• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.229.1-229.1
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.165-165
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• 2012

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.583-591
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• 2021

Various compositions of CeO₂-Ce₃Si₂ (0, 10, 30, 50, and 100 wt%Ce₃Si₂) composites were fabricated using conventional sintering and spark plasma sintering. Lower relative density, enhanced interdiffusion of oxygen and silicon, and silicide agglomerations from the congruent melting of Ce₃Si₂ at 1390 ℃ were only observed from conventionally-sintered pellets. Thermal conductivity of spark plasma sintered CeO₂-Ce₃Si₂ composites was calculated from the measured thermal diffusivity, specific heat, and density, which exhibited dense (>90 %TD) and homogeneous microstructure. The composite with 50 wt%Ce₃Si₂ exhibited 55% higher thermal conductivity than CeO₂ at 500 ℃, and 81% higher at 1000 ℃.

• Journal of Korea Foundry Society
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• v.27 no.5
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• pp.212-216
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• 2007

과공정 Al-15wt.%Si 합금의 주단조 공정의 적용을 위해 주조 예비성형체를 제작하는 과정에서 P와 Sr을 첨가하여 과공정 Al-Si 합금의 응고과정에서 발생하는 초정 Si과 공정 Si의 미세화 개량처리를 행하였다. 미세화 조직의 변화에 따른 기계적성질 및 단조성을 조사하였으며, 미세화제로 첨가된 0.075wt.% Sr과 0.1wt.% P의 첨가에서 가장 효과적인 미세한 조직을 얻을 수 있었고, 인장강도와 연신율은 이들 첨가원가의 증가에 따라 향상되는 결과를 보였으나 일정 이상의 첨가에서는 더 이상의 향상은 없었다. 단조성 평가를 위한 열간가공 재현실험에서는 $450^{\circ}C$에서 약60N/mm2의 하중이 필요함을 알 수 있었다. 열간단조 및 열처리 후의 인장강도와 연신율은 보다 많은 향상을 가져왔으며, 이는 압축가공에 의한 주조 예비성형체 내부에 잔존하던 주조결함의 제어와 열처리에 의한 조직의 개량 및 균질화 효과에 의한 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.46.2-46.2
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• 2021

Presolar silicon carbide (SiC) grains form around in the envelopes of asymptotic giant branch (AGB) stars by satisfying C/O>1 which is an optimal condition for SiC grains to condense in the stellar outflows. Ruthenium (Ru) isotopes are locked into the SiC grains during the condensation of SiC grains. We investigate the isotopic compositions of Ru in the stellar winds by using the NuGrid data, which are obtained by nucleosynthesis calculations during the stellar evolution. We compare the isotopic compositions of Ru obtained from the NuGrid data with measurements and the predictions obtained from different codes. Our results present a piece of evidence that SiC grains in the presolar system came from low-mass and low-metallicity AGB stars, also confirming that they were not from massive stars. We also suggest a new scenario in which the total stellar yields are also considered because SiC grains can condense during the collapse of molecular clouds.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2759-2760
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• 2010

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.175-176
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• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.