• The Research Journal of the Costume Culture
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• v.11 no.6
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• pp.967-971
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• 2003

As the concerns over health increased in 1990's, research and development on the health material were also activated. The development of UV-cut textile became the hot issue, because the damage of W irradiation due to ozone depletion has become widely known. UV-cut effect is determined by the material, the color, the organization and the density of UV-cut fibers. UV-cut effect is very different according to the fibers. Polyester is known to have a better effect. Even in the same textile material, staple fiber has more effect than filament fiber. Different colors have different offsets. Although textiles have the same color, the effects can be different according to the depth of color. PET, PET/cotton blend, nylon and cotton fabrics were ultraviolet cutting finished with padding method using several absorbers. These UV-cut effect can be improved through the processing. Safety of UV-cut textile for the body must be considered future, Until now the figure of the UV-cut effects has been emphasized. There has been no experiment on the human body, although the textiles are directly on the human body. Futhermore there os no safety standard of UV-cut textiles. Therefore every effort will be made to set the standard UV-cut processing is established. The need of UV-cut products will be known to the consumers.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.285-291
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• 1991

A two-stage slit type virtual impactor based on the concept of the single stage virtual impactor has been designed, fabricated, and evaluated for the purpose of concentrating the suspended particles in the air with the size range of 1.8-4.5 .mu.m and handling large flow volume. Monodisperse methylene blue particles have been generated with vibrating orifice aerosol generator (VOAG). The separation efficiency and concentration efficiency have been measured by the UV-visible absorption spectrometry. Previous study for a single stage virtual impactor were used to determine the design parameters such as 50% cut-off sizes and dimensions of the two stage virtual impactor. The separation efficiency curve and 50% cut-off Stokes number(cut-off sizes) are not sensitive to the nozzle Reynolds number, but sensitive to the ratio between the minor flow rate and the total flow rate, The measured concentration efficiency was compared with the maximum concentration efficiency determined by the separation efficiencies of the first and the second stages. The differences between the measured and the maximum concentration efficiencies result from the wall loss due to the deposited particles on the internal walls inside the impactor.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Journal of Sensor Science and Technology
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• v.12 no.2
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.154-154
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• 2008

Although the screen printing technology using photosensitive carbon nanotube (CNT) paste has many advantages such as low cost, simple process, uniform emission, and capability of mass production, the CNT paste needs to be improved further in CNT dispersion, printability, adhesion, electrical conductivity, population of CNT emitters, etc. Ball milling has been frequently employed to prepare the CNT paste as ball milling can mix its ingredients very well and easily cut the long, entangled CNTs. This study carried out a parametric approach to fabricating the CNT paste in terms of low-energy ball milling and a paste composition. Field emission properties of the CNT paste was characterized with CNT dispersion and electrical conductivity which were measured by a UV-Vis spectrophotometer and a 4-point probe method, respectively. Main variables in formulating the CNT paste include a length of milling time, and amounts of CNTs and conductive inorganic fillers. In particular, we varied not only the contents of conductive fillers but also used two different sizes of filler particles of ${\mu}m$ and nm ranges. Among many variations of conductive fillers, the best field emission characteristics occurred at the 5 wt% fillers with the mixing ratio of 3:1 for ${\mu}m$-and nm-sizes. The amount and size of fillers has a great effect on the morphology, processing stability, and field emission characteristics of CNT emitter dots. The addition a small amount of nm-size fillers considerably improved the field emission characteristics of the photosensitive CNT paste.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.73-77
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• 2012

Co-(0.8 wt%) and Ce-(0.4 wt%) doped cubic zirconia ($ZrO_2$ : $Y_2O_3$ = 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1000^{\circ}C$ for 5 hrs. The orange, yellowish brown and brown colored as-grown single crystals were changed into either brownish red, yellow and green color after the heat treatment. Before and after the heat treatment, the YSZ (yttria-stabilized zirconia) single crystals were cut for wafer form (${\phi}6.5mm{\times}t2mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.