• 전기전자학회논문지
• /
• 제17권3호
• /
• pp.221-228
• /
• 2013

About functional parameters of a LED/UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.

• Korean Chemical Engineering Research
• /
• 제53권6호
• /
• pp.755-761
• /
• 2015

광촉매의 VOC 제거 특성 평가에 관한 최근의 연구는 온도 변화가 거의 없는 상태에서 실시되었다. 온도 변화를 적게하기 위해 광량이 높은 UVLED를 챔버 위부에 배치하게 되면 광촉매와의 거리가 멀어져 그만큼 효율이 감소할 수 밖에 없으며 광촉매의 효율 향상을 위해서는 광원과 광촉매의 거리를 가까이 해야 할 필요가 있다. 본 연구에서는 UVLED 광원과 광촉매와의 거리를 가까이 두어 온도가 변하는 VOC 제거 시스템을 제작하였다. 광촉매로는 자외선 광원에서 반응하는 상용 $TiO_2$와 vanadium 이온을 도핑시킨 $TiO_2$를 사용하였으며 제작된 챔버를 이용하여 광촉매 효율을 평가하였다. VOC 제거 평가 시 테스트 전후 온도는 약 $20^{\circ}C$ 상승하여 UVLED 광원에 의해 변화된 온도로 VOC의 농도를 보정하여 온도에 따른 VOC 제거 효율 변화를 확인하였다. 보정 전후의 제거 효율을 비교하면 43~46%의 차이를 보였다. 챔버 내 온도 상승이 p-xylene의 농도 변화에 큰 영향을 주며 이를 보정하여 광촉매의 VOC 제거 효율을 평가할 필요가 있음을 확인할 수 있었다.

• 한국대기환경학회:학술대회논문집
• /
• 한국대기환경학회 2004년도 춘계학술대회 논문집
• /
• pp.243-244
• /
• 2004

• E2M - 전기 전자와 첨단 소재
• /
• 제29권3호
• /
• pp.15-23
• /
• 2016

• 전기전자학회논문지
• /
• 제19권1호
• /
• pp.80-86
• /
• 2015

There are many studies and products using a test paper impregnated with chemical solution can react with ozone. The color of a test paper can indicate the concentration of ozone. The purpose of this research is to design and manufacture a system using ultraviolet light source to measure the ozone density. This new technique is based on the characteristic of decomposition from ozone into oxygen under ultraviolet light. We used two sources of ultraviolet light including UV lamp and UVLED to determine the decomposition of ozone. This system is built with the electronic components, sensors and sealed pump tube to measure the ozone density in units of $g/cm^3$,ppm,ppb. In this paper,, we present some initial results of measuring the ozone density from ozone generator after completing inspection for safety.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.374.2-374.2
• /
• 2016

Volatile organic compounds (VOCs) in the atmosphere are harmful materials which influence indoor air environment and human health. Titanium dioxide ($TiO_2$) is photocatalyst extensively used in degradation of organic compound. To improve the photocatalytic activity in the visible light region, doping with non-metals element or loading noble metals on the surface of $TiO_2$ is generally proposed. In this study, N- doped $TiO_2$ having photocatalytic activity in visible light region was attached noble metal such as Pt, Ag, Pd, Au by coupling method. Catalytic activities of Noble metal coupled $N-TiO_2$ powders were evaluated by the improvement of their photocatalytic activities and the degradation of VOC gas. A UV-Vis spectrophotometer was used to measure the diffuse reflectance spectra of coupled $N-TiO_2$ sample. The photocatlytic activities of as prepared samples were characterized by the decoloration of aqueous MB solution under Xenon light source (UV and visible light). To measure of decomposition VOCs, ethylbenzene was selected for target VOC material and the concentration was monitored under UVLED irradiation in a closed chamber system. Adjusting the initial concentration of 10~12 ppm, to evaluate the removal characteristics by using the coupled $N-TiO_2$.

• 한국재료학회지
• /
• 제21권5호
• /
• pp.273-276
• /
• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.