• 복식문화연구
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• 제11권6호
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• pp.967-971
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• 2003

As the concerns over health increased in 1990's, research and development on the health material were also activated. The development of UV-cut textile became the hot issue, because the damage of W irradiation due to ozone depletion has become widely known. UV-cut effect is determined by the material, the color, the organization and the density of UV-cut fibers. UV-cut effect is very different according to the fibers. Polyester is known to have a better effect. Even in the same textile material, staple fiber has more effect than filament fiber. Different colors have different offsets. Although textiles have the same color, the effects can be different according to the depth of color. PET, PET/cotton blend, nylon and cotton fabrics were ultraviolet cutting finished with padding method using several absorbers. These UV-cut effect can be improved through the processing. Safety of UV-cut textile for the body must be considered future, Until now the figure of the UV-cut effects has been emphasized. There has been no experiment on the human body, although the textiles are directly on the human body. Futhermore there os no safety standard of UV-cut textiles. Therefore every effort will be made to set the standard UV-cut processing is established. The need of UV-cut products will be known to the consumers.

• 대한기계학회논문집
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• 제15권1호
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• pp.285-291
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• 1991

본 연구에서는 800 1pm인 대유량을 처리하고 공기중 1.8~4.5$\mu\textrm{m}$ 입자를 효율 적으로 선별하여 농축시키는 슬릿형 2단 가상충돌기를 설계 제작하고 그 성능이 평가 되었다. 즉, 첫째단과 둘째단에서 4.5$\mu\textrm{m}$과 1.8$\mu\textrm{m}$이 각각 50%의 효율로 분리되도록 설계되었다. 즉, 첫째단과 둘째단에서 4.5$\mu\textrm{m}$과 1.8$\mu\textrm{m}$이 각각 50%의 효율로 분리되도 록 설계한다. 설계인자(design parameter)들을 결정하기 위하여 먼저 슬릿형 노즐의 1단 가상충돌기의 분리효율(separation efficiency)에 대한 실험을 통하여 50% 커트오 프 Stokes수를 구하고, 이를 기초로 하여 2단 가상 충돌기의 주요치수와 작동조건을 결정하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• 센서학회지
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• 제12권2호
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.486-493
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• 2003

유기금속 화학기상 증착법(MOCVD)을 이용하여 사파이어 기판에 AlGaN/n/sup ＋/-GaN 구조와 AlGaN/AlGaN interlayer/n/sup ＋/-GaN 구조로 성장시킨 AlGaN 층을 이용하여 쇼트키형 자외선 수광소자를 제작하였다. 성장층은 약 1018의 캐리어 농도와 각각 236과 269 ㎠/V·s의 이동도를 가진다. 메사구조를 형성하기 위해 ICP 장비로 식각한 후, Si₃N₄로 절연한 뒤 Ti/Al/Ni/Au와 Pt를 이용하여 저항성 전극 및 쇼트키전극을 형성하였다. 그리고 interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.67/N의 전기적 특성은 -5 V에서 1 ㎁의 낮은 누설전류를 보였고, interlayer가 없는 Pt/Al/sub 0.33/Ga/sub 0.67/N은 0.1㎂로 나타났다. 광측정 결과, interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.63/N 쇼트키 수광소자는 차단파장이 약 300 ㎚이며, 광응답도는 280 ㎚에서 0.15 A/W, 그리고 자외선 대 가시광선 제거비는 1.5×10⁴로 우수한 반응특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.154-154
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• 2008

Although the screen printing technology using photosensitive carbon nanotube (CNT) paste has many advantages such as low cost, simple process, uniform emission, and capability of mass production, the CNT paste needs to be improved further in CNT dispersion, printability, adhesion, electrical conductivity, population of CNT emitters, etc. Ball milling has been frequently employed to prepare the CNT paste as ball milling can mix its ingredients very well and easily cut the long, entangled CNTs. This study carried out a parametric approach to fabricating the CNT paste in terms of low-energy ball milling and a paste composition. Field emission properties of the CNT paste was characterized with CNT dispersion and electrical conductivity which were measured by a UV-Vis spectrophotometer and a 4-point probe method, respectively. Main variables in formulating the CNT paste include a length of milling time, and amounts of CNTs and conductive inorganic fillers. In particular, we varied not only the contents of conductive fillers but also used two different sizes of filler particles of ${\mu}m$ and nm ranges. Among many variations of conductive fillers, the best field emission characteristics occurred at the 5 wt% fillers with the mixing ratio of 3:1 for ${\mu}m$-and nm-sizes. The amount and size of fillers has a great effect on the morphology, processing stability, and field emission characteristics of CNT emitter dots. The addition a small amount of nm-size fillers considerably improved the field emission characteristics of the photosensitive CNT paste.

• 한국결정성장학회지
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• 제22권2호
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• pp.73-77
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• 2012

스컬용융법으로 큐빅지르코니아(YSZ) 단결정들($ZrO_2$: $Y_2O_3$= 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%, $Co_3O_4$: 0.8wt%, $CeO_2$: 0.4wt%)을 성장시켜 $N_2$ 분위기 $1000^{\circ}C$에서 5시간 동안 열처리 하였다. 오랜지색, 황갈색 또는 갈색의 단결정들은 각각 갈적색, 황색 또는 녹색으로 변화되었다. 열처리 전 후의 YSZ 단결정들은 직경 6.5, 두께 2 mm의 웨이퍼로 연마 하였다. 각 시편의 광학적 또는 구조적 특성은 UV-VIS 분광광도계와 XRD(X-ray diffraction)로 분석하였으며, $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ 또는 $^4T_1(^4P))$ 및 $Co^{3+}$에 의한 흡수, 이온화에너지 및 격자상수 변화를 확인하였다.