min. We measurement of the morphology on the single viologen molecule. The current-voltage (I-V) properties were measured at arbitary configured points on the surface of the sample by using a STS.

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EUV Lithography를 위한 진공 기술 (Vacuum Technology for EUV Lithography)

  • 주장헌
    • 진공이야기
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    • 제1권3호
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    • pp.14-20
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    • 2014
  • Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured. As explained above, to make it happen, many other important technologies will have to be addressed. The vacuum technology is one of them and the engineers and experts are paying attention on vacuum technology including vacuum pumps. Especially high Vacuum(HV) and Ultra high vacuum(UHV) are not easy and not simple one. So the manpower who can understand vacuum technology with long experience in vacuum industry is important with basic study.