• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.32.1-32.1
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• 2011

Ultra thin tantalum nitride (TaNx) films with various thicknesses (10 nm to 40 nm) have been deposited by rf magnetron sputtering technique on glass substrates. The as deposited films were systematically characterized by several analytical techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR double beam spectrophotometer and four point probe method. From the XRD results, the as deposited films are in amorphous nature, irrespective of the film thicknesses. The films composition was changed greatly with increasing the film thickness. SEM micrographs exhibited the densely pack microstructure, and homogeneous surface covered by small size grains at lower thickness deposited films. The surface roughness of the films was linearly increases with increasing the films thickness, consequently the transmittance decreased. The absorption edge was shifted towards higher wavelength as the film thickness increases.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.125-127
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• 2016

TiO₂ quantum dots were synthesized by a hydrothermal method after precipitating titanium hydroxide using Ti(SO₄)₂ and NaOH solutions. A simple hydrothermal apparatus was manufactured in the laboratory and operated at temperature 100℃, 130℃, and 160℃. Spherical, uniform, and non-aggregated approximately 15 nm in size TiO₂ quantum dots were obtained. Properties of synthesized TiO₂ quantum dots were characterized using UV/Vis/NIR spectrophotometry, XRD diffractometry, and TEM.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.209-215
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• 2005

Titanium dioxide films $(TiO_2)$ doped cobalt transition metal were prepared on titanium metal by water spray pyrolysis technique. Micro-morphology, crystalline structure, chemical composition and binding state of sample groups were evaluated using field emission scanning microscope(FE-SEM), X-ray diffractometer(XRD), Raman spectrometer, X-ray photoelectron spectrometer(XPS). $TiO_2$ films of rutile structure were predominately formed on all sample groups and $Ti_2O_3$ oxide was coexisted on the surface of cobalt doped-sample groups. The optical absorption peaks measured by using UV-VIS-NIR spectrophotometer were observed at specific wavelength region in sample groups doped cobalt ion. This result could be analyzed by introducing crystal field theory.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2661-2665
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• 2011

We studied the effect of structural and morphological changes on the conductivity of a stretched conducting polymer film. To improve the poor processability of polyaniline, we used dodecylbenzenesulfonic acid as both a surfactant and a dopant during emulsion polymerization, followed by blending with high-impact polystyrene. UV-Vis/NIR spectra were obtained to observe conformational changes, and SEM and AFM were used to investigate morphological changes. FT-IR dichroism was applied to determine the microscopic orientation, and XRD patterns were obtained for quantitative crystallinity analysis. The electrical conductivity (${\sigma}_{\parallel}/{\sigma}_{\perp}$) was measured as a function of draw ratio. We found a clear correlation between morphological changes and (${\sigma}_{\parallel}/{\sigma}_{\perp}$), especially at the stretching limit. The conductivity of the films can be modified according to the desired application by controlling their structure and morphology.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.304-304
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• 2012

CIGS(CuInGaSe2) 태양전지의 후면전극(Back contact)으로 널리 사용되는 Mo 박막은 낮은 면저항, 높은 반사율, 광흡수층 Na-path 제공 등의 조건이 요구된다. 일반적으로 Mo 박막 제작은 DC 마그네트론 스퍼터링 방법이 가장 널리 사용되며, 제작조건에 따라 태양전지 효율에 강한 영향을 미치는 것으로 보고되고 있다. 본 연구에서는 DC 마그네트론 스퍼터링 시 기판에 이온빔(Ion-beam)을 동시 조사하는 이온 빔 스퍼터링 증착(Ion-beam sputter deposition)법으로 Mo 박막을 제작하였다. 제작된 박막의 전기적 및 광학적 특성은 4-point probe, UV-Vis-NIR spectrometer로 각각 조사하였으며 Na-path 제어를 위한 구조적 특성은 XRD, FE-SEM으로 분석하였다. 분석결과에 따르면 기존 DC 마그네트론 스퍼터링 방법보다 상대적으로 더 치밀한 구조와 높은 반사율을 가지는 박막이 제작됨을 알 수 있었다. Mo 박막의 최적조건은 DC power 300 W, Ion-gun power 50 W, Ar flow rate 20 sccm 였다.

• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.187-193
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• 2010

The colored films formed on 304 stainless steel plates by immersion treatment and electrochemical one in a solution containing sulphuric acids and chromic acids were studied by SEM, AES, and spectrophotometer. The thicknesses of the films by 20 minutes treatment were about 200 nm and it became thinner as the treatment times were increased. The surface texture showed a tortuous network of interlinking pathways. The color of the 304 steel surface changed from metallic white to gray, black, red, yellow-green, and green-blue, gradually, by the treatment time was increased. The reflectivity measured by UV-VIS-NIR spectrophotometer was reduced from max. 38% of basis metal to min. 3.5% of colored surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.346-349
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• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.